Patents by Inventor Matthew Donofrio

Matthew Donofrio has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9437783
    Abstract: A light emitting device includes an active layer configured to provide light emission due to carrier recombination therein, a surface on the active layer, and an electrically conductive contact structure on the surface. The contact structure includes at least one plated contact layer. The contact structure may include a sublayer that conforms to the surface roughness of the underlying surface, and the plated contact layer may be substantially free of the surface roughness of the underlying surface. The surface of the plated contact layer may be substantially planar and/or otherwise configured to reflect the light emission from the active layer. Related fabrication methods are also discussed.
    Type: Grant
    Filed: May 8, 2012
    Date of Patent: September 6, 2016
    Assignee: Cree, Inc.
    Inventors: Pritish Kar, David Beardsley Slater, Jr., Matthew Donofrio, Brad Williams
  • Publication number: 20160211420
    Abstract: Simplified LED chip architectures or chip builds are disclosed that can result in simpler manufacturing processes using fewer steps. The LED structure can have fewer layers than conventional LED chips with the layers arranged in different ways for efficient fabrication and operation. The LED chips can comprise an active LED structure. A dielectric reflective layer is included adjacent to one of the oppositely doped layers. A metal reflective layer is on the dielectric reflective layer, wherein the dielectric and metal reflective layers extend beyond the edge of said active region. By extending the dielectric layer, the LED chips can emit with more efficiency by reflecting more LED light to emit in the desired direction. By extending the metal reflective layer beyond the edge of the active region, the metal reflective layer can serve as a current spreading layer and barrier, in addition to reflecting LED light to emit in the desired direction.
    Type: Application
    Filed: January 21, 2015
    Publication date: July 21, 2016
    Inventors: MATTHEW DONOFRIO, PRITISH KAR, STEN HEIKMAN, HARSHAD GOLAKIA, RAJEEV ACHARYA, YUVARAJ DORA
  • Patent number: 9397266
    Abstract: Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode and cathode contacts extend on the first face to collectively cover substantially all of the first face. A small gap may be provided between the contacts.
    Type: Grant
    Filed: January 20, 2014
    Date of Patent: July 19, 2016
    Assignee: CREE, INC.
    Inventors: Matthew Donofrio, James Ibbetson, Zhimin James Yao
  • Publication number: 20160189954
    Abstract: Semiconductor devices are fabricated by providing a growth substrate having a thickness within a preselected range and then bonding a lower surface of the growth substrate to an upper surface of the carrier substrate to form a composite substrate. One or more semiconductor growth processes are performed at one or more growth temperatures of at least 500° C. to form one or more semiconductor layers on an upper surface of the composite substrate. The growth substrate is separated from the carrier substrate after the one or more semiconductor growth processes are completed so that the carrier substrate may be reused with a second growth substrate.
    Type: Application
    Filed: December 31, 2014
    Publication date: June 30, 2016
    Inventors: Hua-Shuang Kong, John A. Edmond, Matthew Donofrio, Michael J. Bergmann, David B. Slater, JR.
  • Patent number: 9349596
    Abstract: Methods of forming a silicon carbide semiconductor device are disclosed. The methods include forming a semiconductor device at a first surface of a silicon carbide substrate having a first thickness, and mounting a carrier substrate to the first surface of the silicon carbide substrate. The carrier substrate provides mechanical support to the silicon carbide substrate. The methods further include thinning the silicon carbide substrate to a thickness less the first thickness, forming a metal layer on the thinned silicon carbide substrate opposite the first surface of the silicon carbide substrate, and locally annealing the metal layer to form an ohmic contact on the thinned silicon carbide substrate opposite the first surface of the silicon carbide substrate. The silicon carbide substrate is singulated to provide a singulated semiconductor device.
    Type: Grant
    Filed: May 29, 2009
    Date of Patent: May 24, 2016
    Assignee: Cree, Inc.
    Inventors: Anant Agarwal, Sei-Hyung Ryu, Matthew Donofrio
  • Patent number: 9281445
    Abstract: An LED includes a mesa having a Group III Nitride mesa face and a mesa sidewall, on an underlying LED structure. The mesa face includes Group III Nitride surface features having tops that are defined by mask features, having bottoms, and having sides that extend along crystal planes of the Group III Nitride. The mask features may include a two-dimensional array of dots that are spaced apart from one another. Related fabrication methods are also disclosed.
    Type: Grant
    Filed: October 21, 2014
    Date of Patent: March 8, 2016
    Assignee: Cree, Inc.
