Abstract: The present invention is a metal paste for sealing comprising a metal powder and an organic solvent characterized in that the metal powder is one or more kinds of metal powders selected from a gold powder, a silver powder, a platinum powder and a palladium powder which has a purity of 99.9% by weight or more and an average particle size of 0.1 ?m to 1.0 ?m and that the metal powder is contained in a ratio of 85 to 93% by weight and the organic solvent is contained in a ratio of 5 to 15% by weight. As a sealing method using this metal paste, there is a method of applying and drying a metal paste, sintering it at 80 to 300° C. to form a metal powder sintered body and after that pressurizing the base member and the cap member while heating the metal powder sintered body.

Abstract: A two-layer structure bump including a first bump layer of a bulk body of a first conductive metal, which is any of gold, copper, and nickel, formed on a substrate and a second bump layer of a sintered body of a powder of a second conductive metal, which is any of gold and silver, formed on the first bump layer. The bulk body composing the first bump layer is formed through any of plating, sputtering, or CVD. The sintered body composing the second bump layer is formed by sintering the powder of the second conductive metal having a purity of not lower than 99.9 wt % and an average particle diameter of 0.005 ?m to 1.0 ?m. The second bump layer has a Young's modulus 0.1 to 0.4 times that of the first bump layer.

Abstract: The present invention provides a bonding method in which a bonded portion having a sufficient bonding strength can be obtained at a relatively low temperature, for example, in die bonding a semiconductor chip. A metal paste 20 was applied to a semiconductor chip 10, the metal paste 20 consisting of metal powder of one or more kinds selected from gold powder, silver powder, platinum powder, and palladium powder having a purity not lower than 99.9 wt % and an average particle diameter of 0.005 ?m to 1.0 ?m and an organic solvent. After being applied, the metal paste 20 was dried in a vacuum in a dryer. The chip was heated at 230° C. for 30 minutes to sinter the metal paste, by which a metal powder sintered compact 21 was formed. Next, a nickel plate 30 was placed on the semiconductor chip 10, and bonded to the semiconductor chip 10 by heating and pressurization.

Abstract: The present invention is a metal paste for sealing comprising a metal powder and an organic solvent characterized in that the metal powder is one or more kinds of metal powders selected from a gold powder, a silver powder, a platinum powder and a palladium powder which has a purity of 99.9% by weight or more and an average particle size of 0.1 ?m to 1.0 ?m and that the metal powder is contained in a ratio of 85 to 93% by weight and the organic solvent is contained in a ratio of 5 to 15% by weight. This metal paste preferably contains an additive such as a surfactant in accordance with the application method. As a sealing method using this metal paste, there is a method of applying and drying a metal paste, sintering it at 80 to 300° C. to form a metal powder sintered body and after that pressurizing the base member and the cap member while heating the metal powder sintered body.

Abstract: The present invention provides a bonding method in which a bonded portion having a sufficient bonding strength can be obtained at a relatively low temperature, for example, in die bonding a semiconductor chip. A metal paste 20 was applied to a semiconductor chip 10, the metal paste 20 consisting of metal powder of one or more kinds selected from gold powder, silver powder, platinum powder, and palladium powder having a purity not lower than 99.9 wt % and an average particle diameter of 0.005 ?m to 1.0 ?m and an organic solvent. After being applied, the metal paste 20 was dried in a vacuum in a dryer. The chip was heated at 230° C. for 30 minutes to sinter the metal paste, by which a metal powder sintered compact 21 was formed. Next, a nickel plate 30 was placed on the semiconductor chip 10, and bonded to the semiconductor chip 10 by heating and pressurization.

Abstract: A circuit board comprises wiring parts containing silver on a substrate, and a conductivity suppressing agent such as a potassium compound provided between the wiring parts, for preventing the silver attached on the substrate between the wiring parts from being conductive. Therefore, the insulation deterioration between the wiring parts can be suitably suppressed, which usually occurs when a voltage is applied between the wiring parts containing silver on the substrate under a high temperature atmosphere, irrespective of the presence or absence of water or water vapor. That is, the high temperature leakage phenomenon can be suitably suppressed.