Patents by Inventor Masayuki Nakamoto

Masayuki Nakamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20030155859
    Abstract: A method of manufacturing a field emission device having emitter shapes, comprise the steps of forming a first original plate having a major surface provided with emitter shapes, by cutting a surface portion of a base material, forming a first material layer on the major surface of the first original plate on which the emitter shapes are provided; separating the first material layer from the first original plate, thereby obtaining a second original plate having recesses onto which the emitter shapes on the first original plate are transferred, forming a second material layer on a major surface of the second original plate on which the recesses are provided; and separating the second material layer from the second original plate, thereby to obtain a substrate having projections portions onto which shapes of the recesses of the second original plate are transferred.
    Type: Application
    Filed: February 27, 2003
    Publication date: August 21, 2003
    Inventors: Masayuki Nakamoto, Atsuo Inoue
  • Patent number: 6603256
    Abstract: There is provided a field emission type display which is capable of suppressing deterioration of image quality which otherwise occurs due to stepwise cuts and to the increase of wiring resistance caused by a thin width of a cathode line and which causes less failures. The display includes a plurality of cathode lines having an equal line width within the pixel and is structurally based on a multiple gradation representing a scheme of controlling spatial gradation display by changing the number of field emission type emitters to be driven by changing the number of cathode lines to be selected.
    Type: Grant
    Filed: March 15, 2000
    Date of Patent: August 5, 2003
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Goh Itoh, Haruhiko Okumura, Miki Mori, Yumi Fukuda, Hisao Fujiwara, Yujiro Hara, Hitoshi Kobayashi, Masahiko Yamamoto, Masayuki Saito, Masayuki Nakamoto
  • Patent number: 6417606
    Abstract: In a field emission cold-cathode device, a cathode line or electrode is arranged on a glass substrate. An emitter is arranged on the cathode electrode and is formed of a conductive layer, a low-work-function material layer, and a tip layer stacked one on top of the other in this order. The emitter has a pyramid shape in which the tip layer has a sharp tip. The low-work-function material layer is made of a material having a work function of 4.0 eV or less. The tip layer is made of a material having a negative electron affinity and formed of granular bodies or linear bodies each having a diameter of 100 nm or less.
    Type: Grant
    Filed: October 8, 1999
    Date of Patent: July 9, 2002
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masayuki Nakamoto, Katsuyoshi Fukuda
  • Publication number: 20020060514
    Abstract: A field emission cold cathode device of a lateral type includes a cathode electrode and gate electrode disposed on a major surface of a support substrate laterally side by side. The cathode electrode and gate electrode have side surfaces which oppose each other, and an emitter is disposed on the opposite side surface of the cathode electrode. The emitter includes a metal plating layer formed on the cathode electrode, and a plurality of granular or rod-shaped micro-bodies. The micro-bodies are consisting essentially of a material selected from the group consisting of fullerenes, carbon nanotubes, graphite, a material with a low work function, a material with a negative electron affinity, and a metal material, and are supported in the metal plating layer in a dispersed state.
    Type: Application
    Filed: November 16, 2001
    Publication date: May 23, 2002
    Inventor: Masayuki Nakamoto
  • Publication number: 20010025962
    Abstract: A field emission type cold cathode device comprises a substrate, and a metal plating layer formed on the substrate, the metal plating layer contains at least one carbon structure selected from a group of fullerenes and carbon nanotubes, the carbon structure is stuck out from the metal plating layer and a part of the carbon structure is buried in the metal plating layer.
    Type: Application
    Filed: March 19, 2001
    Publication date: October 4, 2001
    Inventor: Masayuki Nakamoto
  • Patent number: 6281621
    Abstract: A field emission cathode having an emitter provided with a sharp point for emission of electrons and a controlling gate electrode is composed of a supporting substrate, an emitter material layer formed of an emitter material, superposed on and attached fast to the supporting substrate, and provided with an emitter hole, an insulator layer so formed on the surface of the emitter material layer as to expose the tip part of the emitter projection therethrough, and an impurity diffusion layer formed on the surface of the insulator layer and enabled to function as an etching stopper layer.
    Type: Grant
    Filed: November 1, 1995
    Date of Patent: August 28, 2001
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masayuki Nakamoto, Tomio Ono, Tadashi Sakai
  • Patent number: 6097138
    Abstract: A field emission cold-cathode device includes a support member and a plurality of emitters formed on said support member to emit electrons. Each emitter is made up of a plurality of carbon nanotubes basically constituted by an array of 6-membered rings of carbon. 70% or more of all of the carbon nanotubes have diameters of 30 nm or less. An aspect ratio representing the ratio of the height to the bottom diameter of the carbon nanotube forming the emitter is set at from 3 to 1.times.10.sup.3. The period of the 6-membered rings of carbon in the carbon nanotube is a multiple of 0.426 nm or 0.738 nm.
