Abstract: Embodiments of the present disclosure are directed towards a protective multilayer coating for process chamber components exposed to temperatures from about 20° C. to about 300° C. during use of the process chamber. The protective multilayer coating comprises a bond layer and a top layer, the bond layer is formed on a chamber component to reduce the stress between the top layer and the chamber component. The reduced stress decreases or prevents particle shedding from the top layer of the multilayer coating during and after use of the process chamber. The bond layer comprises titanium, titanium nitride, aluminum, or combinations thereof, and the top layer comprises tungsten nitride.

Abstract: A method for determining a converter Thevenin equivalent model for a converter system, includes: receiving measurement values of a coupling point voltage and a coupling point current measured at a point of common coupling between a grid emulator system and the converter system, wherein the grid emulator system supplies the converter system with a supply voltage; and determining a converter Thevenin impedance and a converter Thevenin voltage source of the converter Thevenin equivalent model by inputting the measurement values of the coupling point voltage and of the coupling point current into a coupled system model, which includes equations modelling the converter system and the grid emulator system and from which the converter Thevenin impedance and a converter Thevenin voltage source are calculated.

Abstract: One embodiment of the disclosure provides a method of fabricating a chamber component with a coating layer disposed on an interface layer with desired film properties. In one embodiment, a method of fabricating a coating material includes providing a base structure comprising an aluminum or silicon containing material, forming an interface layer on the base structure, wherein the interface layer comprises one or more elements from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and forming a coating layer on the interface layer, wherein the coating layer has a molecular structure of SivYwMgxAlyOz. In another embodiment, a chamber component includes an interface layer disposed on a base structure, wherein the interface layer is selected from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and a coating layer disposed on the interface layer, wherein the coating layer has a molecular structure of SivYwMgxAlyOz.

Abstract: One embodiment of the disclosure provides a method of fabricating a chamber component with a coating layer disposed on an interface layer with desired film properties. In one embodiment, a method of fabricating a coating material includes providing a base structure comprising an aluminum or silicon containing material, forming an interface layer on the base structure, wherein the interface layer comprises one or more elements from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and forming a coating layer on the interface layer, wherein the coating layer has a molecular structure of SivYwMgxAlyOz. In another embodiment, a chamber component includes an interface layer disposed on a base structure, wherein the interface layer is selected from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and a coating layer disposed on the interface layer, wherein the coating layer has a molecular structure of SivYwMgxAlyOz.

Abstract: The invention is concerned with an inhibitor module arrangement, a shielding arrangement comprising an inhibitor module and a converter station comprising a converter and a shielding arrangement. The inhibitor module arrangement comprises a first string, a second string, and at least one first inhibitor module (30), where the first string comprises resistors (R1), the second string comprises capacitors (C1, C2, C3), the first string is physically separated from and electrically connected in parallel with the second string and the at least one first inhibitor module (30) comprises a first electrical connection terminal (32) at a first end for connection to a piece of high voltage equipment, a second electric connection terminal (34) at a second end for connection to a first shield element for this piece and a closed interior comprising at least one of the strings electrically connected between the first and the second electrical connection terminals (32, 34).

Abstract: Embodiments of the present disclosure provide protective coatings, i.e., diffusion and thermal barrier coatings, for aluminum alloy substrates. In particular, embodiments described herein provide a protective layer stack comprising a tantalum nitride layer disposed on an aluminum alloy substrate and a ceramic layer disposed on the tantalum nitride layer. In some embodiments, the aluminum alloy substrates comprise processing chambers and processing chamber components used in the field of electronic device manufacturing, e.g., semiconductor device manufacturing. In one embodiment, an article includes a substrate, a tantalum nitride layer disposed on the substrate, and a ceramic layer disposed on the tantalum nitride layer.

Abstract: A shielding arrangement can be provided for a piece of high voltage equipment spaced from a neighboring object. The piece of high voltage equipment has a first electric potential and the neighboring object has a second electric potential. The shielding arrangement includes a resistor, a shield element for connection to the high voltage equipment via the resistor, and a capacitor connected in parallel with the resistor. A resistance of the resistor and a capacitance of the capacitor together define a time constant in a range of 10 ?s-50 ms.

Abstract: A projectile with selectable angle of attack for increased impact on a target includes an active charge and controllable initiation device for initiation of the active charge, wherein the projectile also includes at least one side-acting impulse motor for tilting the projectile relative to its trajectory from a substantially vertical position, in which the front face of the projectile is directed toward the target, into a more horizontal position, in which the outer surface of the projectile is directed toward the target.

Abstract: The invention is concerned with an inhibitor module arrangement, a shielding arrangement comprising an inhibitor module and a converter station comprising a converter and a shielding arrangement. The inhibitor module arrangement comprises a first string, a second string, and at least one first inhibitor module (30), where the first string comprises resistors (R1), the second string comprises capacitors (C1, C2, C3), the first string is physically separated from and electrically connected in parallel with the second string and the at least one first inhibitor module (30) comprises a first electrical connection terminal (32) at a first end for connection to a piece of high voltage equipment, a second electric connection terminal (34) at a second end for connection to a first shield element for this piece and a closed interior comprising at least one of the strings electrically connected between the first and the second electrical connection terminals (32, 34).

Abstract: A shielding arrangement can be provided for a piece of high voltage equipment spaced from a neighboring object. The piece of high voltage equipment has a first electric potential and the neighboring object has a second electric potential. The shielding arrangement includes a resistor, a shield element for connection to the high voltage equipment via the resistor, and a capacitor connected in parallel with the resistor. A resistance of the resistor and a capacitance of the capacitor together define a time constant in a range of 10 ?s-50 ms.

