Patents by Inventor Masayasu Hatashita
Masayasu Hatashita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10559459Abstract: One object of the present invention is to provide a method for producing a silicon nitride film having a high hydrofluoric acid resistance, a high moisture resistance and an appropriate internal stress on a substrate of which the temperature is controlled at 250° C. or lower, the present invention provides a method for producing a silicon nitride film (30) by a plasma chemical vapor deposition method, wherein a processing gas obtained by adding a hydrogen reducing gas in a range of 200 to 2000 volumetric flow rate to an organosilane gas of 1 volumetric flow rate is used, a pressure in a process chamber (40) accommodating the substrate (20) is adjusted to be in a range of 35 to 400 Pa, and a density of high-frequency electric power applied to an electrode installed in the process chamber (40) is adjusted to be in a range of 0.2 to 3.5 W/cm2.Type: GrantFiled: March 11, 2016Date of Patent: February 11, 2020Assignees: TAIYO NIPPON SANSO CORPORATION, SPP TECHNOLOGIES CO., LTD.Inventors: Hiroshi Taka, Masaya Yamawaki, Shoichi Murakami, Masayasu Hatashita
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Patent number: 10280084Abstract: A method of reducing carbon and/or hydrogen atom content ratio relative to contents of silicon atoms and nitrogen atoms in a silicon nitride film formed by a plasma CVD method using an organic silane as a material, and improving film quality such as electrical properties. A silicon nitride film is formed with the organic silane and at least one additive gas selected from a group consisting of hydrogen and ammonia by a plasma CVD method. The silicon nitride film has a carbon atom content ratio of less than 0.8 assuming that a sum of a silicon atom content and a nitrogen atom content in the silicon nitride film is 1. The silicon nitride film has improved properties such as reduced leakage current.Type: GrantFiled: November 17, 2014Date of Patent: May 7, 2019Assignees: SPP TECHNOLOGIES CO., LTD., TAIYO NIPPON SANSO CORPORATIONInventors: Shoichi Murakami, Masayasu Hatashita, Hiroshi Taka, Masaya Yamawaki
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Publication number: 20190088465Abstract: One object of the present invention is to provide a method for producing a silicon nitride film having a high hydrofluoric acid resistance, a high moisture resistance and an appropriate internal stress on a substrate of which the temperature is controlled at 250° C. or lower, the present invention provides a method for producing a silicon nitride film (30) by a plasma chemical vapor deposition method, wherein a processing gas obtained by adding a hydrogen reducing gas in a range of 200 to 2000 volumetric flow rate to an organosilane gas of 1 volumetric flow rate is used, a pressure in a process chamber (40) accommodating the substrate (20) is adjusted to be in a range of 35 to 400 Pa, and a density of high-frequency electric power applied to an electrode installed in the process chamber (40) is adjusted to be in a range of 0.2 to 3.5 W/cm2.Type: ApplicationFiled: March 11, 2016Publication date: March 21, 2019Inventors: Hiroshi TAKA, Masaya YAMAWAKI, Shoichi MURAKAMI, Masayasu HATASHITA
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Publication number: 20160251224Abstract: The invention provides a method capable of reducing carbon atom content ratio and/or hydrogen atom content ratio relative to contents of silicon atoms and nitrogen atoms in a silicon nitride film formed by a plasma CVD method using an organic silane as a material, as well as improving film quality such as electrical properties. A silicon nitride film according to the invention is formed by forming a plasma of an organic silane and at least one additive gas selected from the group consisting of hydrogen and ammonia by a plasma CVD method. The silicon nitride film has a carbon atom content ratio of less than 0.8 assuming that a sum of a silicon atom content and a nitrogen atom content in the silicon nitride film is 1. The silicon nitride film has a hydrogen atom content ratio of less than 0.9 assuming that a sum of the silicon atom content and the nitrogen atom content in the silicon nitride film is 1.Type: ApplicationFiled: November 17, 2014Publication date: September 1, 2016Inventors: Shoichi Murakami, Masayasu Hatashita, Hiroshi Taka, Masaya Yamawaki
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Patent number: 9117660Abstract: A nitride film manufacturing apparatus forms a nitride film on a substrate provided in a chamber by a plasma CVD technique. Specifically, the nitride film manufacturing apparatus includes a controller for calculating a first period for applying first high-frequency power having a relatively high frequency and a second period for applying second high-frequency power having a relatively low frequency in order to obtain desired compressive stress or tensile stress of the nitride film, based on distribution of a refractive index of the nitride film and/or distribution of a deposition rate of the nitride film, the distribution falling within a predetermined numerical range and being obtained using the first high-frequency power and/or the second high-frequency power applied independently for forming the nitride film.Type: GrantFiled: May 22, 2012Date of Patent: August 25, 2015Assignee: SPP Technologies Co., Ltd.Inventors: Shoichi Murakami, Masayasu Hatashita
