Abstract: The present invention pertains to a drug for the treatment and/or prevention of pain, more specifically to a medicinal preparation for external use to treat and/or prevent peripheral neuropathic pain, the medicinal preparation containing as an active ingredient N2-{[1-ethyl-6-(4-methylphenoxy)-1H-benzimidazol-2-yl]methyl}-L-alaninamide.

Abstract: Provided is a fiber-reinforced thermoplastic resin prepreg which exhibits high interfacial adhesion between reinforcement fibers and a matrix resin, while having excellent interlaminar fracture resistance. The fiber-reinforced thermoplastic resin prepreg of the present invention comprises: a matrix resin comprising a polyarylketone resin and a polyetherimide resin; and a carbon fiber, wherein the polyetherimide resin in the matrix resin comprises a polyetherimide resin having a structural unit represented by Formula (1), an amount of the polyetherimide resin in the matrix resin (100% by mass) is 3% by mass to 25% by mass, and an amount of the polyarylketone resin in the matrix resin (100% by mass) is 75% by mass or more.

Abstract: The present invention relates to a transdermal absorption preparation that can maintain a blood concentration sufficient to exert the efficacy of tandospirone, and also shows good storage stability against heat, humidity, and light. According to the present invention, a transdermal absorption preparation containing tandospirone or a pharmaceutically acceptable salt thereof, and levulinic acid, which is superior in the skin permeability of tandospirone or a pharmaceutically acceptable salt thereof in the preparation, and shows good preservation stability against heat and light can be provided.

Abstract: The invention enables more efficient CTL induction by applying a transdermal preparation containing a WT1 protein-derived cancer antigen peptide and an ether-type additive, which is liquid at 20° C., to a WT1 protein-derived cancer antigen peptide. The ether-type additive is represented by the formula (1): R1—O—R2 (1), wherein R1 is a hydrocarbon group having 8-24 carbon atoms, and R2 is a group represented by the formula (2): or a group represented by the formula (3): —(CH2CH2O)mH (3), wherein m is an integer of 1-18.

Abstract: The present invention pertains to a drug for the treatment and/or prevention of pain, more specifically to a medicinal preparation for external use to treat and/or prevent peripheral neuropathic pain, the medicinal preparation containing as an active ingredient N2-{[1-ethyl-6-(4-methylphenoxy)-1H-benzimidazol-2-yl]methyl}-L-alaninamide.

Abstract: A semiconductor device which provides compactness and enhanced drain withstand voltage. The semiconductor device includes: a gate electrode; a source electrode spaced from the gate electrode; a drain electrode located opposite to the source electrode with respect to the gate electrode in a plan view and spaced from the gate electrode; at least one field plate electrode located between the gate and drain electrodes in a plan view, provided over the semiconductor substrate through an insulating film and spaced from the gate electrode, source electrode and drain electrode; and at least one field plate contact provided in the insulating film, coupling the field plate electrode to the semiconductor substrate. The field plate electrode extends from the field plate contact at least either toward the source electrode or toward the drain electrode in a plan view.

Abstract: A first contact, a second impurity region, and a second low-concentration impurity region form a Schottky barrier diode. The second impurity region has the same impurity concentration as those of first impurity regions, and thus can be formed in the same process as forming the first impurity regions. In addition, the second low-concentration impurity region has the same impurity concentration as those of first low-concentration impurity regions, and thus can be formed in the same process as forming the first low-concentration impurity regions.

Abstract: A second epitaxial layer is grown epitaxially over a first epitaxial layer. The first epitaxial layer includes an epitaxially grown layer and a defect layer. The defect layer is disposed over the epitaxially grown layer and serves as a surface layer of the first epitaxial layer. The defect density of the defect layer is 5×1017 cm?2 or more. Defects penetrating through the defect layer form loops in the second epitaxial layer.

Abstract: A first contact, a second impurity region, and a second low-concentration impurity region form a Schottky barrier diode. The second impurity region has the same impurity concentration as those of first impurity regions, and thus can be formed in the same process as forming the first impurity regions. In addition, the second low-concentration impurity region has the same impurity concentration as those of first low-concentration impurity regions, and thus can be formed in the same process as forming the first low-concentration impurity regions.

Abstract: A second epitaxial layer is grown epitaxially over a first epitaxial layer. The first epitaxial layer includes an epitaxially grown layer and a defect layer. The defect layer is disposed over the epitaxially grown layer and serves as a surface layer of the first epitaxial layer. The defect density of the defect layer is 5×1017 cm?2 or more. Defects penetrating through the defect layer form loops in the second epitaxial layer.

Abstract: The invention enables more efficient CTL induction by applying a transdermal preparation containing a WT1 protein-derived cancer antigen peptide and an ether-type additive, which is liquid at 20° C., to a WT1 protein-derived cancer antigen peptide. The ether-type additive is represented by the formula (1): R1—O—R2 (1), wherein R1 is a hydrocarbon group having 8-24 carbon atoms, and R2 is a group represented by the formula (2): or a group represented by the formula (3): —(CH2CH2O)mH (3), wherein m is an integer of 1-18.

