Abstract: A chemical solution feeder feeds a chemical solution to a predeteimined feed target, and includes: a feed flow path that is connected at its one end to a supply source of a chemical solution at room temperature and at its other end to a feed target, to guide the chemical solution to the feed target from the supply source; a first filter that removes particles in a chemical solution at room temperature injected from the supply source into the feed flow path; a heating unit that heats the chemical solution having passed through the first filter; and a second filter that removes particles in the chemical solution at high temperature heated by the heating unit, flowing through the feed flow path toward the feed target, wherein the first filter is a hydrophilic filter and the second filter is a hydrophobic filter.

Abstract: A substrate processing method includes a first discharge step of discharging, from the first discharge port which faces a predetermined first region including the rotating center of the upper surface, a low surface tension liquid containing gas containing steam of a low surface tension liquid having a larger specific gravity than air and lower surface tension than the processing liquid and not discharging the low surface tension liquid containing gas from the second discharge port which faces a predetermined second region surrounding the outside of the first region on the upper surface of the substrate, and a second discharge step of discharging the low surface tension liquid containing gas from the second discharge port after the first discharge step and not discharging the low surface tension liquid containing gas from the first discharge port.

Abstract: A substrate processing method including a vapor atmosphere filling step in which a vapor atmosphere which contains vapor of a low surface tension liquid whose lower surface tension than a processing liquid is filled around a liquid film of the processing liquid, a thin film region forming step in which, in parallel with the vapor atmosphere filling step, a substrate is rotated at a predetermined thin film region forming speed, to partially remove the processing liquid, thereby forming a thin film region on the liquid film of the processing liquid, a thin film region expanding step in which, in parallel with the vapor atmosphere filling step, the thin film region is expanded to an outer circumference of the substrate, and a thin film removing step in which the thin film is removed from the upper surface after the thin film region expanding step.

Abstract: A substrate processing method includes a liquid film forming step of forming a liquid film of an organic solvent with which a whole area of an upper surface of a substrate is covered in order to replace a processing liquid existing on the upper surface with an organic solvent liquid, a thin film holding step of thinning the liquid film of the organic solvent by rotating the substrate at a first high rotational speed while keeping surroundings of the whole area of the upper surface in an atmosphere of an organic solvent vapor and holding a resulting thin film of the organic solvent on the upper surface, and a thin-film removing step of removing the thin film from the upper surface after the thin film holding step, and the thin-film removing step includes a high-speed rotation step of rotating the substrate at a second high rotational speed.

Abstract: A substrate processing method includes a vapor atmosphere filling step of filling surroundings of a liquid film of a processing liquid with a vapor atmosphere containing a vapor of a low surface tension liquid that has a lower surface tension than the processing liquid, a dry region forming step of forming a dry region in the liquid film of the processing liquid by partially excluding the processing liquid while spraying a gas containing the vapor of the low surface tension liquid onto the liquid film of the processing liquid in parallel with the vapor atmosphere filling step, and a dry region expanding step of expanding the dry region toward an outer periphery of a substrate while rotating the substrate in parallel with the vapor atmosphere filling step.

Abstract: This substrate processing method is a substrate processing method that processes a front surface of a substrate with using a processing liquid, including a mixture replacing step of replacing the processing liquid attached to the front surface of the substrate with a mixture of a first liquid and a second liquid having a higher boiling point than that of the first liquid and a lower surface tension than that of the first liquid, and a mixture removing step of removing the mixture from the front surface of the substrate after the mixture replacing step.

Abstract: In a substrate processing method, a liquid film 30 of a processing liquid is formed on an upper surface of a substrate W, a gas which comprising vapor of a low surface tension liquid is sprayed to the liquid film 30 to form a liquid film-removed region 31. The liquid film-removed region 31 is expanded. A coolant 29 is supplied to a lower surface of the substrate W, while the liquid film 30 is cooled to a temperature lower than the boiling point of the low surface tension liquid, a heated gas is sprayed to selectively remove the coolant 29, and a range 33 in which the coolant 29 is removed is heated by a heated gas, by which the liquid film-removed region 31 on the upper surface of the substrate W is selectively heated to a temperature not less than the boiling point of the low surface tension liquid, and also a range which heats the liquid film-removed region 31 is expanded in synchronization with expansion of the liquid film-removed region 31.

Abstract: A substrate processing method includes a substrate holding step of horizontally holding a substrate, a liquid film forming step of supplying a processing liquid onto the upper surface of the substrate to form a liquid film of the processing liquid covering the upper surface of the substrate, a liquid film-removed region-forming step of partially eliminating the processing liquid from the liquid film of the processing liquid to form a liquid film-removed region in the liquid film of the processing liquid, a liquid film-removed region enlarging step of enlarging the liquid film-removed region toward the outer periphery of the substrate, and a hydrogen fluoride atmosphere-holding step of keeping the ambient atmosphere at the boundary between the liquid film-removed region and the liquid film of the processing liquid as an atmosphere of hydrogen fluoride-containing vapor, in parallel with the liquid film-removed region enlarging step.

