Patents by Inventor Masayuki Sakakibara

Masayuki Sakakibara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240168253
    Abstract: A lens barrel 10 comprises a fourth lens group unit 20, cam pins 22a and 22b, a biasing pin 23, a cutout portion C1, a substantially cylindrical first lens group unit 13, and a plurality of rectilinear guide portions 25. The fourth lens group unit 20 has a substantially cylindrical main body portion 21 that holds a lens L4a, etc. The cam pins 22a and 22b are provided to the fourth lens group unit 20, protrude in the radial direction, and engage in the cam grooves 14b of the cam frame 14. The biasing pin 23 is provided to the fourth lens group unit 20, is supported so as to bias in the radial direction, and engages in the cam groove 14b. The cutout portion C1 is formed by cutting out the portion of the main body portion 21 of the fourth lens group unit 20 opposite the biasing pin 23 in the direction of the optical axis. The main body portion 21 of the fourth lens group unit 20 is provided continuously in the circumferential direction, from the biasing pin 23 to the cam pins 22a and 22b.
    Type: Application
    Filed: November 9, 2023
    Publication date: May 23, 2024
    Applicant: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Yuichiro KIMOTO, Tetsuya MORITA, Masayuki SHODAI, Naoki YOSHIKAWA, Takeshi SAKAKIBARA
  • Patent number: 7405873
    Abstract: A UV-bandpass filter for transmitting therethrough light having a wavelength included in a UV-region. The bandpass filter is an optical filter including a thin silver film; wherein the thin silver film includes an entrance face and an exit face opposing the entrance face, for emitting light having a wavelength included in a specific UV-region whose wavelength ranges from 250 nm to 400 nm in the light having reached the entrance face, and has such a thickness as to yield a transmittance of 10% or less with respect to light having a wavelength excluding the specific UV-region.
    Type: Grant
    Filed: June 20, 2002
    Date of Patent: July 29, 2008
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Masayuki Sakakibara, Masaru Morishita
  • Publication number: 20070284714
    Abstract: An electronic component is provided with a base member 1 having a through hole 41 (43) extending from a bottom surface of a recess 15 to a back surface 11back, an electronic element 4 mounted in the recess 15, a lid member 2 closing an aperture of the recess 15, and an adhesive 3 (42) interposed between the lid member 2 and an opening end face of the recess 15, and obstructing the through hole 41 (43) to keep an interior space of the recess in a hermetically-sealed state; the adhesive 3 (42) obstructs a space between the lid member 2 and the base member 1, and the adhesive 3 (42) finally also obstructs the through hole 41 (43) extending from the bottom surface of the recess 15 to the back surface 11back so as to allow air, which could inhibit the obstruction, to escape during production.
    Type: Application
    Filed: May 2, 2005
    Publication date: December 13, 2007
    Inventors: Masayuki Sakakibara, Masaru Morishita
  • Patent number: 7098081
    Abstract: Cut faces 15a to 15h are formed on the front end faces 13a to 13h of the exposed portions 12a to 12h of respective lead terminals 11a to 11h of a semiconductor device 100, and plating for increasing the solderability is provided on the cut faces 15a to 15h.
    Type: Grant
    Filed: September 27, 2002
    Date of Patent: August 29, 2006
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Masayuki Sakakibara, Masaru Morishita
  • Publication number: 20050063045
    Abstract: The present invention relates to a UV-bandpass filter for transmitting therethrough light having a wavelength included in a UV-region, and the like. The bandpass filter is an optical filter including a thin silver film; whereas the thin silver film comprises an entrance face and an exit face opposing the entrance face, for emitting light having a wavelength included in a specific UV-region whose wavelength ranges from 250 nm to 400 nm in the light having reached the entrance face, and has such a thickness as to yield a transmittance of 10% or less with respect to light having a wavelength excluding the specific UV-region.
    Type: Application
    Filed: June 20, 2002
    Publication date: March 24, 2005
    Inventors: Masayuki Sakakibara, Masaru Morishita
  • Publication number: 20050003582
    Abstract: Cut faces 15a to 15h are formed on the front end faces 13a to 13h of the exposed portions 12a to 12h of respective lead terminals 11a to 11h of a semiconductor device 100, and plating for increasing the solderability is provided on the cut faces 15a to 15h.
    Type: Application
    Filed: September 27, 2002
    Publication date: January 6, 2005
    Inventors: Masayuki Sakakibara, Masaru Morishita
  • Patent number: 6573488
    Abstract: A plurality of resistive regions constituting a resistive region gradually increase in width from one end to the other end and have substantially the same resistivity. If, therefore, this semiconductor position sensitive detector is placed such that charges generated in accordance with incident light from an object at a long distance flow into narrow resistive regions, since the narrow resistive regions have high resistances, the output currents from the two ends of the resistive region greatly change to improve the position detection precision even in a case wherein the incident light position only slightly moves on the surface as the distance to the object changes.