Abstract: A second epitaxial layer is grown epitaxially over a first epitaxial layer. The first epitaxial layer includes an epitaxially grown layer and a defect layer. The defect layer is disposed over the epitaxially grown layer and serves as a surface layer of the first epitaxial layer. The defect density of the defect layer is 5×1017 cm?2 or more. Defects penetrating through the defect layer form loops in the second epitaxial layer.

Abstract: A semiconductor device which provides compactness and enhanced drain withstand voltage. The semiconductor device includes: a gate electrode; a source electrode spaced from the gate electrode; a drain electrode located opposite to the source electrode with respect to the gate electrode in a plan view and spaced from the gate electrode; at least one field plate electrode located between the gate and drain electrodes in a plan view, provided over the semiconductor substrate through an insulating film and spaced from the gate electrode, source electrode and drain electrode; and at least one field plate contact provided in the insulating film, coupling the field plate electrode to the semiconductor substrate. The field plate electrode extends from the field plate contact at least either toward the source electrode or toward the drain electrode in a plan view.

Abstract: A semiconductor device which provides compactness and enhanced drain withstand voltage. The semiconductor device includes: a gate electrode; a source electrode spaced from the gate electrode; a drain electrode located opposite to the source electrode with respect to the gate electrode in a plan view and spaced from the gate electrode; at least one field plate electrode located between the gate and drain electrodes in a plan view, provided over the semiconductor substrate through an insulating film and spaced from the gate electrode, source electrode and drain electrode; and at least one field plate contact provided in the insulating film, coupling the field plate electrode to the semiconductor substrate. The field plate electrode extends from the field plate contact at least either toward the source electrode or toward the drain electrode in a plan view.

Abstract: A nitride semiconductor layer formed from a nitride semiconductor is provided on at least one surface side of a semiconductor substrate. Impurity regions (a source region, a drain region, and the like) are provided on one surface side in the nitride semiconductor layer and contain an impurity of a first conductivity type. In addition, amorphous regions (a first amorphous region and a second amorphous region) are a part of the impurity regions and are located in a surface layer of the impurity regions. In addition, metallic layers (a source electrode and a drain electrode) come into contact with the amorphous regions (the first amorphous region and the second amorphous region).

Abstract: A first contact, a second impurity region, and a second low-concentration impurity region form a Schottky barrier diode. The second impurity region has the same impurity concentration as those of first impurity regions, and thus can be formed in the same process as forming the first impurity regions. In addition, the second low-concentration impurity region has the same impurity concentration as those of first low-concentration impurity regions, and thus can be formed in the same process as forming the first low-concentration impurity regions.

Abstract: A patch preparation containing a support and an adhesive layer formed on one surface of the support, wherein the adhesive layer contains 2-(4-ethyl-1-piperazinyl)-4-(4-fluorophenyl)-5,6,7,8,9,10-hexahydrocycloocta[b]pyridine or a physiologically acceptable acid addition salt thereof, an acrylic polymer, lactic acid, sesame oil and one or more kinds of stabilizers selected from 2-mercaptobenzimidazole, 2,6-di-tert-butyl-4-methylphenol and propyl gallate. A patch preparation containing a support and an adhesive layer containing lactic acid and magnesium aluminometasilicate and formed on at least one surface of the support, which preparation is superior in both skin permeability and adhesiveness in the presence of water.

Abstract: The present invention relates to an external preparation for transdermal administration, which remarkably enhances the skin permeability of 2-(4-ethyl-1-piperazinyl)-4-(4-fluorophenyl)-5,6,7,8,9,10-hexahydrocycloocta[b]pyridine (compound A). The adhesive preparation of the present invention has an adhesive layer formed on one surface of a support, and the adhesive layer contains (i) compound A or a physiologically acceptable acid addition salt thereof, (ii) an adhesive, (iii) lactic acid, and (iv) an additive containing a particular permeation enhancer, whereby remarkably superior skin permeability is provided.

Abstract: According to one embodiment, a power supply circuit includes an input terminal, a rectifier circuit, a power factor improvement circuit, a DC/DC converter, and a control module. The DC/DC converter converts the level of a DC voltage output from the power factor improvement circuit. The control module determines on the basis of the output voltage of the rectifier circuit whether an input power supply supplied to the input terminal is AC or DC. The control module generates a DC power supply by use of the power factor improvement circuit and DC/DC converter when the input power supply is AC and generates a DC power supply by controlling the operation of the power factor improvement circuit and DC/DC converter according to the voltage of input DC power supply when the input power supply is DC.

Abstract: A second epitaxial layer is grown epitaxially over a first epitaxial layer. The first epitaxial layer includes an epitaxially grown layer and a defect layer. The defect layer is disposed over the epitaxially grown layer and serves as a surface layer of the first epitaxial layer. The defect density of the defect layer is 5×1017 cm?2 or more. Defects penetrating through the defect layer form loops in the second epitaxial layer.