Abstract: A thermosetting resin composition for laser direct structuring (LDS) which is used for LDS includes the following components: (A) a thermosetting resin; (B) an inorganic filler; (C) a non-conductive metal compound that forms a metal nucleus upon irradiation with active energy rays; and (D) a coupling agent, in which the component (A) contains one or more selected from the group consisting of an epoxy resin and a bismaleimide resin, and at least one of the following conditions is satisfied. Condition 1: a ratio of particles having a particle size equal to or more than 1 ?m and equal to or less than 20 ?m in the component (B) is equal to or more than 40% by volume and equal to or less than 95% by volume with respect to a total volume of the component (B), and Condition 2: an angle of fall of the thermosetting resin composition for LDS is equal to or less than 35°.

Abstract: Disclosed are a liquid resin composition which contains a (A) liquid epoxy resin, (B) an amine hardener, (C) core-shell rubber particles, and (D) an inorganic filler, wherein the content of the solid components with respect to the total liquid resin composition is equal to or more than 65% by weight, and a semiconductor device using the liquid resin composition.

Abstract: An encapsulation resin composition for preapplication, comprising (a) an epoxy resin, and (b) a curing agent having flux activity, wherein the tack after B-staging is at least 0 gf/5 mm? and at most 5 gf/5 mm?, and the melt viscosity at 130° C. is at least 0.01 Pa·s and at most 1.0 Pa·s; a preapplied encapsulated component and semiconductor device using the composition, and a process of fabrication thereof. The resin composition is less susceptible to air entrapment during provisional placement of semiconductor chips, and excels in workability and reliability.

Abstract: An encapsulation resin composition for preapplication, comprising (a) an epoxy resin, and (b) a curing agent having flux activity, wherein the tack after B-staging is at least 0 gf/5 mm? and at most 5 gf/5 mm?, and the melt viscosity at 130° C. is at least 0.01 Pa·s and at most 1.0 Pa·s; a preapplied encapsulated component and semiconductor device using the composition, and a process of fabrication thereof. The resin composition is less susceptible to air entrapment during provisional placement of semiconductor chips, and excels in workability and reliability.