Abstract: An IR-to-visible converter for a solid-state image converting device including a photoconductive layer and an electroluminescent layer is sensitive to 1.5 .mu.m region IR rays and can convert such IR rays with high efficiency into visible light perceivable even in a well-lighted room. The IR-to-visible converter is characterized by using an IR to visible upconversion phosphors layer which has emission peaks in the sensitive wavelength region of the photoconductor layer, the IR to visible upconversion phosphors layer being optically combined with photoconductive layer.

Abstract: A solid-state image converting device comprises a transparent substrate, a transparent electrode formed on the transparent substrate, an EL layer, formed on the transparent electrode, emitting light by the application of an electric field, a dot-like low resistance layer formed on the EL layer, a photoconductive layer formed on the dot-like low resistance layer, and a back electrode formed on the photoconductive layer. A radiation image entered the transparent substrate or the back electrode is converted into a visible light image having high brightness on the back electrode or the transparent substrate.