Abstract: Disclosed is a linear voltage regulator with an input terminal, an output terminal, a pass device electrically connected to the input terminal and the output terminal, and an error amplifier that controls the output voltage at the output terminal by controlling the voltage drop across the pass device. The disclosed linear voltage regulator includes a light emitting section electrically connected in series with the pass device between the input terminal and the output terminal and a photovoltaic section, electrically connected to the output terminal, that receives photons emitted by the light emitting section and outputs a current to output terminal. The disclosed linear voltage regulator is more efficient than conventional linear voltage regulators because, unlike in those convention linear voltage regulators, the voltage drop across the pass device is only a fraction of the total potential difference between the input terminal and the output terminal.

Abstract: Disclosed is a linear voltage regulator with an input terminal, an output terminal, a pass device electrically connected to the input terminal and the output terminal, and an error amplifier that controls the output voltage at the output terminal by controlling the voltage drop across the pass device. The disclosed linear voltage regulator includes a light emitting section electrically connected in series with the pass device between the input terminal and the output terminal and a photovoltaic section, electrically connected to the output terminal, that receives photons emitted by the light emitting section and outputs a current to output terminal. The disclosed linear voltage regulator is more efficient than conventional linear voltage regulators because, unlike in those convention linear voltage regulators, the voltage drop across the pass device is only a fraction of the total potential difference between the input terminal and the output terminal.

Abstract: A broken-gap tunnel junction device comprising a thin quantum well (QW) layer situated at the interface between adjacent highly doped n-type and p-type semiconductor layers, wherein the QW layer has a type-III broken-gap energy band alignment with respect to one or more of the surrounding semiconductor layers such that a conduction band of the QW layer is below the valence band of one or more of the n-type and p-type bulk semiconductor layers.

Abstract: A computationally efficient method for building a superlattice structure that improves an optoelectronic device performance characteristic that depends on fundamental superlattice material properties such as absorption coefficient ?(?), radiative efficiency Rsp and/or electron density n.

Abstract: A multijunction (MJ) solar cell grown on an InP substrate using materials that are lattice-matched to InP. In an exemplary three-junction embodiment, the top cell is formed from In1-xAlxAs1-ySby (with x and y adjusted so as to achieve lattice-matching with InP, hereafter referred to as InAlAsSb), the middle cell from In1-a-bGaaAlbAs (with a and b adjusted so as to achieve lattice-matching with InP, hereafter referred to as InGaAlAs), and the bottom cell also from InGaAlAs, but with a much lower Al composition, which in some embodiments can be zero so that the material is InGaAs. Tunnel junctions (TJs) connect the junctions and allow photo-generated current to flow. In an exemplary embodiment, an InAlAsSb TJ connects the first and second junctions, while an InGaAlAs TJ connects the second and third junctions.

Abstract: A multijunction (MJ) solar cell grown on an InP substrate using materials that are lattice-matched to InP. In an exemplary three-junction embodiment, the top cell is formed from In1-xAlxAs1-ySby (with x and y adjusted so as to achieve lattice-matching with InP, hereafter referred to as InAlAsSb), the middle cell from In1-a-bGaaAlbAs (with a and b adjusted so as to achieve lattice-matching with InP, hereafter referred to as InGaAlAs), and the bottom cell also from InGaAlAs, but with a much lower Al composition, which in some embodiments can be zero so that the material is InGaAs. Tunnel junctions (TJs) connect the junctions and allow photo-generated current to flow. In an exemplary embodiment, an InAlAsSb TJ connects the first and second junctions, while an InGaAlAs TJ connects the second and third junctions.