Abstract: An apparatus and method are described for measuring the thermal performance of a wafer chuck, such as an electrostatic chuck. In one example, the apparatus ha a chamber, a base to support a wafer chuck in the chamber, a heater to heat the chuck, a window through the exterior of the chamber, and an infrared imaging system to measure the temperature of the chuck while the chuck is heated.

Abstract: An electrostatic chuck is described with external flow adjustments for improved temperature distribution. In one example, a method for adjusting coolant flow in an electrostatic chuck includes heating a dielectric puck, the dielectric puck being for electrostatically gripping a silicon wafer. Heat is detected at a plurality of locations on a top surface of the dielectric puck, the locations each being thermally coupled to at least one of a plurality of coolant chambers of the electrostatic chuck. A plurality of valves are adjusted to control coolant flow into the coolant chambers based on the detected heat.

Abstract: An apparatus and method are described for measuring the thermal performance of a wafer chuck, such as an electrostatic chuck. In one example, the apparatus ha a chamber, a base to support a wafer chuck in the chamber, a heater to heat the chuck, a window through the exterior of the chamber, and an infrared imaging system to measure the temperature of the chuck while the chuck is heated.

Abstract: An apparatus and method are described for measuring the thermal performance of a wafer chuck, such as an electrostatic chuck. In one example, the apparatus ha a chamber, a base to support a wafer chuck in the chamber, a heater to heat the chuck, a window through the exterior of the chamber, and an infrared imaging system to measure the temperature of the chuck while the chuck is heated.

Abstract: An electrostatic chuck is described with external flow adjustments for improved temperature distribution. In one example, a method for adjusting coolant flow in an electrostatic chuck includes heating a dielectric puck, the dielectric puck being for electrostatically gripping a silicon wafer. Heat is detected at a plurality of locations on a top surface of the dielectric puck, the locations each being thermally coupled to at least one of a plurality of coolant chambers of the electrostatic chuck. A plurality of valves are adjusted to control coolant flow into the coolant chambers based on the detected heat.

Abstract: An electrostatic chuck is described with external flow adjustments for improved temperature distribution. In one example, an apparatus has a dielectric puck to electrostatically grip a silicon wafer. A cooling plate is fastened to and thermally coupled to the ceramic puck. A supply plenum receives coolant from an external source and a plurality of coolant chambers are thermally coupled to the cooling plate and receive coolant from the supply plenum. A return plenum is coupled to the cooling zones to exhaust coolant from the cooling zones and a plurality of flow control valves are positioned between the supply plenum and a respective one of the cooling zones to control the flow rate of coolant from the supply plenum to the cooling zones.

Abstract: An electrostatic chuck is described with external flow adjustments for improved temperature distribution. In one example, an apparatus has a dielectric puck to electrostatically grip a silicon wafer. A cooling plate is fastened to and thermally coupled to the ceramic puck. A supply plenum receives coolant from an external source and a plurality of coolant chambers are thermally coupled to the cooling plate and receive coolant from the supply plenum. A return plenum is coupled to the cooling zones to exhaust coolant from the cooling zones. A plurality of adjustable orifices are positioned between the supply plenum and a respective one of the cooling zones to control the flow rate of coolant from the supply plenum to the cooling zones.

Abstract: An apparatus and method are described for measuring the thermal performance of a wafer chuck, such as an electrostatic chuck. In one example, the apparatus has a chamber, a base to support a wafer chuck in the chamber, a heater to heat the chuck, a window through the exterior of the chamber, and an infrared imaging system to measure the temperature of the chuck while the chuck is heated.

Abstract: An electrostatic chuck is described with external flow adjustments for improved temperature distribution. In one example, an apparatus has a dielectric puck to electrostatically grip a silicon wafer. A cooling plate is fastened to and thermally coupled to the ceramic puck. A supply plenum receives coolant from an external source and a plurality of coolant chambers are thermally coupled to the cooling plate and receive coolant from the supply plenum. A return plenum is coupled to the cooling zones to exhaust coolant from the cooling zones. A plurality of adjustable orifices are positioned between the supply plenum and a respective one of the cooling zones to control the flow rate of coolant from the supply plenum to the cooling zones.

Abstract: An electrostatic chuck is described with external flow adjustments for improved temperature distribution. In one example, an apparatus has a dielectric puck to electrostatically grip a silicon wafer. A cooling plate is fastened to and thermally coupled to the ceramic puck. A supply plenum receives coolant from an external source and a plurality of coolant chambers are thermally coupled to the cooling plate and receive coolant from the supply plenum. A return plenum is coupled to the cooling zones to exhaust coolant from the cooling zones and a plurality of flow control valves are positioned between the supply plenum and a respective one of the cooling zones to control the flow rate of coolant from the supply plenum to the cooling zones.