Abstract: Disclosed herein is a resist composition comprising in admixture (a) 100 parts by weight of an alkali-soluble phenolic resin, (b) 0.2-50 parts by weight of a compound which forms an acid upon exposure to active rays and consists of a specific halogen-containing aromatic compound, (c) 0.01-50 parts by weight of a compound which crosslinks the alkali-soluble phenolic resin in the presence of the acid formed from the compound (b), and (d) sufficient solvent to dissolve the foregoing composition components.

Abstract: A chemically amplified resist pattern is formed by applying chemically amplified resist, forming thereafter a layer of an amorphous polyolefines substance thereon, then exposing the chemically amplified resist, and furthermore, developing the chemically amplified resist after removing the amorphous polyolefines substance.

Abstract: A resist composition comprising in admixture (A) a compound which forms an acid upon exposure to active rays, (B) a polymer which has at least one structural unit with a group unstable to an acid and cleaves at this group in the presence of the acid derived from the compound (A) to turn alkali-soluble, and (C) a phenolic compound, and a process for forming a resist pattern using this resist composition are provided.

Abstract: Disclosed herein is a positive resist composition comprising an alkali-soluble phenolic resin and a photosensitive agent, characterized in that the positive resist composition contains, as the photosensitive agent, the quinonediazide sulfonate of at least one of phenolic compounds represented by the following general formulae (I) and (II): ##STR1## wherein R.sub.1 through R.sub.4 mean individually a hydrogen or halogen atom, a hydroxyl group, an alkyl or alkenyl group having 1-3 carbon atoms, or a hydroxyalkyl group having 1-3 carbon atoms and may be equal to or different from one another, and R.sub.5 denotes a hydrogen atom, an alkyl or alkenyl group having 1-3 carbon atoms, or an aryl group with the proviso that the number of hydroxyl groups is 3 or 4; and ##STR2## wherein R.sub.6 through R.sub.9 mean individually a hydrogen or halogen atom, an alkyl or alkenyl group having 1-3 carbon atoms, or a hydroxyalkyl group having 1-3 carbon atoms and may be equal to or different from one another, and R.sub.

Abstract: Disclosed herein is a positive resist composition comprising an alkali-soluble phenolic resin and a photosensitive agent, characterized in that the positive resist composition contains, as the photosensitive agent, the quinonediazide sulfonate of at least one of phenolic compounds represented by the following general formulae (I) and (II): ##STR1## wherein R.sub.1 through R.sub.4 mean individually a hydrogen or halogen atom, a hyaroxyl group, an alkyl or alkenyl group having 1-3 carbon atoms, or a hydroxyalkyl group having 1-3 carbon atoms and may be equal to or different from one another, and R.sub.5 denotes a hydrogen atom, an alkyl or alkenyl group having 1-3 carbon atoms, or an aryl group with the proviso that the number of hydroxyl groups is 3 or 4; and ##STR2## wherein R.sub.6 through R.sub.9 mean individually a hydrogen or halogen atom, an alkyl or alkenyl group having 1-3 carbon atoms, or a hydroxyalkyl group having 1-3 carbon atoms and may be equal to or different from one another, and R.sub.

Abstract: Disclosed herein is a positive resist composition comprising an alkali-soluble phenolic resin and the quinonediazide sulfonate of at least one phenolic compound selected from vinylphenol compounds and isopropenylphenol compounds as a photosensitive agent. It is suitable for use in minute processing.

Abstract: Disclosed herein is a positive resist composition comprising an alkali-soluble phenolic resin, a photosensitive agent formed of a quinonediazide sulfonic acid ester and at least one compound represented by the following general formula (I): ##STR1## wherein R.sup.1 through R.sup.6 mean individually a hydrogen or halogen atom, a hydroxyl group or an alkyl or alkenyl group having 1-4 carbon atoms and may be equal to or different from one another,R.sup.7 and R.sup.8 denote individually a hydrogen or halogen atom, or an alkyl group having 1-4 carbon atoms and may be equal to or different from each other, andR.sup.9 through R.sup.11 stand individually for a hydrogen atom or an alkyl group having 1-4 carbon atoms and may be equal to or different from one another. It is suitable for use in minute processing.

Abstract: A photoresist composition comprising a conjugated diene polymer or its cyclized product, a photocuring agent soluble in an organic solvent and a pyrazole compound having a skeleton represented by the following formula. ##STR1## Also provided is a method of forming a photoresist pattern using the aforesaid composition.