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Publication number: 20140220711Abstract: A nitride film manufacturing apparatus forms a nitride film on a substrate provided in a chamber by a plasma CVD technique. Specifically, the nitride film manufacturing apparatus includes a controller for calculating a first period for applying first high-frequency power having a relatively high frequency and a second period for applying second high-frequency power having a relatively low frequency in order to obtain desired compressive stress or tensile stress of the nitride film, based on distribution of a refractive index of the nitride film and/or distribution of a deposition rate of the nitride film, the distribution falling within a predetermined numerical range and being obtained using the first high-frequency power and/or the second high-frequency power applied independently for forming the nitride film.Type: ApplicationFiled: May 22, 2012Publication date: August 7, 2014Applicant: SPP Technologies Co., Ltd.Inventors: Shoichi Murakami, Masayasu Hatashita
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Patent number: 8673781Abstract: The present invention relates to a plasma etching method with which a wide-gap semiconductor substrate can be etched with high accuracy. An inert gas is supplied into a processing chamber and plasma is generated from the inert gas, a bias potential is applied to a platen on which a wide-gap semiconductor substrate is placed, thereby making ions generated by the generation of plasma from the inert gas incident on the semiconductor substrate on the platen to thereby heat the semiconductor substrate. After the temperature of the semiconductor substrate reaches an etching temperature between 200° C. and 400° C., an etching gas is supplied into the processing chamber and plasma is generated from the etching gas and a bias potential is applied to the platen, thereby etching the semiconductor substrate while maintaining the temperature of the semiconductor substrate at the etching temperature.Type: GrantFiled: September 6, 2010Date of Patent: March 18, 2014Assignee: Sumitomo Precision Products Co., Ltd.Inventors: Akimitsu Oishi, Shoichi Murakami, Masayasu Hatashita
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Patent number: 8598049Abstract: A deposition method capable of forming an oxide film with a predetermined film thickness ratio using a deposition gas with which a small film thickness ratio is obtained and a deposition gas with which a large film thickness ratio is obtained. When forming an oxide film having a larger film thickness on the surface of a substrate than on the bottom surface of the hole so that the film thickness ratio of the oxide film formed on the surface of the substrate to the oxide film formed on the bottom surface of the hole becomes a predetermined ratio, plasma is generated from a gas mixture including tetraethoxysilane and oxygen to form an oxide film and then plasma is generated from a gas mixture including silane and nitrous oxide.Type: GrantFiled: November 25, 2010Date of Patent: December 3, 2013Assignee: SecureView LLCInventors: Masayasu Hatashita, Akimitsu Oishi, Shoichi Murakami
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Publication number: 20120258604Abstract: A deposition method capable of forming an oxide film with a predetermined film thickness ratio using a deposition gas with which a small film thickness ratio is obtained and a deposition gas with which a large film thickness ratio is obtained. When forming an oxide film having a larger film thickness on the surface of a substrate than on the bottom surface of the hole so that the film thickness ratio of the oxide film formed on the surface of the substrate to the oxide film formed on the bottom surface of the hole becomes a predetermined ratio, plasma is generated from a gas mixture including tetraethoxysilane and oxygen to form an oxide film and then plasma is generated from a gas mixture including silane and nitrous oxide.Type: ApplicationFiled: November 25, 2010Publication date: October 11, 2012Applicant: SPP TECHNOLOGIES CO., LTD.Inventors: Masayasu Hatashita, Akimitsu Oishi, Shoichi Murakami
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Publication number: 20120052688Abstract: The present invention relates to a plasma etching method with which a wide-gap semiconductor substrate can be etched with high accuracy. An inert gas is supplied into a processing chamber and plasma is generated from the inert gas, a bias potential is applied to a platen on which a wide-gap semiconductor substrate is placed, thereby making ions generated by the generation of plasma from the inert gas incident on the semiconductor substrate on the platen to thereby heat the semiconductor substrate. After the temperature of the semiconductor substrate reaches an etching temperature between 200° C. and 400° C., an etching gas is supplied into the processing chamber and plasma is generated from the etching gas and a bias potential is applied to the platen, thereby etching the semiconductor substrate while maintaining the temperature of the semiconductor substrate at the etching temperature.Type: ApplicationFiled: September 6, 2010Publication date: March 1, 2012Applicant: SUMITOMO PRECISION PRODUCTS CO., LTD.Inventors: Akimitsu Oishi, Shoichi Murakami, Masayasu Hatashita