Abstract: The present invention provides a novel cyanate ester compound which has excellent solvent solubility and from which a hardened product having a low coefficiency of thermal expansion and excellent flame retardancy and heat resistance is obtained. The present invention is a cyanate ester compound obtained by cyanating a naphthol-dihydroxynaphthalene aralkyl resin or a dihydroxynaphthalene aralkyl resin.

Abstract: The present invention is a cyanate ester compound represented by the following formula (1): wherein Ar represents an aromatic ring; R1 each independently represents a hydrogen atom, an alkyl group, or an aryl group; n each independently represents an integer of 1 to 3; m+n is the same as the total number of hydrogen atoms in a monovalent aromatic group containing the aromatic ring and the hydrogen atoms; R2 represents a hydrogen atom (excluding a case where Ar represents a benzene ring; n each represents 1; R1 represents a hydrogen atom; m each represents 4, and a cyanate group is bonded to the benzene ring in the 4-position relative to an adamantyl group), or an alkyl group having 1 to 4 carbon atoms; and R3 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms.

Abstract: A graphene wiring structure of an embodiment has a substrate, a metal part on the substrate, multilayered graphene connected to the metal part, a first insulative film on the substrate, and a second insulative film on the substrate. The metal part is present between the first insulative film and the second insulative film. Edges of the multilayered graphene are connected to the metal part. A side face of the first insulative film vertical to the substrate opposes a side face of the second insulative film vertical to the substrate. A first outer face of the multilayered graphene is in physical contact with a first side face of the first insulative film vertical to the substrate. A second outer face of the multilayered graphene is in physical contact with a second side face of the second insulative film vertical to the substrate.

Abstract: A graphene structure of an embodiment includes multilayer graphene laminated with graphene sheets, and a first interlayer material being present between the graphene sheets of the multilayer graphene and containing a multimer of molybdenum oxide.

Abstract: According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method includes forming a co-catalyst layer and catalyst layer above a surface of a semiconductor substrate. The co-catalyst layer and catalyst layer have fcc structure. The fcc structure is formed such that (111) face of the fcc structure is to be oriented parallel to the surface of the semiconductor substrate. The catalyst includes a portion which contacts the co-catalyst layer. The portion has the fcc structure. An exposed surface of the catalyst layer is planarized by oxidation and reduction treatments. A graphene layer is formed on the catalyst layer.

Abstract: Graphene wiring of an embodiment has a graphene intercalation compound including a multilayer graphene having graphene sheets stacked therein and an interlayer substance disposed between layers of the multilayer graphene, and an interlayer cross-linked layer connected to a side surface of the multilayer graphene. The interlayer cross-linked layer has a cross-linked molecular structure including multiple bonded molecules cross-linking the graphene sheets included in the multilayer graphene.

Abstract: A graphene wiring structure of an embodiment has a multilayered graphene having a plurality of planar graphene sheets laminated, and a first interlayer substance being a metal oxyhalide between the plurality of planar graphene sheets.

Abstract: According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method includes forming a co-catalyst layer and catalyst layer above a surface of a semiconductor substrate. The co-catalyst layer and catalyst layer have fcc structure. The fcc structure is formed such that (111) face of the fcc structure is to be oriented parallel to the surface of the semiconductor substrate. The catalyst includes a portion which contacts the co-catalyst layer. The portion has the fcc structure. An exposed surface of the catalyst layer is planarized by oxidation and reduction treatments. A graphene layer is formed on the catalyst layer.

Abstract: The present invention provides a cyanic acid ester compound having a structure represented by the following general formula (1): wherein n represents an integer of 1 or larger.

Abstract: A graphene wring structure of an embodiment includes multilayer graphene, a first interlayer compound existing in an interlayer space of the multilayer graphene, and a second interlayer compound existing in the interlayer space of the multilayer graphene. The second interlayer compound containing at least one of an oxide, a nitride and a carbide.

