Patents by Inventor Matsuhiro Mori

Matsuhiro Mori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100039844
    Abstract: A semiconductor device which can avoid increase of a conduction loss of an IGBT, secure a low noise characteristic and also reduce a switch loss. The switching device is of a trench gate type, in which a drift n? layer 110 is exposed to its main surface to a floating p layer 126 and to trench gates. In other words, the floating p layer 126 is provided within the drift n? layer 110 to be spaced from the trench gates.
    Type: Application
    Filed: August 7, 2009
    Publication date: February 18, 2010
    Inventors: Taiga ARAI, Matsuhiro Mori