Abstract: A semiconductor memory device includes a channel layer and a gate electrode. A first insulating layer is between the semiconductor layer and the gate electrode. A second insulating layer is between the first insulating layer and the gate electrode. A storage region is between the first insulating layer and the second insulating layer. The storage region comprises metal or semiconductor material. A coating layer comprises silicon and nitrogen and surrounds the storage region. The coating layer is between the storage region and the second insulating layer and between the storage region and the first insulating layer.

Abstract: A semiconductor device comprises a substrate. A plurality of electrode layers and a plurality of insulating layers are formed in an alternating stack above the substrate. A semiconductor column extends through the plurality of electrode layers and the plurality of insulating layers. The semiconductor column comprises a single-crystal semiconductor material on an outer peripheral surface facing the electrode and insulating layers. First insulating films are formed between the semiconductor column and the electrode layers. The first insulating films are spaced from each other along the column length. Each first insulating film corresponds to one electrode layer. A charge storage layer is between each of the first insulating films and the electrode layers. A second insulating film is between the charge storage layer and each of the electrode layers.

Abstract: According to an embodiment, a manufacturing method of a semiconductor device includes: carrying a substrate alternately stacked an electrode layer and an insulation layer into a chamber; increasing the temperature in the chamber to a predetermined temperature; and supplying hydrogen and material gas including metal simultaneously into the chamber, and supplying oxidizing gas the partial pressure ratio of which to the hydrogen is set so as to provide an atmosphere of reducing the electrode layer, by using an ALD method, and thereby forming, on a surface of the electrode layer and a surface of the insulation layer, a metal oxide layer obtained by oxidizing the metal.

Abstract: The present invention enables a high-quality filtered image to be generated even from multi modal and multispectral images containing positional deviations. An image perturbation part generates a perturbed guide image group comprising first to K-th perturbed guide images obtained by deforming a guide image. A filtering part generates a filtered image group comprising first to K-th filtered images by applying first to K-th filtering processing to a target image by using the perturbed guide image group. A reliability calculation part calculates a reliability group comprising first to K-th reliabilities for the first to K-th filtered images of the filtered image group on the basis of first to K-th correlation values between the first to K-th perturbed guide images and the target image. A weight optimization part generates, on the basis of the first to K-th reliabilities, a weight group comprising first to K-th weights to be respectively used when compositing the first to K-th filtered images.

Abstract: A film forming apparatus for forming a film on a substrate by transferring a source gas generated from a low-vapor-pressure source to a process container by a carrier gas includes: a source container configured to receive and heat the low-vapor-pressure source; a first gas pipe configured to supply the carrier gas to the source container; a second gas pipe connecting the source container and the process container; a first opening and closing valve provided in the second gas pipe; and a measurement part configured to measure a flow rate of the source gas flowing through the second gas pipe, wherein the second gas pipe is disposed on a central axis of the process container, and wherein the source container is offset with respect to the central axis of the process container.

Abstract: The present disclosure relates to a transmission device and a transmission method, a reception device and a reception method, and a program that enable acquisition of accurate location information in an indoor environment. A reception device includes: an intra-body communication reception unit that receives location identification information from another device by a communication method using the human body as the communication medium, the location identification information being for identifying the location of the reception device; a location recognition unit that recognizes the current location of the reception device in accordance with the received location identification information; and a storage unit that stores the recognized current location. The present disclosure can be applied to transmission/reception devices and the like that perform communication by a communication method using the human body as the communication medium.

Abstract: A flow channel structure includes a member including a flow channel. The flow channel includes a first part, second parts, and connections. The first part extends in a first direction. The connections connect the first part and the second parts. The connections include a first bend and a second bend. The first bend arcuately extends with a first curvature and a central angle of greater than 90 degrees. The first bend has a first end connected to the second parts, and a second end. The second bend arcuately extends with a second curvature. The second bend has a third end connected to the second end. A tangent to the first end extends in a same direction as the second parts extend. A tangent to the second end is equal to a tangent to the third end.

Abstract: In one embodiment, a semiconductor storage device includes a first interconnect extending in a first direction, a plurality of second interconnects extending in a second direction different from the first direction, and a plurality of first insulators provided alternately with the second interconnects. The device further includes a resistance change film provided between the first interconnect and at least one of the second interconnects and including a first metal layer or a first semiconductor layer that includes a first face provided on a first interconnect side and a second face provided on a second interconnect side, at least any of the first face and the second face having a curved plane shape.

Abstract: A protector protects a high-pressure fuel pump of an internal combustion engine. The protector and the high-pressure fuel pump are fastened to an engine body by a bolt inserted through a metal collar. The protector further includes an elastic insulating layer located between the collar and a carbon fiber reinforced plastic portion. The collar is embedded in the carbon fiber reinforced plastic portion with the insulating layer compressed.

