Abstract: An exposure apparatus includes a first mark-forming unit further upstream than an irradiation region for exposure light in a direction of conveyance of a member to be exposed. A mark for meandering detection is detected, and a detection unit detects the mark for meandering detection in a direction intersecting a direction of movement of the member to be exposed. A second mark-forming unit is moved so as to negate an amount of meandering by the member to be exposed, computed on the basis thereof, and an alignment mark is formed rectilinearly in a relative fashion with respect to the member to be exposed. This enables highly accurate, stable exposure whereby, even in a case where the member is supplied continuously, an alignment mark for mask position adjustment can be changed in accordance with the meandering of the member to be exposed and the position of the mask with respect to the member to be exposed can be accurately adjusted.

Abstract: Signal transmission crosstalk between substrates is suppressed even when light emitting elements or light receiving elements are densely arranged. Provided is an optical interconnection device 1 in which optical signals are sent and received between a plurality of semiconductor substrates arranged in a laminated manner. A light emitting element 2 or a light receiving element 3 arranged in one semiconductor substrate 10 includes a pn junction part 10pn that uses the semiconductor substrate 10 as a common semiconductor layer, and is formed on one surface side of the semiconductor substrate 10. For a pair of the light emitting element 2 and the light receiving element 3 respectively sending and receiving optical signals between the different semiconductor substrates 10, light emitted by the light emitting element 2 is transmitted through the semiconductor substrate 10 and received by the light receiving element 3.

Abstract: When a visible light image and an image of a long-wavelength region with a near-infrared wavelength or longer are acquired using one imaging sensor, a clear image of the long-wavelength region with the near-infrared wavelength or longer is obtained. In an imaging sensor 1 in an imaging device, a plurality of photoelectric conversion parts 2 (2A, 2B) are formed on one semiconductor substrate 10. The respective photoelectric conversion parts 2A in a group of the plurality of photoelectric conversion parts 2 (2A, 2B) exhibit spectral sensitivity characteristics that peak in a long-wavelength region with a near-infrared wavelength or longer. The plurality of photoelectric conversion parts 2 (2A, 2B) include photoelectric conversion parts 2B exhibiting spectral sensitivity characteristics that peak in a visible light region.

Abstract: An optical interconnection device for transmitting and receiving an optical signal between a plurality of laminated semiconductor substrates. The optical interconnection device has a plurality of light emitting elements or a plurality of light receiving elements that are arranged in one of the semiconductor substrates and have pn junction parts using the semiconductor substrate as a common semiconductor layer. The light emitting element and the light receiving element, which form a pair and which transmit and receive an optical signal between the different semiconductor substrates, emit and receive light at a common wavelength.

Abstract: An optical interconnection device for transmitting and receiving an optical signal between a plurality of laminated semiconductor substrates. The optical interconnection device has a plurality of light emitting elements or a plurality of light receiving elements arranged in one of the semiconductor substrates that have pn junction parts using the semiconductor substrate as a common semiconductor layer. The light emitting element and the light receiving element, which form a pair and which transmit and receive an optical signal between the different semiconductor substrates, emit and receive light at a common wavelength.

Abstract: Provided is a semiconductor ring laser apparatus including an Si semiconductor substrate, a ring resonator configured by an optical waveguide formed in the Si semiconductor substrate, a semiconductor laser part that is provided with a light emitting amplification part at least in a part of the optical waveguide and that generates two beams of laser light traveling around in opposite directions in the ring resonator, and a light detection part formed in the Si semiconductor substrate to extract the two beams of laser light from the ring resonator and detect a frequency difference between the two beams of laser light. The light emitting amplification part includes a pn junction obtained by annealing on a second semiconductor layer, which is obtained by doping a first semiconductor layer in the Si semiconductor substrate with boron at high concentration, the annealing being performed while radiating light onto the second semiconductor layer.

Abstract: An exposure apparatus includes a first mark-forming unit further upstream than an irradiation region for exposure light in a direction of conveyance of a member to be exposed. A mark for meandering detection is detected, and a detection unit detects the mark for meandering detection in a direction intersecting a direction of movement of the member to be exposed. A second mark-forming unit is moved so as to negate an amount of meandering by the member to be exposed, computed on the basis thereof, and an alignment mark is formed rectilinearly in a relative fashion with respect to the member to be exposed. This enables highly accurate, stable exposure whereby, even in a case where the member is supplied continuously, an alignment mark for mask position adjustment can be changed in accordance with the meandering of the member to be exposed and the position of the mask with respect to the member to be exposed can be accurately adjusted.