Abstract: In order to ensure quality even when a sheet-like base material is thin while improving efficiency of production, a plasma treatment apparatus disclosed herein includes a plasma treatment chamber X for treating a sheet-like base material Z with plasma, a high-frequency antenna 3 for generating plasma in the plasma treatment chamber X, and a feeding mechanism 10 for feeding the sheet-like base material Z into the plasma treatment chamber X in a vertical direction.

Abstract: In order to ensure quality even when a sheet-like base material is thin while improving efficiency of production, a plasma treatment apparatus disclosed herein includes a plasma treatment chamber X for treating a sheet-like base material Z with plasma, a high-frequency antenna 3 for generating plasma in the plasma treatment chamber X, and a feeding mechanism 10 for feeding the sheet-like base material Z into the plasma treatment chamber X in a vertical direction.

Abstract: A repeller structure comprises a target member configured to be sputtered by a plasma to emit given ions, and provided with a through-hole penetrating between a sputterable surface and a reverse surface thereof, and a repeller body which supports the target member while being inserted in the through-hole of the target member, and has a repeller surface exposed on the side of the sputterable surface through the through-hole. The target member is made of a material selected from the group consisting of gallium oxide, gallium nitride, gallium phosphide, gallium arsenide and gallium fluoride.

Abstract: Provided is a method of controlling an ion implantation apparatus 100 which includes: a mass separator 3 for sorting out and outputting ions having a specific mass number and valence from an ion beam IB extracted from an ion source 2; an acceleration tube 4 for accelerating or decelerating the ion beam IB output from the mass separator 3; and an energy separator 5 for sorting out and outputting ions having a specific energy from the ion beam IB output from the acceleration tube 4. The method comprises, during an acceleration mode, controlling an acceleration voltage VA such that it is prevented from becoming 0 kV.

Abstract: Provided is a method of controlling an ion implantation apparatus 100 which includes: a mass separator 3 for sorting out and outputting ions having a specific mass number and valence from an ion beam IB extracted from an ion source 2; an acceleration tube 4 for accelerating or decelerating the ion beam IB output from the mass separator 3; and an energy separator 5 for sorting out and outputting ions having a specific energy from the ion beam IB output from the acceleration tube 4. The method comprises, during an acceleration mode, controlling an acceleration voltage VA such that it is prevented from becoming 0 kV.

Abstract: A repeller structure comprises a target member configured to be sputtered by a plasma to emit given ions, and provided with a through-hole penetrating between a sputterable surface and a reverse surface thereof, and a repeller body which supports the target member while being inserted in the through-hole of the target member, and has a repeller surface exposed on the side of the sputterable surface through the through-hole. The target member is made of a material selected from the group consisting of gallium oxide, gallium nitride, gallium phosphide, gallium arsenide and gallium fluoride.

Abstract: An ion implantation apparatus includes an ion source having an arc chamber generating ions and a drawing electrode drawing ions from the arc chamber, a mass separator transporting only ions desired for implantation, an ion implantation chamber in which the material to be implanted by ions is placed, and a controller means for automatically controlling the distance between the arc chamber and the drawing electrode incrementally in accordance with a theoretical calculation using normalized perveance considering the kind of ions to be implanted, the accelerating voltage, and the ion current and current density distribution.

Abstract: A method of forming a diamond film on a substrate wherein hydrogen, a hydrocarbon series gas, an inert gas, an organic compound series gas or a mixture of such gases is introduced into a vacuum vessel to contact a substrate and carbon is evaporated by are discharge at a carbon cathode while applying a voltage to the substrate to deposit carbon on the substrate thus forming a diamond film on the substrate. A silicon series gas, a germanium series gas or a mixture thereof may be also introduced into the vessel with the foregoing gas or gases. While the carbon is being deposited on the substrate, thermoelectrons may also be supplied onto the substrate, and, further, high frequency discharge may be generated in a space between the substrate and the cathodes.