Abstract: A second liquid film of the second processing liquid covers an upper surface of the first liquid film of the first processing liquid, on the upper surface of the substrate. In the substrate processing apparatus, extraneous matters on the upper surface of the substrate are removed from the upper surface of the substrate and moved toward the inside of the second liquid film by the first processing liquid which is vaporized between the second liquid film and the substrate by performing heating of the first liquid film at a temperature not lower than the boiling point of the first processing liquid and lower than the boiling point of the second processing liquid. It is thereby possible to suitably remove the extraneous matters from the substrate while suppressing any damage on the upper surface of the substrate.

Abstract: A substrate processing device includes a control device that controls a substrate holding unit, an etching liquid supply unit, and a plurality of electrodes. The control device performs an etching step for supplying an etching liquid to a substrate, while rotating the substrate about a rotation axis line; and in parallel with the etching step, an etching electrostatically charging step for electrostatically charging the substrate by applying voltages to the electrodes such that the absolute value of the voltage to be applied to the first electrode and the absolute value of the voltage to be applied to the second electrode are increased in this order.

Abstract: A substrate processing apparatus includes a substrate holding unit that holds a substrate horizontally while rotating the substrate around a vertical rotational axis running through its center portion, an opposed member having an opposed surface that is opposed to an upper surface of the substrate, and a processing liquid discharge unit that includes a center portion discharge port on the opposed surface, that opens being opposed to the upper surface center portion of the substrate, and a peripheral portion discharge port on the opposed surface, that opens being opposed to the upper surface peripheral portion of the substrate, that discharges a processing liquid from the center portion discharge port to supply the processing liquid between the substrate and the opposed surface, and discharges the processing liquid from the peripheral portion discharge port to replenish the processing liquid between the substrate and the opposed surface.

Abstract: A substrate processing method includes a liquid film forming step of forming a liquid film of an organic solvent with which a whole area of an upper surface of a substrate is covered in order to replace a processing liquid existing on the upper surface with an organic solvent liquid, a thin film holding step of thinning the liquid film of the organic solvent by rotating the substrate at a first high rotational speed while keeping surroundings of the whole area of the upper surface in an atmosphere of an organic solvent vapor and holding a resulting thin film of the organic solvent on the upper surface, and a thin-film removing step of removing the thin film from the upper surface after the thin film holding step, and the thin-film removing step includes a high-speed rotation step of rotating the substrate at a second high rotational speed.

Abstract: A hydrophobizing agent vapor is supplied to a substrate and a surface of the substrate including a pattern is hydrophobized. Thereafter, the substrate is dried by vaporizing the hydrophobizing agent. The substrate to be processed is maintained in a state of not contacting water until it is dried after being hydrophobized. Collapse of a pattern formed on the substrate surface is thereby suppressed or prevented.

Abstract: A hydrophobizing agent vapor is supplied to a substrate and a surface of the substrate including a pattern is hydrophobized. Thereafter, the substrate is dried by vaporizing the hydrophobizing agent. The substrate to be processed is maintained in a state of not contacting water until it is dried after being hydrophobized. Collapse of a pattern formed on the substrate surface is thereby suppressed or prevented.

Abstract: A hydrophobizing agent is supplied to a substrate and a surface of the substrate is hydrophobized. Thereafter, the substrate is dried. The substrate to be processed is maintained in a state of not contacting water until it is dried after being hydrophobized. Collapse of a pattern formed on the substrate surface is thereby suppressed or prevented.

Abstract: A hydrophobizing agent is supplied to a substrate and a surface of the substrate is hydrophobized. Thereafter, the substrate is dried. The substrate to be processed is maintained in a state of not contacting water until it is dried after being hydrophobized. Collapse of a pattern formed on the substrate surface is thereby suppressed or prevented.

Abstract: A liquid hydrophobizing agent is supplied to a substrate and a surface of the substrate is hydrophobized. A solvent, lower in surface tension than water and capable of dissolving the hydrophobizing agent, is supplied to the substrate in a pre-drying rinsing step. Thereafter, the substrate is dried. The substrate to be processed is maintained in a state of not contacting water until it is dried after being hydrophobized.

Abstract: A substrate processing method includes a removing step of removing unwanted matter from a substrate and a vaporizing step performed in parallel to the removing step. In the removing step, an HF vapor that contains hydrogen fluoride and a solvent vapor that contains a solvent capable of dissolving water and having a lower boiling point than water is supplied onto the substrate to etch and remove the unwanted matter. In the vaporizing step, the solvent on the substrate is vaporized.

Abstract: A hydrophobizing agent is supplied to a substrate and a surface of the substrate is hydrophobized. Thereafter, the substrate is dried. The substrate to be processed is maintained in a state of not contacting water until it is dried after being hydrophobized. Collapse of a pattern formed on the substrate surface is thereby suppressed or prevented.