Abstract: In a silicon carbide MOSFET, interface state generated at an interface between a silicon carbide layer and a gate insulating film cannot be reduced sufficiently, and mobility of a carrier is decreased. To solve this problem, a silicon carbide semiconductor device according to this invention includes a substrate introduction step of introducing a substrate, which includes a silicon carbide layer on which a gate insulating film is formed, in a furnace, and a heating step of heating the furnace having the substrate introduced therein while introducing nitrogen monoxide and nitrogen therein, wherein, in the heating step, nitrogen is reacted to nitride an interface between the gate insulating film and the silicon carbide layer.

Abstract: A plurality of pixel portions (12) are formed on a silicon substrate (11). A photoelectric converter portion (10) constituting each of the pixel portions (12) is electrically isolated by an element isolation portion (13) comprising an insulating film formed on the silicon substrate (11). The photoelectric converter portion (10) partitioned by the element isolation portion (13) is so formed that a crystal orientation of the sides in contact with the element isolation portion (13) corresponds to a <00-1> direction. This makes it possible to reduce dark current caused by stress in the vicinity of the interface of the element isolation portion (13) and maintain high sensitivity even if the pixel portions (12) are made smaller in size.

Abstract: A plurality of pixel portions (12) are formed on a silicon substrate (11). A photoelectric converter portion (10) constituting each of the pixel portions (12) is electrically isolated by an element isolation portion (13) comprising an insulating film formed on the silicon substrate (11). The photoelectric converter portion (10) partitioned by the element isolation portion (13) is so formed that a crystal orientation of the sides in contact with the element isolation portion (13) corresponds to a <00-1> direction. This makes it possible to reduce dark current caused by stress in the vicinity of the interface of the element isolation portion (13) and maintain high sensitivity even if the pixel portions (12) are made smaller in size.

Abstract: An insert molding die, an insert molding apparatus and an insert molding method are disclosed, wherein a pair of dies 10a, 10b are arranged in a manner capable of clamping, from axis X side, an insert part 2 arranged along axis X to be insert molded. The dies 10a, 10b include first separated dies 10a1, 10b1, second separated dies 10a2, 10b2 and third separated dies 10a3, 10b3 adapted to perform the clamp operation independently of each other.

Abstract: An insert component (2) is located at a predetermined position between a pair of halves of a mold (1) in an open state while being held by a support (12) for holding the insert component (2) outside the mold. A tubular molten resin (4) is extruded through a die (3) between the pair of halves of the mold (1) to dispose the insert component (2) in the interior space (13) of the molten resin (4). By clamping the mold (1), the insert component (2) is covered with the tubular molten resin (4) in conformity with the contour thereof to result in an insert-mold product (20).

Abstract: The semiconductor device fabrication method comprises the step of forming gate electrode 20 on a semiconductor substrate 10 with a gate insulation film 18 formed therebetween; the step of implanting dopants in the semiconductor substrate 10 with the gate electrode 20 as the mask to form dopant diffused regions 28, 36; the step of forming a silicon oxide film 38 on the semiconductor substrate 10, covering the gate electrodes 20; anisotropically etching the silicon oxide film 38 to form sidewall spacers 42 including the silicon oxide film 38 on the side walls of the gate electrode 20. In the step of forming a silicon oxide film 38, the silicon oxide film 38 is formed by thermal CVD at a 500-580° C. film forming temperature, using bis (tertiary-butylamino) silane and oxygen as raw materials.

Abstract: The semiconductor device fabrication method comprises the step of forming gate electrode 20 on a semiconductor substrate 10 with a gate insulation film 18 formed therebetween; the step of implanting dopants in the semiconductor substrate 10 with the gate electrode 20 as the mask to form dopant diffused regions 28, 36; the step of forming a silicon oxide film 38 on the semiconductor substrate 10, covering the gate electrodes 20; anisotropically etching the silicon oxide film 38 to form sidewall spacers 42 including the silicon oxide film 38 on the side walls of the gate electrode 20. In the step of forming a silicon oxide film 38, the silicon oxide film 38 is formed by thermal CVD at a 500–580° C. film forming temperature, using bis(tertiary-butylamino)silane and oxygen as raw materials.

Abstract: A rotation detecting device includes a housing that has an open end, a bottom end and an inside wall, and a rotation sensing unit disposed inside the housing. The rotation sensing unit includes an IC unit and a shape adjusting member that covers the IC unit. The shape adjusting member has an outer periphery fitted to the inside wall of the housing to hold the IC unit tight in the housing.

Abstract: An insert component (2) is located at a predetermined position between a pair of halves of a mold (1) in an open state while being held by a support (12) for holding the insert component (2) outside the mold. A tubular molten resin (4) is extruded through a die (3) between the pair of halves of the mold (1) to dispose the insert component (2) in the interior space (13) of the molten resin (4). By clamping the mold (1), the insert component (2) is covered with the tubular molten resin (4) in conformity with the contour thereof to result in an insert-mold product (20).

Abstract: The method for fabricating a semiconductor device including a step of forming a gate insulation film on a semiconductor substrate 10, the method further comprises, before the step of forming the gate insulation film, the step of forming an insulation film 12, covering a first side (upper side) and a second side (underside) of the semiconductor substrate 10, the step of etching off the insulation film 12 on the first side of the semiconductor substrate 10, and the step of annealing the semiconductor substrate 10 with the insulation film 12 present on the second side of the semiconductor substrate 10.

Abstract: The semiconductor device fabrication method comprises the step of forming gate electrode 20 on a semiconductor substrate 10 with a gate insulation film 18 formed therebetween; the step of implanting dopants in the semiconductor substrate 10 with the gate electrode 20 as the mask to form dopant diffused regions 28, 36; the step of forming a silicon oxide film 38 on the semiconductor substrate 10, covering the gate electrodes 20; anisotropically etching the silicon oxide film 38 to form sidewall spacers 42 including the silicon oxide film 38 on the side walls of the gate electrode 20. In the step of forming a silicon oxide film 38, the silicon oxide film 38 is formed by thermal CVD at a 500-580° C. film forming temperature, using bis(tertiary-butylamino)silane and oxygen as raw materials.

Abstract: The method for fabricating a semiconductor device including a step of forming a gate insulation film on a semiconductor substrate 10, the method further comprises, before the step of forming the gate insulation film, the step of forming an insulation film 12, covering a first side (upper side) and a second side (underside) of the semiconductor substrate 10, the step of etching off the insulation film 12 on the first side of the semiconductor substrate 10, and the step of annealing the semiconductor substrate 10 with the insulation film 12 present on the second side of the semiconductor substrate 10.