    Type: Grant
    Filed: September 18, 1997
    Date of Patent: August 1, 2000
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Masayuki Nakamoto
  • Patent number: 6092889
    Abstract: An ink-jet head and its manufacturing method and an ink-jet recording device, which condense a color component in an ink with the color dissipated in a solvent, and record with the ink flown toward a record medium. A protruded-type electrode and its leading electrode are formed on a supporting substrate. An ink-guide-groove which is formed from the bottom section to the pointed end portion on the wall surface, is provided at the protruded-type electrode. A connected portion by the protruded-type electrode of the leading electrode and an end portion of an opposite portion are exposed outward. A plurality of protruded-type electrodes are provided on the supporting substrate along main scanning direction X. The shape of the protruded-type electrode is pyramid, and its pointed end portion is sharpened. Ink guide grooves are formed on each wall surface of the pyramid of the protruded-type electrode.
    Type: Grant
    Filed: September 13, 1996
    Date of Patent: July 25, 2000
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masayuki Nakamoto, Shuzo Hirahara, Teruo Murakami, Hitoshi Nagato, Hideyuki Nakao
  • Patent number: 6031328
    Abstract: Cathode electrodes in a plurality of rows are arranged parallel with one another on a glass substrate. Very small cold cathodes of conical shape are arranged in matrix on the cathode electrodes. An insulating layer (ITO film) having cylindrical slots surrounding cold cathodes is formed above the glass substrate and the cathode electrodes. Gate electrodes in a plurality of columns are formed on the insulating layer in the direction perpendicular to the extension of the cathode electrodes. An intersection between a cathode electrode and a gate electrode corresponds to a pixel. A glass plate is provided above the gate electrodes. An anode electrode is provided entirely on the surface of the glass plate facing the cold cathodes. A phosphor member for each pixel is formed on the surface of the anode electrode facing the cold cathodes. Thus, the light source for emitting light for each pixel is formed.
    Type: Grant
    Filed: September 18, 1997
    Date of Patent: February 29, 2000
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Masayuki Nakamoto
  • Patent number: 5977693
    Abstract: A micro-vacuum device comprises a substrates an emitter having a sharp end formed above the substrate, a gate electrode provided above the emitter, and an anode having cooling means provided oppositely to the substrate above the gate electrode.
    Type: Grant
    Filed: September 11, 1995
    Date of Patent: November 2, 1999
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masayuki Nakamoto, Hiromichi Ohashi
  • Patent number: 5962958
    Abstract: A field emission cold-cathode device has a supporting substrate, and an emitter for emitting electrons disposed on the supporting substrate. The supporting substrate is essentially formed of a transparent synthetic resin. The emitter is formed by molding a portion of a conductive material layer such as Au which has been disposed on the supporting substrate into a conical shape. The conductive material layer functions also as a cathode wiring. An engaging concave portion is formed on a surface of the emitter to be bonded with the supporting substrate. In conformity with this engaging concave portion, a convex portion is integrally formed on the supporting substrate so as to be hermetically fitted in the engaging concave portion.
    Type: Grant
    Filed: September 8, 1998
    Date of Patent: October 5, 1999
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Masayuki Nakamoto
  • Patent number: 5847496
    Abstract: A microelectronic field emission device includes a core layer (16) having at least one outward protuberance on a top surface of the core layer, and an emitter layer (15) formed on the core layer to cover at least a top portion of the outward protuberance, the material of the core layer having a larger electrical resistance than the material of the emitter layer, wherein the top portion of the outward protuberance culminates to a tip and a portion of the emitter layer (15) formed on the protuberance culminates to a tip. The microelectronic device may further include a substrate (19), a conductive layer (17), an anode electrode (53) including a phosphor layer, and a gate electrode (21) having an opening thereby exposing the tip of the emitter layer.
    Type: Grant
    Filed: August 5, 1997
    Date of Patent: December 8, 1998
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masayuki Nakamoto, Tomio Ono
  • Patent number: 5834324
    Abstract: A field emission cold-cathode device has a supporting substrate, and an emitter for emitting electrons disposed on the supporting substrate. The supporting substrate is essentially formed of a transparent synthetic resin. The emitter is formed by molding a portion of a conductive material layer such as Au which has been disposed on the supporting substrate into a conical shape. The conductive material layer functions also as a cathode wiring. An engaging concave portion is formed on a surface of the emitter to be bonded with the supporting substrate. In conformity with this engaging concave portion, a convex portion is integrally formed on the supporting substrate so as to be hermetically fitted in the engaging concave portion.
