Abstract: To provide a secondary cell including an electrode active material that is a compound represented by General Formula (1) below: where n is a natural number of from 4 through 8, a is a natural number of from 1 through 4, R1 and R2 may be identical to or different from each other and are each a hydrogen atom, an alkyl group, or an aromatic hydrocarbon group that may have a substituent, Y is a substituent, and b is an integer of from 0 through 3 and a+b is 4 or less in General Formula (1).

Abstract: Provided is a secondary battery that includes an electrode active material including an organic compound represented by the following General Formula 1. Ar—(OH)n??<General Formula 1> In the General Formula 1, Ar denotes at least one selected from the group consisting of 1,1-binaphthalene, anthracene, triphenylene, tetraphenylene, and pyrene, and is optionally substituted with a substituent. The substituent of Ar is at least one selected from the group consisting of an OH group, a carbonyl group produced through oxidization of the OH group, an alkyl group containing 3 or less carbon atoms, a halogen atom, and an amino group. n denotes an integer in a range of from 2 through 8.

Abstract: Disclosed herein is a tread for a tire. The tread includes at least one elongate block of rubbery material of width W and length L with L>>W. This elongate block extends in a circumferential direction (X) when the tread is mounted on the tire. The elongate block includes a contact surface intended to come into contact with the ground and a first lateral wall and a second lateral wall delimiting this contact surface. The elongate block includes a plurality of sipes opening onto the contact surface of the elongate block, with each sine extending in an oblique direction opening onto the first lateral wall and onto the second lateral wall. The sipes are distributed over the contact surface of the block in such a way that when one sipe reaches the second lateral wall another sipe starts out from the first lateral wall, at a same circumferential level (N) on the elongate block. With the sipes delimiting sub-blocks in the elongate block, at least two of these sub-blocks are configured differently in the tread.

Abstract: Some embodiments include a voltage generator to generate a voltage to apply to a line used to access a memory cell of a memory device in which the voltage is applied to the line when the memory cell is not being accessed, and a power controller to cause the voltage to change between refresh operations of the memory device. Other embodiments including additional apparatus, systems, and methods are described.

Abstract: To provide an amine compound, represented by General Formula (I) below: [In General Formula (I), R1 and R2 represent a substituted or unsubstituted alkyl group, a substituted or unsubstituted aralkyl group, or a substituted or unsubstituted aromatic hydrocarbon group, which may be identical or different; m and n are an integer of 1 or 0; Ar1 represents a substituted or unsubstituted aromatic hydrocarbon group; Ar2 and Ar3 represent a substituted or unsubstituted alkyl group, a substituted or unsubstituted aralkyl group, or a substituted or unsubstituted aromatic hydrocarbon group; and Ar1 and Ar2 or Ar2 and Ar3 may bind to each other to form a substituted or unsubstituted heterocyclic group including a nitrogen atom.

Abstract: A memory device includes a command decoder and control interface logic. One or more external inputs, such as row and column address strobes, communicate with the command decoder through the control interface logic. A control signal is also in communication with the control interface logic. During operation of a drowsy mode in the memory device, a self-refresh signal causes the control signal to disable the external inputs. With the external inputs disabled, command hazards are reduced when exiting drowsy mode.

Abstract: Some embodiments include a voltage generator to generate a voltage to apply to a line used to access a memory cell of a memory device in which the voltage is applied to the line when the memory cell is not being accessed, and a power controller to cause the voltage to change between refresh operations of the memory device. Other embodiments including additional apparatus, systems, and methods are described.

Abstract: An image forming apparatus includes an image bearing member having a photosensitive layer and a sub-surface layer having a charge transportability, overlying the photosensitive layer wherein the sub-surface layer is formed of a cured material formed of a radical polymerizable monomer having three or more functional groups with no charge transport structure and a radical polymerizable compound having a charge transport structure, wherein the arithmetical mean roughness WRa of about each of frequency components of HMH, HML, and HLH obtained by wavelet conversion of values measured by a surface texture and the contour form measuring device ranges from 0.0002 ?m to 0.005 ?m and WRa (LLH) is 0.05 ?m or less, wherein the sub-surface layer contains at least one of a particular oxazole compound or a particular diamine compound.