Abstract: A fluid passage structure includes a housing and first wall portions. The housing includes an outer surface located at an end of a first direction and two passages separated from each other provided inside. Each of two passages includes at least one fluid chamber, openings that open to the outer surface, and branch paths that is coupled to the fluid chamber. The fluid chambers of the two passages are arranged alternately in the first direction. The branch paths include at least one of: branch paths that couple at least one of the openings with one fluid chamber; and branch paths that couple one fluid chamber with another fluid chamber. The first wall portions are provided in the housing, face the fluid chamber, and are arranged in the first direction via the fluid chamber.

Abstract: A semiconductor memory device includes a plurality of first interconnections extending in a first direction, and a second interconnection extending in a second direction different from the first direction. The device further includes a resistance change film provided between the plurality of first interconnections and the second interconnection, the resistance change film including (a) silicon and a semiconductor layer including one or more elements selected from among oxygen, carbon, nitrogen, phosphorus, boron, and germanium, or (b) a first layer containing the germanium and a second layer containing the silicon.

Abstract: A fuel pipe includes a tubular header pipe and a socket coupled to the header pipe and supplied with fuel from the header pipe. The header pipe and the socket form a joining portion therebetween. The joining portion is shaped to be elongated in a first direction. The joining portion includes a communication hole that connects an inner region of the header pipe and an inner region of the socket. The communication hole is an elongated hole elongated in the first direction.

Abstract: According to one embodiment, a gas supply pipe has a first gas pipe configured to blow a gas which has flowed from an inflow opening via first gas blow holes arranged along a longitudinal direction, and a second gas pipe provided in parallel with the first gas pipe. The second gas pipe has second gas blow holes arranged along the longitudinal direction, and allows the gas to flow in a direction opposite to the first gas pipe.

Abstract: The image data display system according to the present invention makes it possible to comprehend a global distribution of measurement values and a change in details of the measurement values simultaneously. In the present invention, a color information conversion unit converts the measurement values to color information for representing the global distribution of the measurement values. A detail extraction unit extracts detail information of the measurement values from the measurement values. A detail adjustment unit adjusts the strength of detail information and generates adjusted detail information. A color information adding unit adds color information on the basis of the adjusted detail information.

Abstract: Producing a feed additive composition for ruminants having a particle size of not less than 0.5 mm and not more than 2 mm, by granulating, in water, a molten mixture containing (A) at least one component selected from a hydrogenated vegetable oil and a hydrogenated animal oil each having a melting point of higher than 50° C. and lower than 90° C., (B) lecithin, and (C) at least one biologically active substance having solubility of not less than 0.001 g and not more than 60 g in 100 g of water at 20° C. affords a feed additive composition provided with high protection in rumen, and which is superior in dissolution in the lower gastrointestinal tract.

Abstract: In a semiconductor laser according to an embodiment of the present disclosure, a ridge part has a structure in which a plurality of gain regions and a plurality of Q-switch regions are each disposed alternately with each of separation regions being interposed therebetween in an extending direction of the ridge part. The separation regions each have a separation groove that separates from each other, by a space, the gain region and the Q-switch region adjacent to each other. The separation groove has a bottom surface at a position, in a second semiconductor layer, higher than a part corresponding to a foot of each of both sides of the ridge part.

Abstract: An optical element includes first and second optical portions, and a first connection region. The first optical portion has first and second surfaces opposed each other. The first optical portion is light transmissive. The second optical portion has a third surface opposing the first surface and separated from the first surface, and a fourth surface on an opposite side to the third surface. The second optical portion is light transmissive. The first connection region connects at least a portion of an end of the first optical portion and at least a portion of an end of the second optical portion, and provides a seamless connection to the first and second optical portions. The first connection region is light transmissive. At least one of the first or second surfaces includes a portion slanted to a plane perpendicular to a first direction from the second optical portion toward the first optical portion.

Abstract: A flow passage structure includes a member. The member includes a plurality of first openings, a plurality of second openings, a flow passage, and a plurality of joining and branching parts. The flow passage connects the first openings with the second openings. The joining and branching parts are provided in the flow passage and each have a plurality of first parts having respective first ends connected with each other and a plurality of second parts having respective second ends connected with each other. The second parts are closer to the second openings than the first parts are, in a path between the first opening and the second opening. The first ends are connected with the second ends in each joining and branching part.

Abstract: A semiconductor memory device according to an embodiment includes a substrate, a stacked body provided on the substrate, a plurality of electrode films being stacked to be separated from each other in the stacked body, a semiconductor pillar piercing the plurality of electrode films, a first insulating film provided between the semiconductor pillar and the electrode films, a second insulating film provided between the semiconductor pillar and the first insulating film; and a third insulating film provided between the first insulating film and the electrode films. The first insulating film includes silicon, nitrogen, oxygen, and carbon.

Abstract: A nozzle device according to an embodiment includes a first opening, a plurality of second openings, and a first duct part. The first duct part includes at least one first branching part having a first part extending in a first direction and a plurality of second parts connected to a first end of the first part and extending in respective directions intersecting with the first direction. The first duct part connects the first opening and the second openings and is branched at least once by the first branching part in a path extending from the first opening to the second openings. The path lengths and the numbers of first branching parts between the first opening and the respective second openings are the same. The cross-sectional area of the first end of the first part is smaller than the cross-sectional area of a second end of the first part.