Abstract: Modeling of electrical behavior during the virtual fabrication of a semiconductor device structure is discussed. Electrical behavior occurring in a designated region of a semiconductor device structure may be determined during the virtual fabrication process. For example, resistance or capacitance values may be determined within a modeling domain of interest.

Abstract: The modeling of a DSA step within a virtual fabrication process sequence for a semiconductor device structure is discussed. A 3D model is created by the virtual fabrication that represents and depicts the possible variation that can result from applying the DSA step as part of the larger fabrication sequence for the semiconductor device structure of interest. Embodiments capture the relevant behavior caused by polymer segregation into separate domains thereby allowing the modeling of the DSA step to take place with a speed appropriate for a virtual fabrication flow.

Abstract: Modeling of electrical behavior during the virtual fabrication of a semiconductor device structure is discussed. Electrical behavior occurring in a designated region of a semiconductor device structure may be determined during the virtual fabrication process. For example, resistance or capacitance values may be determined within a modeling domain of interest.

Abstract: Improving semiconductor device fabrication by enabling the identification and modeling of pattern dependent effects of fabrication processes is discussed. In one embodiment a local mask is generated from a 3-D model of a semiconductor device structure that was created in a 3-D virtual semiconductor fabrication environment from 2-D design layout data and a fabrication process sequence. The local mask is combined with a global mask based on the original design layout data to create a combined mask. The combined mask is convolved with at least one proximity function to generate a loading map which may be used to modify the behavior of one or more processes in the process sequence. This behavior modification enables the 3-D virtual semiconductor fabrication environment to deliver more accurate 3-D models that better predict the 3-D device structure when performing the virtual semiconductor device fabrication that serves as a prelude to physical fabrication.

Abstract: The modeling of a DSA step within a virtual fabrication process sequence for a semiconductor device structure is discussed. A 3D model is created by the virtual fabrication that represents and depicts the possible variation that can result from applying the DSA step as part of the larger fabrication sequence for the semiconductor device structure of interest. Embodiments capture the relevant behavior caused by polymer segregation into separate domains thereby allowing the modeling of the DSA step to take place with a speed appropriate for a virtual fabrication flow.

Abstract: A mechanism for identifying and modeling pattern dependent effects of processes in a 3-D Virtual Semiconductor Fabrication Environment is discussed.

Abstract: A 3-D multi-physics design environment (“3-D design environment”) for designing and simulating multi-physics devices such as MEMS devices is discussed. The 3-D design environment is programmatically integrated with a system modeling environment that is suitable for system-level design and simulation of analog-signal ICs, mixed-signal ICs and multi-physics systems. A parameterized MEMS device model is created in a 3-D graphical view in the 3-D design environment using parameterized model components that are each associated with an underlying behavioral model. After the MEMS device model is completed, it may be exported to a system modeling environment without subjecting the model to preliminary finite element meshing.

Abstract: A 3-D multi-physics design environment (“3-D design environment”) for designing and simulating multi-physics devices such as MEMS devices is discussed. The 3-D design environment is programmatically integrated with a system modeling environment that is suitable for system-level design and simulation of analog-signal ICs, mixed-signal ICs and multi-physics systems. A parameterized MEMS device model is created in a 3-D graphical view in the 3-D design environment using parameterized model components that are each associated with an underlying behavioral model. After the MEMS device model is completed, it may be exported to a system modeling environment without subjecting the model to preliminary finite element meshing.

Abstract: A system-level design and simulation environment utilizing a process specification tool that is programmatically integrated with the system level design and simulation environment thereby enabling the process-flexible design and simulation of Micro Electro-Mechanical Systems (MEMS) devices and other micro-fabricated devices is disclosed. The process specification tool is a software tool for specifying the details of the fabrication process and enables the separation of the process data from the system-level design and simulation environment. The process specification tool retrieves the process data, which may include both the process specification and material properties data. The separation of this process data from the system-level design and simulation environment allows the system-level model to have process-related parameters whose specification is not fixed, but rather is tied by reference to the process data.

Abstract: The present invention provides for a technique for taking advantage of the intrinsic electrical non-linearity of processing plasmas to add additional control variables that affect process performance. The technique provides for the adjustment of the electrical coupling circuitry, as well as the electrical excitation level, in response to measurements of the reactor voltage and current and to use that capability to modify the plasma characteristics to obtain the desired performance.