Abstract: A patterned transparent conductor includes a substrate and additives at least partially embedded into at least one surface of the substrate and localized adjacent to the surface according to a pattern to form higher sheet conductance portions. The higher sheet conductance portions are laterally adjacent to lower sheet conductance portions.

Abstract: Active or functional additives are embedded into surfaces of host materials for use as components in a variety of electronic or optoelectronic devices, including solar devices, smart windows, displays, and so forth. Resulting surface-embedded device components provide improved performance, as well as cost benefits arising from their compositions and manufacturing processes.

Abstract: Electrically conductive or semiconducting additives are embedded into surfaces of host materials for use in a variety of applications and devices. Resulting surface-embedded structures exhibit improved performance, as well as cost benefits arising from their compositions and manufacturing processes.

Abstract: Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, the method comprises of transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be microflakes that have a high aspect ratio. The resulting dense film formed from microflakes are particularly useful in forming photovoltaic devices.

Abstract: A patterned transparent conductor includes a substrate and additives at least partially embedded into at least one surface of the substrate and localized adjacent to the surface according to a pattern to form higher sheet conductance portions. The higher sheet conductance portions are laterally adjacent to lower sheet conductance portions.

Abstract: Methods and articles of manufacture for storage and shipping of nanowires are disclosed. One disclosed method includes: (a) providing a nanowire suspension including nanowires suspended in a liquid; and (b) disposing the nanowire suspension in a container for storage and shipping, where the container is configured to inhibit agglomeration of nanowires from the nanowire suspension.

Abstract: Methods and articles of manufacture for storage and shipping of nanowires are disclosed. One disclosed method includes: (a) providing a nanowire suspension including nanowires suspended in a liquid; and (b) disposing the nanowire suspension in a container for storage and shipping, where the container is configured to inhibit agglomeration of nanowires from the nanowire suspension.

Abstract: CIGS absorber layers fabricated using coated semiconducting nanoparticles and/or quantum dots are disclosed. Core nanoparticles and/or quantum dots containing one or more elements from group 13 and/or IIIA and/or VIA may be coated with one or more layers containing elements group IB, IIIA or VIA. Using nanoparticles with a defined surface area, a layer thickness could be tuned to give the proper stoichiometric ratio, and/or crystal phase, and/or size, and/or shape. The coated nanoparticles could then be placed in a dispersant for use as an ink, paste, or paint. By appropriate coating of the core nanoparticles, the resulting coated nanoparticles can have the desired elements intermixed within the size scale of the nanoparticle, while the phase can be controlled by tuning the stoichiometry, and the stoichiometry of the coated nanoparticle may be tuned by controlling the thickness of the coating(s).

Abstract: A patterned transparent conductor includes a substrate and additives at least partially embedded into at least one surface of the substrate and localized adjacent to the surface according to a pattern to form higher sheet conductance portions. The higher sheet conductance portions are laterally adjacent to lower sheet conductance portions.

Abstract: Active or functional additives are embedded into surfaces of host materials for use as components in a variety of electronic or optoelectronic devices, including solar devices, smart windows, displays, and so forth. Resulting surface-embedded device components provide improved performance, as well as cost benefits arising from their compositions and manufacturing processes.

Abstract: Methods and articles of manufacture for storage and shipping of nanowires are disclosed. One disclosed method includes: (a) providing a nanowire suspension including nanowires suspended in a liquid; and (b) disposing the nanowire suspension in a container for storage and shipping, where the container is configured to inhibit agglomeration of nanowires from the nanowire suspension.

Abstract: Methods and devices are provided for improved photovoltaic devices. Non-vacuum deposition of transparent conductive electrodes in a roll-to-roll manufacturing environment is disclosed. In one embodiment, a method is provided for forming a photovoltaic device. The method comprises processing a precursor layer in one or more steps to form a photovoltaic absorber layer; depositing a smoothing layer to fill gaps and depression in the absorber layer to reduce a roughness of the absorber layer; adding an insulating layer over the smooth layer; and forming a web-like layer of conductive material over the insulating layer. By way of nonlimiting example, the web-like layer of conductive material comprises a plurality of carbon nanotubes. In some embodiments, the absorber layer is a group IB-IIIA-VIA absorber layer.

Abstract: Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices.

Abstract: Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, the method comprises of transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be microflakes that have a high aspect ratio. The resulting dense film formed from microflakes is particularly useful in forming photovoltaic devices.

Abstract: Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment, a method is provided for creating solid alloy particles. The method may include providing a first material containing at least one alloy comprising of: a) a group IIIA element, b) at least one group IB, IIIA, and/or VIA element different from the group IIIA element of a), and c) a group IA-based material. The group IA-based material may be included in an amount sufficient so that no liquid phase of the alloy is present in a temperature range between room temperature and a deposition temperature higher than room temperature, wherein the group IIIA element is otherwise liquid in that temperature range.

Abstract: Methods and articles of manufacture for storage and shipping of nanowires are disclosed. One disclosed method includes: (a) providing a nanowire suspension including nanowires suspended in a liquid; and (b) disposing the nanowire suspension in a container for storage and shipping, where the container is configured to inhibit agglomeration of nanowires from the nanowire suspension.

Abstract: A transparent conductor includes a film of a conductive ceramic and conductive additives at least partially incorporated into the film and localized within a region of the film. A thickness of the region is less than an overall thickness of the film, and at least one of the conductive additives has an aspect ratio of at least 3. The transparent conductor has a sheet resistance that is less than an intrinsic sheet resistance of the film.

Abstract: Methods and devices are provided for improved photovoltaic devices. Non-vacuum deposition of transparent conductive electrodes in a roll-to-roll manufacturing environment is disclosed. In one embodiment, a method is provided for forming a photovoltaic device. The method comprises processing a precursor layer in one or more steps to form a photovoltaic absorber layer; depositing a smoothing layer to fill gaps and depression in the absorber layer to reduce a roughness of the absorber layer; adding an insulating layer over the smooth layer; and forming a web-like layer of conductive material over the insulating layer. By way of nonlimiting example, the web-like layer of conductive material comprises a plurality of carbon nanotubes. In some embodiments, the absorber layer is a group IB-IIIA-VIA absorber layer.

Abstract: A transparent conductor includes a film of a conductive ceramic. Additives are at least partially incorporated into the film. The additives are at least one of electrically conductive and semiconducting, and at least one of the additives has an aspect ratio of at least 3.

Abstract: Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment of the present invention, a method is described comprising of providing a first material comprising an alloy of a) a group IIIA-based material and b) at least one other material. The material may be included in an amount sufficient so that no liquid phase of the alloy is present within the first material in a temperature range between room temperature and a deposition or pre-deposition temperature higher than room temperature, wherein the group IIIA-based material is otherwise liquid in that temperature range. The other material may be a group IA material. A precursor material may be formulated comprising a) particles of the first material and b) particles containing at least one element from the group consisting of: group IB, IIIA, VIA element, alloys containing any of the foregoing elements, or combinations thereof.