Abstract: A curable resin composition which can achieve a cured product in which the generation of cracks upon curing is suppressed and which has both a low thermal expansion rate and a low water absorbability is provided. The curable resin composition comprises: at least a cyanate ester compound (A) represented by the following formula (I); a metal complex catalyst (B); and an additive (C), wherein the additive (C) contains any one or more selected from the group consisting of a compound represented by the following general formula (II), a compound represented by the following general formula (III), and a tertiary amine.

Abstract: A nonvolatile storage device of an embodiment includes a first wiring layer extending in a first direction, a second wiring layer extending in a second direction intersecting with the first direction, a conductive layer between the first wiring layer and the second wiring layer at an intersection of the first wiring layer and the second wiring layer, and a resistance change region including at least one of an oxide, a nitride, and an oxynitride in the first wiring layer. The resistance change region exists in the first wiring layer including an interface between the first wiring layer and the conductive layer.

Abstract: A graphene wiring structure of an embodiment has a substrate, a metal part on the substrate, multilayered graphene connected to the metal part, a first insulative film on the substrate, and a second insulative film on the substrate. The metal part is present between the first insulative film and the second insulative film. Edges of the multilayered graphene are connected to the metal part. A side face of the first insulative film vertical to the substrate opposes a side face of the second insulative film vertical to the substrate. A first outer face of the multilayered graphene is in physical contact with a first side face of the first insulative film vertical to the substrate. A second outer face of the multilayered graphene is in physical contact with a second side face of the second insulative film vertical to the substrate.

Abstract: A method for efficiently producing a cyanogen halide with suppressed side effects, and a method for producing a high-purity cyanate ester compound at a high yield includes contacting a halogen molecule with an aqueous solution containing hydrogen cyanide and/or a metal cyanide, so that the hydrogen cyanide and/or the metal cyanide is allowed to react with the halogen molecule in the reaction solution to obtain the cyanogen halide, wherein more than 1 mole of the hydrogen cyanide or the metal cyanide is used based on 1 mole of the halogen molecule, and when an amount of substance of an unreacted hydrogen cyanide or an unreacted metal cyanide is defined as mole (A) and an amount of substance of the generated cyanogen halide is defined as mole (B), the reaction is terminated in a state in which (A):(A)+(B) is between 0.00009:1 and 0.2:1.

Abstract: A graphene wring structure of an embodiment includes multilayer graphene, a first interlayer compound existing in an interlayer space of the multilayer graphene, and a second interlayer compound existing in the interlayer space of the multilayer graphene. The second interlayer compound containing at least one of an oxide, a nitride and a carbide.

Abstract: There is provided a novel dicyanatophenyl-based difunctional cyanate ester which is in a liquid form at ordinary temperature and can obtain a cured product having an excellent low thermal expansion rate. There is disclosed a cyanate ester compound represented by the following formula (I): (wherein R1 represents a hydrocarbon group having 2 to 20 carbon atoms).

Abstract: According to one embodiment, a method of manufacturing a semiconductor device, the method includes forming a graphene film on a catalytic layer, removing a part of the graphene film to form an exposed side surface of the graphene film, introducing dopant into the graphene film from the exposed side surface, and forming a graphene interconnect by patterning the graphene film into which the dopant is introduced.

Abstract: The present invention is a cyanate ester compound represented by the following formula (1): wherein Ar represents an aromatic ring; R1 each independently represents a hydrogen atom, an alkyl group, or an aryl group; n each independently represents an integer of 1 to 3; m+n is the same as the total number of hydrogen atoms in a monovalent aromatic group containing the aromatic ring and the hydrogen atoms; R2 represents a hydrogen atom (excluding a case where Ar represents a benzene ring; n each represents 1; R1 represents a hydrogen atom; m each represents 4, and a cyanate group is bonded to the benzene ring in the 4-position relative to an adamantyl group), or an alkyl group having 1 to 4 carbon atoms; and R3 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms.

Abstract: According to one embodiment, a semiconductor device includes a metal interconnect and a graphene interconnect which are stacked to one another.

Abstract: A graphene wiring has a substrate, a catalyst layer on the substrate, a graphene layer on the catalyst layer, and a dopant layer on a side surface of the graphene layer. An atomic or molecular species is intercalated in the graphene layer or disposed on the graphene layer.