Abstract: In one embodiment, the invention is a method and apparatus for chip cooling. One embodiment of an apparatus for cooling a heat-generating device includes an inlet for receiving a fluid, a manifold comprising a plurality of apertures formed therein for decreasing the pressure of the fluid from a first pressure by adiabatic expansion for impinging the fluid on the heat-generating device once the pressure of the fluid is decreased from the first pressure.

Abstract: In one embodiment, the invention is a method and apparatus for chip cooling. One embodiment of an apparatus for cooling a heat-generating device includes an inlet for receiving a fluid, a manifold comprising a plurality of apertures formed therein for decreasing the pressure of the fluid from a first pressure by adiabatic expansion for impinging the fluid on the heat-generating device once the pressure of the fluid is decreased from the first pressure.

Abstract: In one embodiment, the invention is a method and apparatus for chip cooling. One embodiment of an apparatus for cooling a heat-generating device includes an inlet for receiving a fluid, a manifold comprising a plurality of apertures formed therein for decreasing the pressure of the fluid from a first pressure by adiabatic expansion for impinging the fluid on the heat-generating device once the pressure of the fluid is decreased from the first pressure.

Abstract: An electrochemical process comprising: providing a 125 mm or larger semiconductor wafer in electrical contact with a conducting surface, wherein at least a portion of the semiconductor wafer is in contact with an electrolytic solution, said semiconductor wafer functioning as a first electrode; providing a second electrode in the electrolytic solution, the first and second electrode connected to opposite ends of an electric power source; and irradiating a surface of the semiconductor wafer with a light source as an electric current is applied across the first and the second electrodes. The invention is also directed to an apparatus including a light source and electrochemical components to conduct the electrochemical process.

Abstract: An electrochemical process comprising: providing a 125 mm or larger semiconductor wafer in electrical contact with a conducting surface, wherein at least a portion of the semiconductor wafer is in contact with an electrolytic solution, said semiconductor wafer functioning as a first electrode; providing a second electrode in the electrolytic solution, the first and second electrode connected to opposite ends of an electric power source; and irradiating a surface of the semiconductor wafer with a light source as an electric current is applied across the first and the second electrodes. The invention is also directed to an apparatus including a light source and electrochemical components to conduct the electrochemical process.

Abstract: An electrochemical process comprising: providing a 125 mm or larger semiconductor wafer in electrical contact with a conducting surface, wherein at least a portion of the semiconductor wafer is in contact with an electrolytic solution, said semiconductor wafer functioning as a first electrode; providing a second electrode in the electrolytic solution, the first and second electrode connected to opposite ends of an electric power source; and irradiating a surface of the semiconductor wafer with a light source as an electric current is applied across the first and the second electrodes. The invention is also directed to an apparatus including a light source and electrochemical components to conduct the electrochemical process.

Abstract: In one embodiment, the invention is a method and apparatus for chip cooling. One embodiment of an apparatus for cooling a heat-generating device includes an inlet for receiving a fluid, a manifold comprising a plurality of apertures formed therein for decreasing the pressure of the fluid from a first pressure by adiabatic expansion for impinging the fluid on the heat-generating device once the pressure of the fluid is decreased from the first pressure.

Abstract: An apparatus for plating a magnetic film on a substrate includes: a track including a plurality of stopping points along the track; a permanent magnet placed on the track such that the permanent magnet can be moved along the track towards and away from the stopping points; at least one plating tank positioned on the stopping point; and a removable high permeability iron flux concentrator inserted into gaps between the substrate and inside walls of the plating tank, substantially surrounding the substrate and extending around and under the substrate.

Abstract: An apparatus for plating a magnetic film on a substrate includes: a track including a plurality of stopping points along the track; a permanent magnet placed on the track such that the permanent magnet can be moved along the track towards and away from the stopping points; at least one plating tank positioned on the stopping point; and a removable high permeability iron flux concentrator inserted into gaps between the substrate and inside walls of the plating tank, substantially surrounding the substrate and extending around and under the substrate.

Abstract: The present disclosure relates generally to semiconductor, integrated circuits, and particularly, but not by way of limitation, to centrifugal methods of filling high-aspect ratio vias and trenches with powders, pastes, suspensions of materials to act as any of a conducting, structural support, or protective member of an electronic component.

