Patents by Inventor Matthew L. Seaford

Matthew L. Seaford has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor layer
    Patent number: 7704824
    Abstract: The present invention provides a highly doped semiconductor layer. More specifically, the present invention provides a semiconductor layer that includes at least two impurities. Each impurity is introduced at a level below its respective degradation concentration. In this manner, the two or more impurities provide an additive conductivity to the semiconductor layer at a level above the conductivity possible with any one of the impurities alone, due to the detrimental effects that would be created by increasing the concentration of any one impurity beyond its degradation concentration.
    Type: Grant
    Filed: May 11, 2004
    Date of Patent: April 27, 2010
    Assignee: RF Micro Devices, Inc.
    Inventors: Matthew L. Seaford, Arthur E. Geiss, Wayne Lewis, Larry W. Kapitan, Thomas J. Rogers
  • Semiconductor layer
    Publication number: 20040209434
    Abstract: The present invention provides a highly doped semiconductor layer.
    Type: Application
    Filed: May 11, 2004
    Publication date: October 21, 2004
    Applicant: RF MICRO DEVICES, INC.
    Inventors: Matthew L. Seaford, Arthur E. Geiss, Wayne Lewis, Larry W. Kapitan, Thomas J. Rogers
  • Highly conductive semiconductor layer having two or more impurities
    Patent number: 6750482
    Abstract: The present invention provides a highly doped semiconductor layer. More specifically, the present invention provides a semiconductor layer that includes at least two impurities. Each impurity is introduced at a level below its respective degradation concentration. In this manner, the two or more impurities provide an additive conductivity to the semiconductor layer at a level above the conductivity possible with any one of the impurities alone, due to the detrimental effects that would be created by increasing the concentration of any one impurity beyond its degradation concentration.
    Type: Grant
    Filed: April 30, 2002
    Date of Patent: June 15, 2004
    Assignee: RF Micro Devices, Inc.
    Inventors: Matthew L. Seaford, Arthur E. Geiss, Wayne Lewis, Larry W. Kapitan, Thomas J. Rogers
  • Semiconductor layer
    Publication number: 20030201460
    Abstract: The present invention provides a highly doped semiconductor layer.
    Type: Application
    Filed: April 30, 2002
    Publication date: October 30, 2003
    Inventors: Matthew L. Seaford, Arthur E. Geiss, Wayne Lewis, Larry W. Kapitan, Thomas J. Rogers
  • Solid state magnetic field sensor method
    Patent number: 6117697
    Abstract: A method for making a magnetoresistive sensing device including depositing an ultrathin active film responsive to changes in magnetic field energy onto a compliant layer of periodic table group III-V semiconductor material on a semiconductor substrate wafer, the compliant layer being capable of retaining strain energy resulting from the layering semiconductor materials with different lattice constants. This method produces a battery operable ultrathin device highly sensitive to changes in magnetic field flux.
    Type: Grant
    Filed: July 27, 1998
    Date of Patent: September 12, 2000
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Matthew L. Seaford, Kurt G. Eyink, David H. Tomich, William V. Lampert