    Inventor: Matthew Donofrio
  • Patent number: 9243777
    Abstract: The present disclosure relates to optical elements and coatings comprising rare-earth element (REE) compounds for light wavelength attenuation of light emitting diode (LED) elements and lamps. More particularly, the present disclosure relates to LED elements and lamps comprising wavelength attenuating elements comprising REE compounds having at least a portion of non-crystalline, non-hydrate form, methods of preparing such elements, and LED elements, LED arrays, LED packages, optical elements, lamps and systems made with same.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: January 26, 2016
    Assignee: Cree, Inc.
    Inventors: Matthew Donofrio, Gerald Negley, Shaow B. Lin
  • Patent number: 9166126
    Abstract: Methods are disclosed including applying a conformal coating to multiple light emitters. The conformal coating forms in gap areas between adjacent ones of the light emitters. The plurality of light emitters are separated into individual light emitters. The individual light emitters include the conformal coating that extends to a space corresponding to respective gap areas. Light emitting structures are disclosed including a semiconductor light emitting diode (LED) having an active region and a conformal coating including a first portion and a second portion, the first portion corresponding to at least one surface of the LED and the second portion extending from the first portion.
    Type: Grant
    Filed: January 31, 2011
    Date of Patent: October 20, 2015
    Assignee: Cree, Inc.
    Inventors: Matthew Donofrio, Howard Nordby, Peter S. Andrews
  • Patent number: 9115870
    Abstract: A lamp comprises an enclosure having a reflective surface and an exit surface through which light is emitted from the enclosure and a base. A plurality of LEDs are located in the enclosure and are operable to emit light when energized through an electrical path from the base. The reflective surface comprises a first reflective layer applied to the enclosure and a second reflective layer over the first reflective layer. The first reflective layer is a metalized surface. The second layer comprises a transparent carrier such as silicone mixed with a reflective media such as TiO2, Barium Sulfate and/or ZnO or silver.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: August 25, 2015
    Assignee: Cree, Inc.
    Inventors: Gerald H. Negley, Matthew Donofrio
  • Patent number: 9053958
    Abstract: An electronic device may include a packaging substrate having a packaging face and first and second pluralities of light emitting diodes electrically and mechanically coupled to the packaging face of the packaging substrate. The packaging substrate may include first and second electrically conductive pads on the packaging face. The light emitting diodes of the first plurality of light emitting diodes may be electrically coupled in parallel between the first electrically conductive pad and an interconnection structure on the packaging face. The light emitting diodes of the second plurality of light emitting diodes may be electrically coupled in parallel between the interconnection structure and the second electrically conductive pad.
    Type: Grant
    Filed: May 3, 2012
    Date of Patent: June 9, 2015
    Assignee: Cree, Inc.
    Inventors: Matthew Donofrio, Christopher P. Hussell, John Adam Edmond
  • Publication number: 20150069430
    Abstract: A phosphor-converted light emitting device includes a light emitting diode (LED) on a substrate, where the LED comprises a stack of epitaxial layers comprising a p-n junction. A wavelength conversion material is in optical communication with the LED. According to one embodiment of the phosphor-converted light emitting device, a selective filter is adjacent to the wavelength conversion material, and the selective filter comprises a plurality of nanoparticles for absorbing light from the LED not down-converted by the wavelength conversion material. According to another embodiment of the phosphor-converted light emitting device, a perpendicular distance between a perimeter of the LED on the substrate and an edge of the substrate is at least about 24 microns. According to another embodiment of the phosphor-converted light emitting device, the LED comprises a mirror layer on one or more sidewalls thereof for reducing light leakage through the sidewalls.
    Type: Application
    Filed: May 14, 2014
    Publication date: March 12, 2015
    Inventors: Brian T. Collins, Matthew Donofrio, Kevin W. Haberern, Bennett Langsdorf, Anoop Mathew, Harry A. Seibel, Iliya Todorov, Bradley E. Williams
  • Patent number: 8957430
    Abstract: A light emitting device is fabricated by providing a mounting substrate and an array of light emitting diode dies adjacent the mounting substrate to define gaps. A gel that is diluted in a solvent is applied on the substrate and on the array of light emitting dies. At least some of the solvent is evaporated so that the gel remains in the gaps, but does not completely cover the light emitting diode dies. For example, the gel substantially recedes from the substrate beyond the array of light emitting diode dies and also substantially recedes from an outer face of the light emitting diode dies. Related light emitting device structures are also described.
    Type: Grant
    Filed: February 9, 2012
    Date of Patent: February 17, 2015
    Assignee: Cree, Inc.
    Inventor: Matthew Donofrio
  • Publication number: 20150037918
    Abstract: An LED includes a mesa having a Group III Nitride mesa face and a mesa sidewall, on an underlying LED structure. The mesa face includes Group III Nitride surface features having tops that are defined by mask features, having bottoms, and having sides that extend along crystal planes of the Group III Nitride. The mask features may include a two-dimensional array of dots that are spaced apart from one another. Related fabrication methods are also disclosed.
