Abstract: An etching agent which can etch insulating film with high speeds without damaging the resist pattern, provide realistic throughput when the insulting film etching process in the semiconductor manufacturing process is replaced with the single wafer processing etching treatment method, and prevent roughness on the surface of the semiconductor after etching.

Abstract: The present invention provides a micromachining surface treatment material for and a surface treatment method that suppress widening of the diameter of contact holes when removing a natural oxidation layer arising at bottom sections of the contact holes. The micromachining surface treatment material contains less than 0.1% hydrofluoric acid, and more than 40% by weight but less than or equal to 47% by weight of ammonium fluoride. Also, a surfactant is contained therein in an amount from 0.0001 to 0.1 % by weight.

Abstract: The present invention provides a micromachining surface treatment material for and a surface treatment method that suppress widening of the diameter of contact holes when removing a natural oxidation layer arising at bottom sections of the contact holes. The micromachining surface treatment material contains less than 0.1% hydrofluoric acid, and more than 40% by weight but less than or equal to 47% by weight of ammonium fluoride. Also, a surfactant is contained therein in an amount from 0.0001 to 0.1% by weight.

Abstract: An etching treatment agent which can etch insulating film with high speeds without damaging the resist pattern, provide realistic throughput when the insulting film etching process in the semiconductor manufacturing process is replaced with the single wafer processing etching treatment method, and prevent roughness on the surface of the semiconductor after etching.

Abstract: A stainless steel with a passive state fluorinated film formed thereon, which is easy to construct and does not produce particles even when it is welded, and a device using the same. The stainless steel does not cause leakage even when said film is formed on a sealing surface of a joint and a valve seat surface. The stainless steel is characterized in that at least a part of the surface coated with a passive state fluorinated film not thicker than 190Å consisting of a metal fluoride as a main component.

Abstract: A method is provided for fixing and eliminating fluorine and phosphorus in waste water wherein the waste water includes a fluorophosphate compound in which hydrochloric acid is added to the waste water including the fluorophosphate compound. The waste water to which hydrochloric acid has been added is heated in order to decompose the fluorophosphate compound into hydrogen fluoride and phosphoric acid, while hydrogen chloride gas located within a treating vessel in which the waste water is contained is introduced into a condenser provided outside of the treating vessel, and then a calcium salt is added to the waste water after decomposition in order to fix and eliminate fluorine and phosphorus.

Abstract: An etching treatment agent which can etch insulating film with high speeds without damaging the resist pattern, provide realistic throughput when the insulting film etching process in the semiconductor manufacturing process is replaced with the single wafer processing etching treatment method, and prevent roughness on the surface of the semiconductor after etching.

Abstract: A fine surface treatment for micromachining having an etching speed whose difference is smaller to oxide films each obtained by a different method as well as conditions of forming film or having different concentration of various impurities such as P, B and As in the film, and also having a practical etching speed to each of the films. The surface treatment for micromachining contains 0.1 to 8 weight percent of hydrogen fluoride and not less than 40 weight percent to not more than 47 weight percent of ammonium fluoride. It should be noted that it is preferable the surface treatment agent contains 0.001 to 1 weight percent of surfactant.

Abstract: An etching agent and an electronic device manufacturing method using the etching agent. The etching agent contains, in a solution, hydrofluoric acid at a concentration of 0.05 to 0.5 mol/l, and halooxoacid ions, represented by the formula (XO.sub.n).sup.p- (wherein X is a halogen element, n is 3, 4 or 6, p is 1, 2 or 3), at a concentration of at least 0.01 mol/l. An electronic device manufactured using the etching agent requires only a single etching step to etch both conductive layers (such as aluminum) as well as ohmic contact layers (a-Si).

Abstract: A fine positioning device such as a stage device for placing a probe or a sample thereon in a scanning tunneling microscope comprises a fixed member, a first structure spring stage having a first base member integral with the fixed member, a first moving member and a first resilient member for resiliently coupling the first base member and the first moving member such that they are displaceable relative to each other in a predetermined direction, a first actuator for displacing the first moving member relative to the base member in the predetermined direction, a second structure spring stage having a second base member integral with the first moving member, a second moving member and a second resilient member for resilient coupling the second base member and the second moving member such that they are displaceable relative to each other in a direction parallel to the predetermined direction, and a second actuator for displacing the second moving member relative to the second base member in the parallel direct