Abstract: A high toughness and high tensile strength thick steel plate has a plate thickness of 100 mm or more, wherein a reduction of area in a center of the plate thickness by tension in a plate thickness direction is 40% or more. Thus, a high tensile strength thick steel plate with excellent strength and toughness in a center of the plate thickness can be obtained with no need for a larger production line, even in the case of producing a high strength thick steel plate for which the addition amount of alloying element needs to be increased.

Abstract: A high toughness and high tensile strength thick steel plate has a plate thickness of 100 mm or more, wherein a reduction of area in a center of the plate thickness by tension in a plate thickness direction is 40% or more. Thus, a high tensile strength thick steel plate with excellent strength and toughness in a center of the plate thickness can be obtained with no need for a larger production line, even in the case of producing a high strength thick steel plate for which the addition amount of alloying element needs to be increased.

Abstract: Provided is a steel pipe for a linepipe having high compressive strength, a heavy wall thickness and sour gas resistance. The steel pipe has the composition which contains by mass % 0.02 to 0.06% C, 0.01 to 0.5% Si, 0.8 to 1.6% Mn, 0.012% or less P, 0.0015% or less S, 0.01 to 0.08% Al, 0.005 to 0.050% Nb, 0.005 to 0.025% Ti, 0.0005 to 0.0035% Ca, 0.0020 to 0.0060% N, and Fe and unavoidable impurities as a balance. The steel pipe has metal microstructure where a fraction of bainite is 80% or more, a fraction of M-A constituent is 2% or less and an average grain size of bainite is 5 ?m or less.

Abstract: Provided are a steel pipe for a linepipe with high compressive strength and a heavy wall thickness, and a method of manufacturing the same. Lowering of yield stress caused by a Bauschinger effect can be suppressed by optimizing the metal microstructure of a steel plate without requiring particular forming conditions in forming the steel pipe, and without requiring heat treatment after pipe making. A steel pipe has the composition which contains by mass % 0.03 to 0.10% C, 0.30% or less Si, 1.00 to 2.00% Mn, 0.015% or less P, 0.003% or less S, 0.080% or less Al, 0.005 to 0.035% Nb, 0.005 to 0.020% Ti, and Fe and unavoidable impurities as a balance. The steel pipe has metal microstructure where a fraction of bainite is 60% or more, a fraction of rolled ferrite is 5% or less, and a fraction of M-A constituent (MA) is 3% or less.

Abstract: Provided is a steel pipe for a linepipe having high compressive strength, a heavy wall thickness and sour gas resistance. The steel pipe has the composition which contains by mass % 0.02 to 0.06% C, 0.01 to 0.5% Si, 0.8 to 1.6% Mn, 0.012% or less P, 0.0015% or less S, 0.01 to 0.08% Al, 0.005 to 0.050% Nb, 0.005 to 0.025% Ti, 0.0005 to 0.0035% Ca, 0.0020 to 0.0060% N, and Fe and unavoidable impurities as a balance. The steel pipe has metal microstructure where a fraction of bainite is 80% or more, a fraction of M-A constituent is 2% or less and an average grain size of bainite is 5 ?m or less.

Abstract: Provided are a steel pipe for a linepipe having a heavy wall thickness and excellent fracture toughness in a base material, and methods of producing the same. A welded heat affected zone is achieved by suppressing lowering of yield stress caused by a Bauschinger effect by optimizing the metal microstructure of a steel plate. A steel pipe has a composition which contains by mass % 0.03 to 0.08% C, 0.10% or less Si, 1.00 to 2.00% Mn, 0.010% or less P, 0.0030% or less S, 0.06% or less Al, 0.005 to 0.020% Nb, 0.005 to 0.025% Ti, 0.0010 to 0.0060% N, and Fe and unavoidable impurities as a balance. Ti(%)/N(%) is a value which falls within a range of 2 to 4, and a Ceq value is 0.30 or more.

Abstract: Provided are a steel pipe for a linepipe with high compressive strength and a heavy wall thickness, and a method of manufacturing the same. Lowering of yield stress caused by a Bauschinger effect can be suppressed by optimizing the metal microstructure of a steel plate without requiring particular forming conditions in forming the steel pipe, and without requiring heat treatment after pipe making. A steel pipe has the composition which contains by mass % 0.03 to 0.10% C, 0.30% or less Si, 1.00 to 2.00% Mn, 0.015% or less P, 0.003% or less S, 0.080% or less Al, 0.005 to 0.035% Nb, 0.005 to 0.020% Ti, and Fe and unavoidable impurities as a balance. The steel pipe has metal microstructure where a fraction of bainite is 60% or more, a fraction of rolled ferrite is 5% or less, and a fraction of M-A constituent (MA) is 3% or less.

Abstract: In a frame buffer monitoring method and device, information concerning a received frame is extracted, and a monitoring frame added to a start of the frame is written in a FIFO buffer. When the monitoring frame is read from the FIFO buffer, expectation information is generated from the information concerning the frame added to the start of the monitoring frame read, the expectation information is compared with the information concerning the frame included in the frame within the monitoring frame read, and whether or not the expectation information is consistent with the information concerning the frame is determined. As a result of the comparison, when it is determined that the expectation information is not consistent with the information concerning the frame, e.g. bits of an FCS within the frame which is determined to be inconsistent are inverted to be transmitted to a subsequent stage as a discarded frame or the frame is discarded.

Abstract: In a more effective data generation method and circuit used for 64B/66B encoding, when packet data, and head and tail information of the data packet are received, write user data in which a head and tail identifying bytes are respectively added to a head and a tail of the packet data based on the head and tail information is associated with control data indicating positions of both of the identifying bytes to be written in a memory sequentially from a predetermined address of the memory. From the predetermined address, user data by 8 bytes and the control data corresponding to the user data are sequentially read to be provided to a 64B/66B encoding circuit.

Abstract: In a more effective data generation method and circuit used for 64B/66B encoding, when packet data, and head and tail information of the data packet are received, write user data in which a head and tail identifying bytes are respectively added to a head and a tail of the packet data based on the head and tail information is associated with control data indicating positions of both of the identifying bytes to be written in a memory sequentially from a predetermined address of the memory. From the predetermined address, user data by 8 bytes and the control data corresponding to the user data are sequentially read to be provided to a 64B/66B encoding circuit.

Abstract: In a frame buffer monitoring method and device, information concerning a received frame is extracted, and a monitoring frame added to a start of the frame is written in a FIFO buffer. When the monitoring frame is read from the FIFO buffer, expectation information is generated from the information concerning the frame added to the start of the monitoring frame read, the expectation information is compared with the information concerning the frame included in the frame within the monitoring frame read, and whether or not the expectation information is consistent with the information concerning the frame is determined. As a result of the comparison, when it is determined that the expectation information is not consistent with the information concerning the frame, e.g. bits of an FCS within the frame which is determined to be inconsistent are inverted to be transmitted to a subsequent stage as a discarded frame or the frame is discarded.

Abstract: This invention relates to a power transistor which includes a driving transistor and an output transistor in the Darlington connection. This invention has for its object to prevent the power transistor from being destroyed by a surge in such a way that a surge destruction-preventing Zener diode is connected between the base and the collector or the emitter of the power transistor. Especially, it is intended to dispose the Zener diode within a semiconductor substrate together with the power transistor. According to this invention, a p-n junction for the Zener diode is formed between a semiconductor region continuous to a collector region of the transistor and a semiconductor region continuous to a base region thereof. The p-n junction is surrounded by the base region of the transistor, whereby it is formed within a bulk and is prevented from reaching the surface of the semiconductor substrate.