Abstract: Smaller active regions are enabled by forming nickel suicide extensions from the nickel silicide layers on the source/drain regions and landing contacts on the nickel silicide extensions. The nickel silicide extensions are formed by implanting Si ions in the field oxide areas adjacent to the active regions, prior to depositing Ni, to catalyze the reaction of Ni and Si during annealing to form a nickel silicide layer that extends from the source/drain regions onto the Si-implanted field oxide areas. In an embodiment of the present invention, the nickel silicide is NiSi.

Abstract: An improved manufacturing process and an improved device made by the process for retarding diffusion of implanted dopants during subsequent high-temperature processing. A layer of an electrically inactive species is implanted well below the active dopant layers, and the excess interstitials due to damage from the electrically inactive species layer form a retarding gradient which opposes dopant diffusion. Using this process, shallow source-drain junctions can be achieved, and lateral encroachment of LDD implants under the gate can be minimized.