Abstract: A method for determining a converter Thevenin equivalent model for a converter system, includes: receiving measurement values of a coupling point voltage and a coupling point current measured at a point of common coupling between a grid emulator system and the converter system, wherein the grid emulator system supplies the converter system with a supply voltage; and determining a converter Thevenin impedance and a converter Thevenin voltage source of the converter Thevenin equivalent model by inputting the measurement values of the coupling point voltage and of the coupling point current into a coupled system model, which includes equations modelling the converter system and the grid emulator system and from which the converter Thevenin impedance and a converter Thevenin voltage source are calculated.

Abstract: Embodiments of the disclosure provide a chamber component for use in a plasma processing chamber apparatus. The chamber component may include a coating layer that provides a fluorine-rich surface. In one embodiment, a chamber component, for use in a plasma processing apparatus, includes a body having an outer layer comprising yttria having a coating layer formed thereon, wherein the coating layer comprises a yttrium fluoride containing material.

Abstract: The present invention generally relates method and part wear indicator for identifying an eroded chamber component in an etching or other plasma processing chamber. In one embodiment, a chamber component has a part wear indicator. The chamber component has a body. The body has a top surface and a bottom surface. A part wear indicator material is disposed in the chamber component body. The part wear indicator has a body. The body of the part wear indicator has a transparent first layer. A second layer has a tracer material disposed therein and wherein the first layer is closer to the top surface of the top surface than the second layer.

Abstract: Embodiments of the disclosure generally relate to a system, apparatus and method for testing a coating over a semiconductor chamber component. In one embodiment, a test station comprises a hollow tube, a sensor coupled to a top end of the tube and a processing system communicatively coupled to the sensor. The hollow tube has an open bottom end configured for sealingly engaging a coating layer of the semiconductor chamber component. The sensor is configured to detect the presence of a gaseous byproduct of a reaction between a reagent disposed in the hollow tube and a base layer disposed under the coating layer. The processing system is configured to determine exposure of the base layer through the coating layer in response to information about the presence of the gaseous byproduct. In another embodiment, the processing system is communicatively coupled to each sensor of a plurality of test stations.

Abstract: One embodiment of the disclosure provides a method of fabricating a chamber component with a coating layer disposed on an interface layer with desired film properties. In one embodiment, a method of fabricating a coating material includes providing a base structure comprising an aluminum or silicon containing material, forming an interface layer on the base structure, wherein the interface layer comprises one or more elements from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and forming a coating layer on the interface layer, wherein the coating layer has a molecular structure of SivYwMgxAlyOz. In another embodiment, a chamber component includes an interface layer disposed on a base structure, wherein the interface layer is selected from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and a coating layer disposed on the interface layer, wherein the coating layer has a molecular structure of SivYwMgxAlyOz.

Abstract: A projectile with selectable angle of attack for increased impact on a target includes an active charge and controllable initiation device for initiation of the active charge, wherein the projectile also includes at least one side-acting impulse motor for tilting the projectile relative to its trajectory from a substantially vertical position, in which the front face of the projectile is directed toward the target, into a more horizontal position, in which the outer surface of the projectile is directed toward the target.

Abstract: Embodiments of the present disclosure provide protective coatings, i.e., diffusion and thermal barrier coatings, for aluminum alloy substrates. In particular, embodiments described herein provide a protective layer stack comprising a tantalum nitride layer disposed on an aluminum alloy substrate and a ceramic layer disposed on the tantalum nitride layer. In some embodiments, the aluminum alloy substrates comprise processing chambers and processing chamber components used in the field of electronic device manufacturing, e.g., semiconductor device manufacturing. In one embodiment, an article includes a substrate, a tantalum nitride layer disposed on the substrate, and a ceramic layer disposed on the tantalum nitride layer.

Abstract: Embodiments of the present disclosure are directed towards a protective multilayer coating for process chamber components exposed to temperatures from about 20° C. to about 300° C. during use of the process chamber. The protective multilayer coating comprises a bond layer and a top layer, the bond layer is formed on a chamber component to reduce the stress between the top layer and the chamber component. The reduced stress decreases or prevents particle shedding from the top layer of the multilayer coating during and after use of the process chamber. The bond layer comprises titanium, titanium nitride, aluminum, or combinations thereof, and the top layer comprises tungsten nitride.

Abstract: Methods for detecting network model data errors are disclosed. In some examples, methods for detecting network model data errors may include splitting a network model into a first plurality of portions, executing an algorithm on each of the portions, identifying a portion for which the algorithm is determined to be non-converged, splitting the identified portion into a second plurality of portions, repeating the executing, identifying and splitting the identified portion until a resulting identified portion is smaller than a predefined threshold, and examining the resulting identified portion to identify plausible data errors therein. In some examples, examining the resulting identified portion to identify plausible data errors therein may include executing a modified algorithm, which may include an augmented measurement set, on the identified portion.

Abstract: A method of producing a diffusion alloyed powder having an iron or iron-based core powder having particles of an alloying powder containing Cu and Ni bonded to the surface of the core particles, including providing a unitary alloying powder capable of forming particles of a Cu and Ni containing alloy, mixing the unitary alloying powder with the core powder, and heating the mixed powders in a non-oxidizing or reducing atmosphere to a temperature of 500-1000° C. during a period of 10-120 minutes to convert the alloying powder into a Cu and Ni containing alloy, so as to diffusion bond particles of the Cu and Ni alloy to the surface of the iron or iron-based core powder.