Abstract: Apparatus and methods provide built-in testing enhancements in integrated circuits. These testing enhancements permit, for example, continuity testing to pads and/or leakage current testing for more than one pad. The disclosed techniques may permit more thorough testing of integrated circuits at the die level, thereby reducing the number of defective devices that are further processed, saving both time and money. In one embodiment, a test signal is routed in real time through a built-in path that includes an input buffer for a pad under test. This permits testing of continuity between the pad and the input buffer. An output buffer can also be tested as applicable. In another embodiment, two or more pads of a die are electronically coupled together such that leakage current testing applied by a probe connected to one pad can be used to test another pad.

Abstract: Some embodiments include a voltage generator to generate a voltage to apply to a line used to access a memory cell of a memory device in which the voltage is applied to the line when the memory cell is not being accessed, and a power controller to cause the voltage to change during a time interval after a refresh operation of the memory device. Other embodiments including additional apparatus, systems, and methods are disclosed.

Abstract: A memory device includes a command decoder and control interface logic. One or more external inputs, such as row and column address strobes, communicate with the command decoder through the control interface logic. A control signal is also in communication with the control interface logic. During operation of a drowsy mode in the memory device, a self-refresh signal causes the control signal to disable the external inputs. With the external inputs disabled, command hazards are reduced when exiting drowsy mode.

Abstract: A memory device includes a command decoder and control interface logic. One or more external inputs, such as row and column address strobes, communicate with the command decoder through the control interface logic. A control signal is also in communication with the control interface logic. During operation of a drowsy mode in the memory device, a self-refresh signal causes the control signal to disable the external inputs. With the external inputs disabled, command hazards are reduced when exiting drowsy mode.

Abstract: To provide an amine compound, represented by General Formula (I) below: [In General Formula (I), R1 and R2 represent a substituted or unsubstituted alkyl group, a substituted or unsubstituted aralkyl group, or a substituted or unsubstituted aromatic hydrocarbon group, which may be identical or different; m and n are an integer of 1 or 0; Ar1 represents a substituted or unsubstituted aromatic hydrocarbon group; Ar2 and Ar3 represent a substituted or unsubstituted alkyl group, a substituted or unsubstituted aralkyl group, or a substituted or unsubstituted aromatic hydrocarbon group; and Ar1 and Ar2 or Ar2 and Ar3 may bind to each other to form a substituted or unsubstituted heterocyclic group including a nitrogen atom.

Abstract: A memory device includes a command decoder and control interface logic. One or more external inputs, such as row and column address strobes, communicate with the command decoder through the control interface logic. A control signal is also in communication with the control interface logic. During operation of a drowsy mode in the memory device, a self-refresh signal causes the control signal to disable the external inputs. With the external inputs disabled, command hazards are reduced when exiting drowsy mode.

Abstract: An integrated circuit containing memory includes IEEE 1149.1 (JTAG) controlled self-repair system that permits permanent repair of the memory after the integrated circuit has been packaged. The JTAG controlled self-repair system allows a user to direct circuitry to blow fuses using an externally supplied voltage to electrically couple or isolate components to permanently repair a memory location with JTAG standard TMS and TCK signals. The system may optionally sequentially repair more than one memory location using a repair sequencer.

Abstract: An integrated circuit containing memory includes IEEE 1149.1 (JTAG) controlled self-repair system that permits permanent repair of the memory after the integrated circuit has been packaged. The JTAG controlled self-repair system allows a user to direct circuitry to blow fuses using an externally supplied voltage to electrically couple or isolate components to permanently repair a memory location with JTAG standard TMS and TCK signals. The system may optionally sequentially repair more than one memory location using a repair sequencer.