    Type: Application
    Filed: October 21, 2014
    Publication date: February 5, 2015
    Inventor: Matthew Donofrio
  • Patent number: 8940561
    Abstract: Methods are disclosed including heating an optical element. An optical material is applied to the heated optical element to provide a conformal layer that is cured via the thermal energy in the heated optical element.
    Type: Grant
    Filed: March 3, 2010
    Date of Patent: January 27, 2015
    Assignee: Cree, Inc.
    Inventors: Matthew Donofrio, Nathaniel O. Cannon
  • Patent number: 8896008
    Abstract: An LED includes a mesa having a Group III Nitride mesa face and a mesa sidewall, on an underlying LED structure. The mesa face includes Group III Nitride surface features having tops that are defined by mask features, having bottoms, and having sides that extend along crystal planes of the Group III Nitride. The mask features may include a two-dimensional array of dots that are spaced apart from one another. Related fabrication methods are also disclosed.
    Type: Grant
    Filed: April 23, 2013
    Date of Patent: November 25, 2014
    Assignee: Cree, Inc.
    Inventor: Matthew Donofrio
  • Patent number: 8878209
    Abstract: A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a Group III nitride-based light emitting region including a plurality of Group III nitride-based layers. A lenticular surface directly contacts one of the Group III nitride-based layers of the light emitting region. The lenticular surface includes a transparent material that is different from the Group III nitride-based layer of the light emitting region that the lenticular surface directly contacts.
    Type: Grant
    Filed: February 19, 2014
    Date of Patent: November 4, 2014
    Assignee: Cree, Inc.
    Inventors: John Adam Edmond, David B. Slater, Jr., Jayesh Bharathan, Matthew Donofrio
  • Publication number: 20140312373
    Abstract: An LED includes a mesa having a Group III Nitride mesa face and a mesa sidewall, on an underlying LED structure. The mesa face includes Group III Nitride surface features having tops that are defined by mask features, having bottoms, and having sides that extend along crystal planes of the Group III Nitride. The mask features may include a two-dimensional array of dots that are spaced apart from one another. Related fabrication methods are also disclosed.
    Type: Application
    Filed: April 23, 2013
    Publication date: October 23, 2014
    Inventor: Matthew DONOFRIO
  • Patent number: 8866150
    Abstract: A silicon carbide power device is fabricated by forming a p-type silicon carbide epitaxial layer on an n-type silicon carbide substrate, and forming a silicon carbide power device structure on the p-type silicon carbide epitaxial layer. The n-type silicon carbide substrate is at least partially removed, so as to expose the p-type silicon carbide epitaxial layer. An ohmic contact is formed on at least some of the p-type silicon carbide epitaxial layer that is exposed. By at least partially removing the n-type silicon carbide substrate and forming an ohmic contact on the p-type silicon carbide epitaxial layer, the disadvantages of using a p-type substrate may be reduced or eliminated. Related structures are also described.
    Type: Grant
    Filed: May 31, 2007
    Date of Patent: October 21, 2014
    Assignee: Cree, Inc.
    Inventors: Mrinal Kanti Das, Qingchun Zhang, John M. Clayton, Jr., Matthew Donofrio
  • Publication number: 20140268808
    Abstract: A lamp comprises an enclosure having a reflective surface and an exit surface through which light is emitted from the enclosure and a base. A plurality of LEDs are located in the enclosure and are operable to emit light when energized through an electrical path from the base. The reflective surface comprises a first reflective layer applied to the enclosure and a second reflective layer over the first reflective layer. The first reflective layer is a metalized surface. The second layer comprises a transparent carrier such as silicone mixed with a reflective media such as TiO2, Barium Sulfate and/or ZnO or silver.
    Type: Application
    Filed: March 14, 2013
    Publication date: September 18, 2014
    Applicant: CREE, INC.
    Inventors: Gerald H. Negley, Matthew Donofrio
  • Publication number: 20140217435
    Abstract: A light emitting diode chip a support layer having a first face and a second face opposite the first face, a diode region on the first face of the support layer, and a bond pad on the second face of the support layer. The bond pad includes a gold-tin structure having a weight percentage of tin of 50% or more. The light emitting diode chip may include a plurality of active regions that are connected in electrical series on the light emitting diode chip.
    Type: Application
    Filed: April 14, 2014
    Publication date: August 7, 2014
    Applicant: Cree, Inc.
    Inventors: Michael John Bergmann, Christopher D. Williams, Kevin Shawne Schneider, Kevin Haberern, Matthew Donofrio