Patents by Inventor Matt Metz

Matt Metz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of forming low interface resistance rare earth metal contacts and structures formed thereby
    Patent number: 9934976
    Abstract: Methods and associated structures of forming a microelectronic device are described. Those methods may include forming a contact opening in an inter layer dielectric (ILD) disposed on a substrate, wherein a source/drain contact area is exposed, forming a rare earth metal layer on the source/drain contact area, forming a transition metal layer on the rare earth metal layer; and annealing the rare earth metal layer and the transition metal layer to form a metal silicide stack structure.
    Type: Grant
    Filed: December 18, 2008
    Date of Patent: April 3, 2018
    Assignee: Intel Corporation
    Inventors: Niloy Mukherjee, Matt Metz, Gilbert Dewey, Jack Kavalieros, Robert S Chau
  • Methods of forming low interface resistance rare earth metal contacts and structures formed thereby
    Publication number: 20100155954
    Abstract: Methods and associated structures of forming a microelectronic device are described. Those methods may include forming a contact opening in an inter layer dielectric (ILD) disposed on a substrate, wherein a source/drain contact area is exposed, forming a rare earth metal layer on the source/drain contact area, forming a transition metal layer on the rare earth metal layer; and annealing the rare earth metal layer and the transition metal layer to form a metal silicide stack structure.
    Type: Application
    Filed: December 18, 2008
    Publication date: June 24, 2010
    Inventors: Niloy Mukherjee, Matt Metz, Gilbert Dewey, Jack Kavalieros, Robert S. Chau