Abstract: An inspecting device serves to inspect a solar cell. The inspecting device includes an irradiation part for irradiating with pulsed light and a detection part having a detector for detecting an electromagnetic wave pulse radiated from the solar cell depending on the irradiation with the pulsed light. The detector detects an electric field intensity of the electromagnetic wave pulse depending on irradiation with probe light emitted from a light source (a femtosecond laser) of the pulsed light. Moreover, the inspecting device includes a delay part for delaying a timing for detecting the electromagnetic wave pulse in the detector. Furthermore, the inspecting device includes an electromagnetic wave pulse analysis part for detecting a negative peak of the electric field intensity in a temporal waveform of the electromagnetic wave pulse.

Abstract: An electromagnetic radiation generating device is a device that generates electromagnetic wave pulses from a plane surface. The electromagnetic radiation generating device includes an electromagnetic radiation generating element, a light irradiating unit. The electromagnetic radiation generating element includes: a depletion layer forming body formed by stacking a p-type silicon layer and an n-type silicon layer in a planar pattern; a light receiving surface electrode formed on one surface of the depletion layer forming body, the light receiving surface electrode including a plurality of parallel electrode parts that are equally spaced while a forming distance is maintained between the parallel electrode parts, the forming distance corresponding to the wavelength of the electromagnetic wave pulses generated from the depletion layer forming body; and a rear surface electrode formed on the opposite surface of the depletion layer forming body.

Abstract: An electromagnetic radiation generating device is a device that generates electromagnetic wave pulses from a plane surface. The electromagnetic radiation generating device includes an electromagnetic radiation generating element, a light irradiating unit. The electromagnetic radiation generating element includes: a depletion layer forming body formed by stacking a p-type silicon layer and an n-type silicon layer in a planar pattern; a light receiving surface electrode formed on one surface of the depletion layer forming body, the light receiving surface electrode including a plurality of parallel electrode parts that are equally spaced while a forming distance is maintained between the parallel electrode parts, the forming distance corresponding to the wavelength of the electromagnetic wave pulses generated from the depletion layer forming body; and a rear surface electrode formed on the opposite surface of the depletion layer forming body.

Abstract: A semiconductor inspection apparatus (100) is an apparatus for inspecting a semiconductor device. The semiconductor inspection apparatus (100) includes a pulsed laser light source (14) for emitting pulsed laser light (2) toward a substrate (1) with a semiconductor device formed thereon, an electromagnetic wave pulse application part (18) for applying a reverses-biasing electromagnetic wave pulse (4) for applying a reverse bias to an application position (10) which receives the pulsed laser light (2), and a detection part (17) for detecting an electromagnetic wave pulse (3) emitted from the application position (10) in response to the application of the pulsed laser light (2).

Abstract: A technology of inspecting a photoexcited carrier generation area of a photo device in a non-contact manner is provided. An inspection apparatus inspects a photovoltaic cell panel in which the photo device is formed. The inspection apparatus includes an irradiation part that irradiates the photovoltaic cell panel with pulsed light from a light receiving surface side and a detecting part (detector) that detects electric field intensity of a terahertz wave pulse, which is generated according to the irradiation of the pulsed light.

Abstract: For a semiconductor device S, an inspection is performed in a zero-bias state by use of electromagnetic waves generated by irradiation of pulsed laser light, and an inspection range is set with reference to layout information of the semiconductor device S to perform two-dimensional scanning by inspection light L1 of the pulsed laser light within the range. Moreover, with the inspection range of the semiconductor device S arranged at a predetermined position with respect to an optical axis of an optical system, and with a solid immersion lens 36 disposed for the semiconductor device S, by a galvanometer scanner 30 being scanning means, the inspection range of the semiconductor device S is two-dimensionally scanned by the inspection light L1 via the solid immersion lens 36, and an electromagnetic wave emitted from the semiconductor device S is detected by a photoconductive element 40.

Abstract: It comprises a voltage-application apparatus 2 for applying a predetermined voltage to a semiconductor device 1, and holding it therein; a laser apparatus 3 for generating a laser beam 4 having a predetermined wavelength; an irradiation apparatus 5 for irradiating the laser beam 4 onto the two-dimensional circuit of the semiconductor device 1, which is held in the applied state, so as to scan it two-dimensionally; an electromagnetic-wave detection/conversion apparatus 6 for detecting an electromagnetic wave, which is radiated from the laser-beam irradiation position, and converting the electromagnetic wave into an electric-field signal, which changes temporally; and phase-judgement means 71, to which the temporally-changing electric-field signal output from the detection/conversion apparatus 6 is input, for judging the phase of the electric-field signal.

