Patents by Inventor Matt Willis

Matt Willis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Guided operator VR training
    Patent number: 11928307
    Abstract: Aspects disclosed herein provide an operator training system that can train an operator about basic machine movements, operations, and applications, such as asphalt compactor rolling patterns, paving-by-numbers, milling-by-numbers, etc. with the use of a virtual reality headset at any point or time on a work site. The operator training system uses data received from the virtual reality headset and associated hand controls to guide the operator via training scenarios. The operator training system also includes providing immediate feedback on the outcome of the training scenario and may also identify one or more areas of improvement.
    Type: Grant
    Filed: March 11, 2022
    Date of Patent: March 12, 2024
    Assignee: Caterpillar Paving Products Inc.
    Inventors: David A. King, Todd Willis Mansell, Eric Remboldt, Matt Peasley
  • Methods of fabricating transistors having buried P-type layers coupled to the gate
    Patent number: 7943972
    Abstract: A unit cell of a metal-semiconductor field-effect transistor (MESFET) is provided. The MESFET has a source, a drain and a gate. The gate is between the source and the drain and on an n-type conductivity channel layer. A p-type conductivity region is provided beneath the gate between the source and the drain. The p-type conductivity region is spaced apart from the n-type conductivity channel layer and electrically coupled to the gate. Related methods are also provided herein.
    Type: Grant
    Filed: November 30, 2009
    Date of Patent: May 17, 2011
    Assignee: Cree, Inc.
    Inventors: Saptharishi Sriram, Matt Willis
  • Methods of Fabricating Transistors Having Buried P-Type Layers Coupled to the Gate
    Publication number: 20100072520
    Abstract: A unit cell of a metal-semiconductor field-effect transistor (MESFET) is provided. The MESFET has a source, a drain and a gate. The gate is between the source and the drain and on an n-type conductivity channel layer. A p-type conductivity region is provided beneath the gate between the source and the drain. The p-type conductivity region is spaced apart from the n-type conductivity channel layer and electrically coupled to the gate. Related methods are also provided herein.
    Type: Application
    Filed: November 30, 2009
    Publication date: March 25, 2010
    Inventors: Saptharishi Sriram, Matt Willis
  • Transistors having buried p-type layers coupled to the gate
    Patent number: 7646043
    Abstract: A unit cell of a metal-semiconductor field-effect transistor (MESFET) is provided. The MESFET has a source, a drain and a gate. The gate is between the source and the drain and on an n-type conductivity channel layer. A p-type conductivity region is provided beneath the gate between the source and the drain. The p-type conductivity region is spaced apart from the n-type conductivity channel layer and electrically coupled to the gate. Related methods are also provided herein.
    Type: Grant
    Filed: September 28, 2006
    Date of Patent: January 12, 2010
    Assignee: Cree, Inc.
    Inventors: Saptharishi Sriram, Matt Willis
  • TRANSISTORS HAVING BURIED P-TYPE LAYERS COUPLED TO THE GATE AND METHODS OF FABRICATING THE SAME
    Publication number: 20080079036
    Abstract: A unit cell of a metal-semiconductor field-effect transistor (MESFET) is provided. The MESFET has a source, a drain and a gate. The gate is between the source and the drain and on an n-type conductivity channel layer. A p-type conductivity region is provided beneath the gate between the source and the drain. The p-type conductivity region is spaced apart from the n-type conductivity channel layer and electrically coupled to the gate. Related methods are also provided herein.
    Type: Application
    Filed: September 28, 2006
    Publication date: April 3, 2008
    Inventors: Saptharishi Sriram, Matt Willis