Abstract: A resist composition comprising a polymer comprising recurring units (a) of formula (1) and having a Mw of 1,000-500,000 as base resin is provided. R1 is H or methyl, X is a single bond or —C(?O)—O—R5—, R2 is a single bond or C1-C4 alkylene, R3 is C2-C8 alkylene, R4 is an acid labile group, R5 is a single bond or C1-C4 alkylene, and 0<a?1.0. The composition is of dual-tone type in that an intermediate dose region of resist film is dissolved in a developer, but unexposed and over-exposed regions of resist film are insoluble.

Abstract: A resist composition comprising a polymer comprising recurring units of lactone and a PAG is provided. The resist composition has a high dissolution contrast during organic solvent development, and improved resist properties including MEF and CDU and forms a fine hole pattern with improved roundness and size control.

Abstract: A negative pattern is formed by applying a resist composition onto a substrate, exposing the resist film, and developing the exposed resist film in an organic solvent developer. The process further involves coating the negative pattern with a shrink agent solution of a polymer comprising recurring units capable of forming lactone under the action of acid in a C7-C16 ester or C8-C16 ketone solvent, baking the coating, and removing the excessive shrink agent via organic solvent development for thereby shrinking the size of spaces in the pattern.

Abstract: A positive resist composition is provided comprising a polymer comprising recurring units having a carboxyl or phenolic hydroxyl group substituted with an acid labile group and recurring units of 4-pyrone ester, and having a Mw of 1,000-500,000. The resist composition has a satisfactory effect of suppressing acid diffusion and a high resolution, and forms a pattern of good profile and minimal edge roughness after exposure.

Abstract: A negative pattern is formed by applying a resist composition onto a substrate, exposing the resist film, and developing the exposed resist film in an organic solvent developer. The process further involves coating the negative pattern with a shrink agent solution of a polymer comprising recurring units capable of forming lactam under the action of acid in a C7-C16 ester or C7-C16 ketone solvent, baking the coating, and removing the excessive shrink agent via organic solvent development for thereby shrinking the size of spaces in the pattern.

Abstract: A negative resist composition comprising a polymer comprising recurring units (a) of formula (1) and having a Mw of 1,000-500,000 as base resin is provided. R1 is H or methyl, X is a single bond or —C(?O)—O—R4—, R2 is a single bond or C1-C4 alkylene, R3 is C2-C8 alkylene, R4 is a single bond or C1-C4 alkylene, and 0<a?1.0. The composition exhibits a high resolution due to controlled acid diffusion and forms a resist film which is unsusceptible to swell in the developer and hence to pattern collapse.

Abstract: A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units having a carboxyl and/or hydroxyl group optionally substituted with an acid labile group, an oxirane or oxetane compound having a hydrophilic group, and an acid generator onto a substrate, prebaking, exposing, baking, and developing in an organic solvent so that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. The resist composition exhibits a high sensitivity and high dissolution contrast during organic solvent development and forms a fine hole or trench pattern via positive/negative reversal.

Abstract: A sulfonium salt of formula (1) is provided wherein A1 is a divalent hydrocarbon group, A2 is a divalent hydrocarbon group, A3 is hydrogen or a monovalent hydrocarbon group, B1 is an alkylene or arylene group, k is 0 or 1, R1, R2 and R3 are alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl. A resist composition comprising the sulfonium salt as PAG exhibits a very high resolution when processed by EB and EUV lithography. A pattern with minimal LER is obtainable.

Abstract: The present invention provides a polymer compound for a conductive polymer, having one or more kinds of repeating units “a” represented by the following general formula (1), the polymer compound for a conductive polymer being synthesized by ion exchange of a lithium salt, a sodium salt, a potassium salt, a sulfonium compound salt, or a nitrogen compound salt of sulfonic acid residue with a weight average molecular weight in the range of 1,000 to 500,000, wherein R1 represents a hydrogen atom or a methyl group, R2 represents a fluorine atom or a trifluoromethyl group, “m” represents an integer of 1 to 4, and “a” satisfies 0<a?1.0. There can be provided a polymer compound for a conductive polymer having a specific superacidic sulfo group that is soluble in an organic solvent and suitably used for fuel cells or a dopant for conductive materials.