Abstract: An apparatus for diagnosing a fault in a semiconductor device includes an laser applying unit, a detection/conversion unit, and a fault diagnosis unit. The semiconductor device is held at a state where no bias voltage is applied thereto. The laser applying unit then applies a pulse laser beam having a predetermined wavelength to the semiconductor device so as to two-dimensionally scan the semiconductor device with the pulse laser beam. The detection/conversion unit detects an electromagnetic wave generated from a laser applied position in the semiconductor device, and converts the detected electromagnetic wave into a time-varying voltage signal that corresponds to a time-varying amplitude of an electric field of the electromagnetic wave. The fault diagnosis unit derives an electric field distribution in the semiconductor device on the basis of the time-varying voltage signal to perform fault diagnosis on the semiconductor device.

Abstract: It comprises a voltage-application apparatus 2 for applying a predetermined voltage to a semiconductor device 1, and holding it therein; a laser apparatus 3 for generating a laser beam 4 having a predetermined wavelength; an irradiation apparatus 5 for irradiating the laser beam 4 onto the two-dimensional circuit of the semiconductor device 1, which is held in the applied state, so as to scan it two-dimensionally; an electromagnetic-wave detection/conversion apparatus 6 for detecting an electromagnetic wave, which is radiated from the laser-beam irradiation position, and converting the electromagnetic wave into an electric-field signal, which changes temporally; and phase-judgement means 71, to which the temporally-changing electric-field signal output from the detection/conversion apparatus 6 is input, for judging the phase of the electric-field signal.

Abstract: An apparatus for diagnosing a fault in a semiconductor device includes an laser applying unit, a detection/conversion unit, and a fault diagnosis unit. The semiconductor device is held at a state where no bias voltage is applied thereto. The laser applying unit then applies a pulse laser beam having a predetermined wavelength to the semiconductor device so as to two-dimensionally scan the semiconductor device with the pulse laser beam. The detection/conversion unit detects an electromagnetic wave generated from a laser applied position in the semiconductor device, and converts the detected electromagnetic wave into a time-varying voltage signal that corresponds to a time-varying amplitude of an electric field of the electromagnetic wave. The fault diagnosis unit derives an electric field distribution in the semiconductor device on the basis of the time-varying voltage signal to perform fault diagnosis on the semiconductor device.

Abstract: An apparatus that inspects wire breaking of a semiconductor integrated circuit includes a voltage applying device (12), a light pulse source (14), a scanning device (16), an electromagnetic wave detection device (18), and a wire breaking detection device (20). The voltage applying device (12) maintains a semiconductor integrated circuit in a state where a predetermined voltage is being applied thereto. The light pulse source (14) generates an ultrashort light pulse (2). The scanning device (16) two-dimensionally scans and irradiates the two-dimensional circuit of the semiconductor integrated circuit by using the ultrashort light pulse (2). The electromagnetic wave detection device (18) detects an electromagnetic wave (3) radiated from a position irradiated with the ultrashort light pulse on the semiconductor integrated circuit. The wire breaking detection device (20) detects wire breaking of the irradiated position based on presence and absence or intensity of the electromagnetic wave.

Abstract: An apparatus that inspects wire breaking of a semiconductor integrated circuit includes a voltage applying device (12), a light pulse source (14), a scanning device (16), an electromagnetic wave detection device (18), and a wire breaking detection device (20). The voltage applying device (12) maintains a semiconductor integrated circuit in a state where a predetermined voltage is being applied thereto. The light pulse source (14) generates an ultrashort light pulse (2). The scanning device (16) two-dimensionally scans and irradiates the two-dimensional circuit of the semiconductor integrated circuit by using the ultrashort light pulse (2). The electromagnetic wave detection device (18) detects an electromagnetic wave (3) radiated from a position irradiated with the ultrashort light pulse on the semiconductor integrated circuit. The wire breaking detection device (20) detects wire breaking of the irradiated position based on presence and absence or intensity of the electromagnetic wave.

Abstract: An etchant containing 1-hydroxy-ethane-1,1-diphosphonic acid is useful in etching Ba--Cu--O and Ca--Cu--O high-temperature superconductors.