    Type: Grant
    Filed: September 18, 1997
    Date of Patent: November 10, 1998
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Masayuki Nakamoto
  • Patent number: 5808408
    Abstract: A plasma display has a plurality of discharge cells arranged in a matrix. The discharge cells are formed of an air-tight space sealed by a support substrate, a cathode electrode, and a glass substrate, and storing a discharge gas, e.g., He--Ne, Ne--Xe, He--Xe, or the like. The distance among the cells, i.e., the width of each partition wall formed of the substrate is set to about 0.1 .mu.m to 300 .mu.m. An emitter for emitting electrons, and a counter electrode are disposed in the cell. The counter electrode is disposed on the glass substrate to oppose the emitter. The distal end portion of the emitter is sharp to have a radius of curvature of about 1 .mu.m to 100 .mu.m at its distal end.
    Type: Grant
    Filed: February 26, 1997
    Date of Patent: September 15, 1998
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Masayuki Nakamoto
  • Patent number: 5786656
    Abstract: A field-emission cold-cathode device including a substrate, an emitter having a sharp distal, a gate electrode having a hole in a region of the distal end of the emitter, and a focusing electrode formed farther from the distal end of the emitter than the gate electrode in a region of an end portion near the emitter.
    Type: Grant
    Filed: September 5, 1996
    Date of Patent: July 28, 1998
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Toshimichi Hasegawa, Masayuki Nakamoto
  • Patent number: 5749762
    Abstract: A field emitter cold cathode has a substrate possessing a first main surface on one side of itself and a second main surface on the other side of itself and has windows formed in itself. An emitter layer is formed on the first main surface side of the substrate, and has emitters disposed at the positions of the windows. A gate electrode layer is formed on the second main surface side of the substrate. In addition, openings are so formed as to enclose untouched the periphery of at least the leading end part of the emitters.
    Type: Grant
    Filed: October 4, 1995
    Date of Patent: May 12, 1998
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masayuki Nakamoto, Tomio Ono
  • Patent number: 5747926
    Abstract: A ferroelectric cold cathode comprising a ferroelectric layer formed of a ferroelectric material and provided on its one surface with an emitter which is a projection having a sharp tip portion, a first electrode layer formed on one surface of the ferroelectric layer and having an opening allowing the sharp tip portion of the emitter to be exposed therethrough, and a second electrode layer formed on the other surface of the ferroelectric layer. When a voltage is applied between the first electrode and the second electrode, a dielectric polarization is reversed in the ferroelectric layer, resulting in the emission of electrons from the sharp tip portion of the emitter.
    Type: Grant
    Filed: March 8, 1996
    Date of Patent: May 5, 1998
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masayuki Nakamoto, Hiromichi Ohashi
  • Patent number: 5727976
    Abstract: In a method for producing a micro vacuum tube, a dent and an etching stopper layer are formed on one surface of a mold substrate. An emitter layer is deposited on the etching stopper layer and the mold substrate is removed so that the emitter layer has a protuberance covered with the etching stopper layer. Further, a gate electrode layer is formed on the etching stopper layer and the gate electrode layer and the etching stopper layer covering a tip of the protuberance is removed. An interposed insulator layer is formed on the gate electrode layer and the tip of the protuberance and an anode electrode layer is formed on the interposed insulator layer. The interposed insulator layer between the tip of the protuberance and the anode electrode layer is removed so that a space is formed between the tip and the anode electrode layer.
    Type: Grant
    Filed: March 14, 1995
    Date of Patent: March 17, 1998
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masayuki Nakamoto, Tomio Ono
  • Patent number: 5629782
    Abstract: A holographic display apparatus has a display section including a back plate, on which a cold cathode device of the field emission type having a great number of fine emitter electrodes is arranged. The display section includes a transparent and conductive front plate, on which a great number of anode electrodes, which define pixels, are arranged respectively opposite the emitter electrodes. The emitter electrodes are selected so as to emit electrons by an input signal prepared in accordance with the interference pattern of a holographic diffraction figure. The anode electrodes are excited and induced by electron rays from the emitter electrodes to change their reflection coefficient. The interference pattern is displayed on the basis of the change in the reflection coefficient of the anode electrodes.
    Type: Grant
    Filed: September 11, 1995
    Date of Patent: May 13, 1997
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kouichi Ichimura, Masayuki Nakamoto
  • Patent number: 5567882
    Abstract: The pressure sensor comprises an air-tight vacuum chamber consisting of a hollow cylinder and a pressure-reception diaphragm. The pressure-reception diaphragm is provided to face a space communicating with a space of an object to be measured. A field emission cold cathode device is provided on the inner surface of the pressure-reception diaphragm. The cold cathode device comprises a lot of emitter electrodes arranged in a matrix manner for emitting electrons, and gate electrodes for drawing out electrons. Two anode electrodes facing the cold cathode device are provided on the inner end surface of the cylinder. The anode electrodes are connected to a differential amplifier for amplifying a variation in output distribution between them.
    Type: Grant
    Filed: September 11, 1995
    Date of Patent: October 22, 1996
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kouichi Ichimura, Masayuki Nakamoto, Masao Obama, Hiroshi Masumoto