Abstract: A polyamide film satisfying (a) a haze value of not more than 5.0%, (b) a coefficient of kinetic friction (A) of not more than 1.0 under 50% humidity, the coefficient (A) being measured with regard to fiction between the same two polyamide films, and (c) a ratio of coefficients of kinetic friction (B)/(A) of not more than 1.5, the (B) being a coefficient of kinetic friction at 65% humidity, a billy oriented polyamide film showing an average dimensional change of not more than 3.0% and a difference between the smallest dimensional change and the largest dimensional change of not more than 2.0%, between before immersion in hot water at 95° C. and during the immersion, and an average dimensional change of not more than 4.0% and a difference between the smallest dimensional change and the largest dimensional change of not more than 2.0%, between the film without treatment and the film after withdrawal from said hot water; and a polyamide laminate film containing the film as a substrate layer.

Abstract: A process for production of a hydrogenated amorphous silicon film of a silicon compound containing at least one element selected from the group consisting of hydrogen and halogens and having a photosensitivity of not less than 0.1 erg/cm.sup.2 at 780 nm, which comprisessupplying a gas selected from the group consisting of SiH.sub.4, SiF.sub.4 and Si.sub.2 H.sub.6 into a discharge space, andsubjecting the gas to glow discharge within the discharge space having a gradient discharge intensity.The present invention provides an a-SiH film which has a remarkable high sensitivity in a long wavelength region with maintaining a high photosensitivity in a visible light region, and has a remarkable less defect density, and the process for production of such film in a high deposition rate.

Abstract: A process for production of a hydrogenated amorphous silicon film of a silicon compound containing at least one element selected from the group consisting of hydrogen and halogens and having a photosensitivity of not less than 0.1 erg/cm.sup.2 at 780 nm, which comprisessupplying a gas selected from the group consisting of SiH.sub.4, SiF.sub.4 and Si.sub.2 H.sub.6 into a discharge space, andsubjecting the gas to glow discharge within the discharge space having a gradient discharge intensity.The present invention provides an a-SiH film which has a remarkable high sensitivity in a long wavelength region with maintaining a high photosensitivity in a visible light region, and has a remarkable less defect density, and the process for production of such film in a high deposition rate.