    Type: Grant
    Filed: October 24, 2000
    Date of Patent: June 3, 2003
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Tatsuo Takeshita, Masayuki Sakakibara
  • Patent number: 6529281
    Abstract: In an apparatus a photosensitve surface of PSD is provided with a conductive trunk region extending in a base line direction and a plurality of conductive branch regions arranged in the base line direction and each connected to the trunk region, and each branch region makes an angle of 45° to the base line direction. An LED is arranged to be able to project slit light extending at the angle of 45° to the base line direction.
    Type: Grant
    Filed: June 27, 2001
    Date of Patent: March 4, 2003
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Tatsuo Takeshita, Masayuki Sakakibara
  • Patent number: 6459109
    Abstract: A semiconductor position sensor functions as a PSD or as a two-part split PD or the like, based on control of disconnection/connection of basic, electroconductive strips by controlling a voltage of gate electrode. This semiconductor position sensor does not require a PD separate from the PSD, whereby the device itself can be constructed in compact size. Further, since all signal light can impinge on a photosensitive area, detection sensitivity can be improved.
    Type: Grant
    Filed: December 28, 2000
    Date of Patent: October 1, 2002
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Tatsuo Takeshita, Masayuki Sakakibara, Kouji Noda
  • Publication number: 20010043337
    Abstract: In an apparatus a photosensitve surface of PSD is provided with a conductive trunk region extending in a base line direction and a plurality of conductive branch regions arranged in the base line direction and each connected to the trunk region, and each branch region makes an angle of 45° to the base line direction. An LED is arranged to be able to project slit light extending at the angle of 45° to the base line direction.
    Type: Application
    Filed: June 27, 2001
    Publication date: November 22, 2001
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Tatsuo Takeshita, Masayuki Sakakibara
  • Publication number: 20010001499
    Abstract: A semiconductor position sensor functions as a PSD or as a two-part split PD or the like, based on control of disconnection/connection of basic, electroconductive strips by controlling a voltage of gate electrode. This semiconductor position sensor does not require a PD separate from the PSD, whereby the device itself can be constructed in compact size. Further, since all signal light can impinge on a photosensitive area, detection sensitivity can be improved.
    Type: Application
    Filed: December 28, 2000
    Publication date: May 24, 2001
    Applicant: Hamamatsu Photonics K.K.
    Inventors: Tatsuo Takeshita, Masayuki Sakakibara, Kouji Noda
  • Patent number: 4833156
    Abstract: A use of the pyrrolidone derivative represented by the following formula [I] as an anti-amnesitc agent: ##STR1## wherein R represents a group ##STR2## X represents --SO.sub.2 -- or --CO--; R' represents a hydrogen atom, a lower alkyl group, a trifluoromethyl group, a halogen atom or a nitro group; n denotes an integer of 1-5; and, when n is an integer of 2 or more, R' may be the same or different, provided that(a) when X is --SO.sub.2 --, there is no case where R' is 3-CF.sub.3, 4-Cl-5-CF.sub.3, 3,5-(CF.sub.3).sub.2 or 3-NO.sub.2 ;(b) when X is --CO--, there is no case where n denotes 1 or 2 and R' is a halogen atom or a nitro group;(c) when X is --SO.sub.2 --, there is no case where n denotes 1 or 2 and R' is a group other than 4-Cl or 3-NO.sub.2 ; and(d) when n denotes 2, there is no case where the groups R' represent the same group which is halogen atom or a nitro group.
    Type: Grant
    Filed: February 26, 1988
    Date of Patent: May 23, 1989
    Assignee: Kirin Beer Kabushiki Kaisha
    Inventors: Masayuki Sakakibara, Yuzi Munezuka, Shinichiro Kato
  • Patent number: 4803301
    Abstract: There is provided a process for producing an optically active 2-phenoxypropionic acid, which comprises allowing an optically active lactic ester represented by the following formula (I) to react with a phenol represented by the following formula (II) in the copresence of a reagent A and a reagent B defined below to form an optically active 2-phenoxypropionic ester represented by the following formula (III), and liberating an optically active 2-phenoxypropionic acid represented by the following formula (IV) from the optically active 2-phenoxypropionic ester: ##STR1## wherein R.sup.1 represents a group to form a monovalent ester, which can be eliminated from the compound (III) under weakly basic to acidic conditions and R.sup.
    Type: Grant
    Filed: April 13, 1988
    Date of Patent: February 7, 1989
    Assignee: Kirin Beer Kabushiki Kaisha
    Inventors: Masayuki Sakakibara, Yasushi Nii
  • Patent number: 4604240
    Abstract: 22R,23R-Homobrassinolide of the formula: ##STR1## which is useful as a plant growth regulator.
    Type: Grant
    Filed: December 11, 1984
    Date of Patent: August 5, 1986
    Assignee: Sumitomo Chemical Company, Limited
    Inventors: Kenji Mori, Tetsuo Takematsu, Masayuki Sakakibara, Hiromichi Oshio