Abstract: In one embodiment, the invention is a method and apparatus for chip cooling. One embodiment of an apparatus for cooling a heat-generating device includes an inlet for receiving a fluid, a manifold comprising a plurality of apertures formed therein for decreasing the pressure of the fluid from a first pressure by adiabatic expansion for impinging the fluid on the heat-generating device once the pressure of the fluid is decreased from the first pressure.

Abstract: An electrochemical process comprising: providing a 125 mm or larger semiconductor wafer in electrical contact with a conducting surface, wherein at least a portion of the semiconductor wafer is in contact with an electrolytic solution, said semiconductor wafer functioning as a first electrode; providing a second electrode in the electrolytic solution, the first and second electrode connected to opposite ends of an electric power source; and irradiating a surface of the semiconductor wafer with a light source as an electric current is applied across the first and the second electrodes. The invention is also directed to an apparatus including a light source and electrochemical components to conduct the electrochemical process.

Abstract: An apparatus for plating a magnetic film on a substrate includes: a track including a plurality of stopping points along the track; a permanent magnet placed on the track such that the permanent magnet can be moved along the track towards and away from the stopping points; at least one plating tank positioned on the stopping point; and a removable high permeability iron flux concentrator inserted into gaps between the substrate and inside walls of the plating tank, substantially surrounding the substrate and extending around and under the substrate.

Abstract: The present disclosure relates generally to semiconductor, integrated circuits, and particularly, but not by way of limitation, to centrifugal methods of filling high-aspect ratio vias and trenches with powders, pastes, suspensions of materials to act as any of a conducting, structural support, or protective member of an electronic component.

Abstract: The present disclosure relates generally to semiconductor, integrated circuits, and particularly, but not by way of limitation, to centrifugal methods of filling high-aspect ratio vias and trenches with powders, pastes, suspensions of materials to act as any of a conducting, structural support, or protective member of an electronic component.

Abstract: An electrochemical process comprising: providing a 125 mm or larger semiconductor wafer in electrical contact with a conducting surface, wherein at least a portion of the semiconductor wafer is in contact with an electrolytic solution, said semiconductor wafer functioning as a first electrode; providing a second electrode in the electrolytic solution, the first and second electrode connected to opposite ends of an electric power source; and irradiating a surface of the semiconductor wafer with a light source as an electric current is applied across the first and the second electrodes. The invention is also directed to an apparatus including a light source and electrochemical components to conduct the electrochemical process.

Abstract: An electrolytic processing apparatus can planarize uniformly over an entire surface of a substrate under a low pressure without any damages to the substrate. The electrolytic processing apparatus has a substrate holder configured to hold and rotate a substrate having a metal film formed on a surface of the substrate and an electrolytic processing unit configured to perform an electrolytic process on the substrate held by the substrate holder. The electrolytic processing unit has a rotatable processing electrode, a polishing pad attached to the rotatable processing electrode, and a pressing mechanism configured to press the polishing pad against the substrate.

Abstract: The present disclosure relates generally to semiconductor, integrated circuits, and particularly, but not by way of limitation, to centrifugal methods of filling high-aspect ratio vias and trenches with powders, pastes, suspensions of materials to act as any of a conducting, structural support, or protective member of an electronic component.

Abstract: A workpiece holder for processing a workpiece in a chamber of a liquified fluid. In one embodiment, the workpiece holder includes a cylindrically shaped rotator having an exterior wall and at least one fluid guide on the exterior wall. The rotator is adapted to rotate and provide fluid flow across a first end of the rotator, and is adapted to provide fluid flow and mixing perpendicular to a surface of the first end of the rotator. A fixture is coupled to the first end of the rotator for securing the workpiece to the first end of the rotator.

Abstract: A workpiece holder for processing a workpiece in a chamber of a liquified fluid. In one embodiment, the workpiece holder includes a cylindrically shaped rotator having an exterior wall and at least one fluid guide on the exterior wall. The rotator is adapted to rotate and provide fluid flow across a first end of the rotator, and is adapted to provide fluid flow and mixing perpendicular to a surface of the first end of the rotator. A fixture is coupled to the first end of the rotator for securing the workpiece to the first end of the rotator.