Abstract: A polymer for resist use is obtainable from a monomer having formula (1) wherein R1 is H, CH3 or CF3, R2 and R3 each are H or a monovalent hydrocarbon group, X1 is a divalent hydrocarbon group, k1=0 or 1, and Z forms a 5 or 6-membered alicyclic ring. A resist composition comprising the polymer is shelf stable and displays a high dissolution contrast, controlled acid diffusion and low roughness during both alkaline development and organic solvent development.

Abstract: A positive resist composition is provided comprising a polymer comprising recurring units having a carboxyl or phenolic hydroxyl group substituted with an acid labile group and recurring units of 2-pyrone ester, and having a Mw of 1,000-500,000. The resist composition has a satisfactory effect of suppressing acid diffusion and a high resolution, and forms a pattern of good profile and minimal edge roughness after exposure.

Abstract: A photoresist film containing a sulfonium or iodonium salt of carboxylic acid having an amino group has a high dissolution contrast and offers improved resolution, wide focus margin and minimal LWR when used as a positive resist film adapted for alkaline development and a negative resist film adapted for organic solvent development.

Abstract: A polymer comprising recurring units of butyrolactone (meth)acrylate, recurring units having a carboxyl or phenolic group which is substituted with an acid labile group, and recurring units having a phenol group or an adhesive group in the form of 2,2,2-trifluoro-1-hydroxyethyl is quite effective as a base resin for resist. A positive resist composition comprising the polymer is improved in such properties as a contrast of alkali dissolution rate before and after exposure, acid diffusion suppressing effect, resolution, and profile and edge roughness of a pattern after exposure.

Abstract: A positive resist composition is provided comprising a polymer comprising recurring units having a carboxyl or phenolic hydroxyl group substituted with an acid labile group and recurring units of hydroxyanthraquinone or hydroxy-2,3-dihydro-1,4-anthracenedione methacrylate, and having a Mw of 1,000-500,000. The resist composition has a satisfactory effect of suppressing acid diffusion and a high resolution, and forms a pattern of good profile and minimal edge roughness after exposure.

Abstract: The present invention provides a polymer compound for a conductive polymer, containing one or more repeating units (a) represented by the following general formula (1), the polymer compound for a conductive polymer being synthesized by ion-exchange of a lithium salt, a sodium salt, a potassium salt, or a nitrogen compound salt of a sulfonic acid residue, and having a weight average molecular weight in the range of 1,000 to 500,000. There can be provided a polymer compound for a conductive polymer having a specific superacidic sulfo group which is soluble in an organic solvent, and suitably used for a fuel cell or a dopant for a conductive material.

Abstract: The present invention provides a polymer compound for a conductive polymer, containing one or more repeating units (a) represented by the following general formula (1), the polymer compound for a conductive polymer being synthesized by ion-exchange of a lithium salt, a sodium salt, a potassium salt, or a nitrogen compound salt of a sulfonic acid residue, and having a weight average molecular weight in the range of 1,000 to 500,000. There can be provided a polymer compound for a conductive polymer having a specific superacidic sulfo group which is soluble in an organic solvent, and suitably used for a fuel cell or a dopant for a conductive material.

Abstract: A polymer for resist use is obtainable from a monomer having formula (1) wherein R1 is H, CH3 or CF3 and R2 is H or an acid labile group. A resist composition comprising the polymer displays a high sensitivity and a high dissolution contrast during both alkaline development and organic solvent development.

Abstract: A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, PEB, and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition comprising a polymer adapted to form a lactone ring under the action of an acid so that the polymer may reduce its solubility in an organic solvent displays a high dissolution contrast. A fine hole or trench pattern can be formed therefrom.

Abstract: A chemically amplified positive resist composition of better performance can be formulated using a polymer having a quencher incorporated therein, specifically a polymer comprising recurring units having a carbamate structure which is decomposed with an acid to generate an amino group and optionally recurring units having an acid labile group capable of generating a carboxyl and/or hydroxyl group under the action of an acid. The polymer is highly effective for suppressing diffusion of acid and diffuses little itself, and the composition forms a pattern of rectangular profile at a high resolution.

Abstract: A pattern is formed by coating a resist composition comprising a resin component comprising recurring units of formula (1) and a photoacid generator of formula (2) onto a substrate, baking, exposure, PEB and developing in an organic solvent. In formulae (1) and (2), R1 and R2 are C1-C3 alkyl, R4 is hydrogen or methyl, A is hydrogen or trifluoromethyl, R101, R102 and R103 are hydrogen or a monovalent hydrocarbon group, m and n are 0-5, p is 0-4, and L is a single bond or a divalent hydrocarbon group.