Abstract: Nonvolatile memory (e.g. phase change memory) devices, systems, and methods that minimize energy expenditure and wear while providing greatly improved error rate with respect to marginal bits are disclosed and described.

Abstract: Nonvolatile memory (e.g. phase change memory) devices, systems, and methods that minimize energy expenditure and wear while providing greatly improved error rate with respect to marginal bits are disclosed and described.

Abstract: Nonvolatile memory (e.g. phase change memory) devices, systems, and methods of programming the nonvolatile memory including sensing of a snapback current using a set demarcation voltage for set bit mapped cells and a reset demarcation voltage for reset bit mapped cells before selective writes.

Abstract: In one embodiment, an apparatus comprises read circuitry to apply a read voltage to a three dimensional crosspoint (3DXP) memory cell; and write setback circuitry to apply a first setback pulse having a first magnitude to the 3DXP memory cell in response to the application of the read voltage, wherein applying the first setback pulse comprises bypassing a current mirror that is to limit or control a magnitude of a second setback pulse applied to the 3DXP memory cell when the current mirror is coupled to the 3DXP memory cell.

Abstract: In one embodiment, an apparatus comprises read circuitry to apply a read voltage to a three dimensional crosspoint (3DXP) memory cell; and write setback circuitry to apply a first setback pulse having a first magnitude to the 3DXP memory cell in response to the application of the read voltage, wherein applying the first setback pulse comprises bypassing a current mirror that is to limit or control a magnitude of a second setback pulse applied to the 3DXP memory cell when the current mirror is coupled to the 3DXP memory cell.

Abstract: In one embodiment, an apparatus comprises read circuitry to apply a read voltage to a three dimensional crosspoint (3DXP) memory cell; and write setback circuitry to apply a first setback pulse having a first magnitude to the 3DXP memory cell in response to the application of the read voltage, wherein applying the first setback pulse comprises bypassing a current mirror that is to limit or control a magnitude of a second setback pulse applied to the 3DXP memory cell when the current mirror is coupled to the 3DXP memory cell.

Abstract: In one embodiment, an apparatus comprises read circuitry to apply a read voltage to a three dimensional crosspoint (3DXP) memory cell; and write setback circuitry to apply a first setback pulse having a first magnitude to the 3DXP memory cell in response to the application of the read voltage, wherein applying the first setback pulse comprises bypassing a current mirror that is to limit or control a magnitude of a second setback pulse applied to the 3DXP memory cell when the current mirror is coupled to the 3DXP memory cell.

Abstract: Nonvolatile memory (e.g. phase change memory) devices, systems, and methods of programming the nonvolatile memory including dual demarcation voltage sensing before writes.

Abstract: A double cascode protected switchable voltage source may be used to selectively provide positive or negative voltage sources, for example, to a flash memory. The positive supply may be connected through a PMOS pass device to a first cascode protection device. A negative supply may be connected through an NMOS pass device and an NMOS cascode protection device to an output. The circuits may be designed so that exceeding snapback limits and gate aided drain breakdown are less likely.

Abstract: A double cascode protected switchable voltage source may be used to selectively provide positive or negative voltage sources, for example, to a flash memory. The positive supply may be connected through a PMOS pass device to a first cascode protection device. A negative supply may be connected through an NMOS pass device and an NMOS cascode protection device to an output. The circuits may be designed so that exceeding snapback limits and gate aided drain breakdown are less likely.

Abstract: Methods and apparatuses associated with providing a bias voltage for an n-type and a p-type device. A high voltage may be received and used to derive a bias voltage that would reduce a risk of gate-aided breakdown of the drain-to-substrate channel-side pn-junction in an n-type device. The high voltage may be used to derive a bias voltage that would reduce the risk of gate-aided breakdown of the drain-to-substrate channel-side pn-junction in a p-type device.

Abstract: A method and apparatus to provide a low voltage reference generation. The apparatus includes a reference voltage generator to receive a first input voltage signal and output a reference voltage signal. A voltage level detector electrically coupled to the reference voltage generator to receive the reference voltage signal and also receive a second input voltage signal. The voltage level detector compares the second input voltage signal to the reference voltage signal for generating an output based on the compared signals.

Abstract: A method and apparatus to provide a low voltage reference generation. The apparatus includes a reference voltage generator to receive a first input voltage signal and output a reference voltage signal. A voltage level detector electrically coupled to the reference voltage generator to receive the reference voltage signal and also receive a second input voltage signal. The voltage level detector compares the second input voltage signal to the reference voltage signal for generating an output based on the compared signals.

Abstract: An apparatus to provide a novel bi-voltage level switching. The apparatus includes a first level shifting buffer coupled to a voltage supply, an input, and a first transistor. The first transistor coupled to the voltage supply and an output. A second level shifting buffer coupled to the voltage supply, the input and second transistor. The second transistor coupled to the output and a voltage source.

Abstract: The present invention provides a method, apparatus, and system for rapid transition of a charge pump circuit from a low power state to a high power state. The charge pump circuit has at least one pump stage. The at least one pump stage includes at least a first capacitor coupled to a gate of a first switching transistor forming a boot node and at least a second capacitor coupled to an output node of the at least one pump stage. It is determined whether the charge pump circuit is in the low power state or the high power state. If the charge pump circuit is in the low power state, a first predetermined voltage and a second predetermined voltage that are different than the ground voltage level are applied to the boot node and the output node, respectively. If the charge pump circuit is in the high power state, the first predetermined voltage and the second predetermined voltage are removed from the boot node and the output node, respectively.

Abstract: A method and apparatus for controlling a charge pump. A detection circuit is used to assert a detect signal when a power supply voltage exceeds a first threshold voltage and deassert the detect signal in response to a trigger. The detect signal is used to force a charge pump to operate in a mode that drives the capacitive node at its output to the target voltage with reduced latency. This is particularly useful for a device which may operate the charge pump in a reduced power mode which is designed to maintain the node voltage at reduced power rather than drive it to the degree necessary for reduced latency during power up.

Abstract: A precision voltage reference circuit which includes a pair of similar flash EEPROM memory cells, each of the pair of similar flash EEPROM memory cells having a different charge on its floating gate; circuitry for connecting each of said cells in a pair of parallel circuits in which equal current values are generated in an equilibrium condition; apparatus for sensing a voltage in each of said pair of parallel circuits to provide an output voltage which may be used as a reference value when the currents are in equilibrium; and apparatus for sensing variations in the output voltage to vary the current through the flash EEPROM memory cells to bring the currents into equilibrium when the reference voltage varies from the voltage provided at equilibrium.