Abstract: A hunting apparatus that includes a hunting blind adapted to extend around a ladder stand. The hunting blind includes a first panel member and second panel member that are attached to each other at peripheries thereof. The first and second panel members are made of a stretchable material and cooperate with each other such that the hunting blind is opaque when extended around the ladder stand. The hunting blind forms at least one arcuate panel section when the hunting blind is extended around the ladder stand.

Abstract: A blind assembly may include a panel member having an upper portion, an attachment member, and a first cord having a first end and a second end. The attachment member may be attached to the panel member at the upper portion thereof. The first end of the first cord is attached to the attachment member at the upper portion of the panel member and the second end is configured to be attached to a first stake positioned in a ground surface. A pathway is formed at the upper portion of the panel member once the first end of the first cord is attached to the attachment member and the second end of the first cord is attached to the first stake.

Abstract: A blind assembly may include a panel member having an upper portion, an attachment member, and a first cord having a first end and a second end. The attachment member may be attached to the panel member at the upper portion thereof. The first end of the first cord is attached to the attachment member at the upper portion of the panel member and the second end is configured to be attached to a first stake positioned in a ground surface. A pathway is formed at the upper portion of the panel member once the first end of the first cord is attached to the attachment member and the second end of the first cord is attached to the first stake.

Abstract: The present disclosure provides an apparatus comprising a flexible polymeric sheet having first and second sides and an anchoring device including a tab element, a pressure-sensitive adhesive element, and a stake element.

Abstract: The present disclosure provides a waterslide that may include a flexible slide portion and an anchor portion. The anchor portion may secure the slide portion to a surface and may include a tab element, a stake element, and an adhesive element.

Abstract: The present disclosure provides a waterslide that may include a flexible slide portion and an anchor portion. The anchor portion may secure the slide portion to a surface and may include a tab element, a stake element, and an adhesive element.

Abstract: A method, computer readable medium, and apparatus that inspects data includes isolating retrieved target data within a protected construct with the data inspection processing apparatus. The security software is isolated such that the security software is able to access the target data within the protected construct with the data inspection processing apparatus. The data inspection processing apparatus scans the isolated target data with the isolated security software. The data inspection processing apparatus reports whether one or more security threats have been identified from the scan of the isolated retrieved target data.

Abstract: According to an example embodiment, a semiconductor device having a back side and a circuit side opposite the back side is analyzed. The semiconductor device includes bulk silicon in the back side and also includes epitaxial silicon. An ion gas comprising SF6 and N2 is directed at a target region in the back side. Using the ion gas, the target region in the back side is selectively etched using reactive ion etching (RIE) and an exposed region is formed. The etching is selective to the bulk silicon. When the etching process encounters the epitaxial silicon, the etch rate slows and is used as an endpoint indicator of the selective etching process. Once the etching process is stopped, the circuitry is accessed via the exposed region.

Abstract: Current reactive ion etching (RIE) techniques are not applicable to back side etching of semiconductor devices. According to an example embodiment, the present invention is directed to a method for analyzing a semiconductor device having a back side and a circuit side opposite the back side. An ion gas including SF6 and N2 is directed at a target region in the back side. Using the ion gas, the target region is etched using reactive ion etching (RIE). An exposed region is formed, and circuitry in the device is accessed via the exposed region. The use of the ion gas enables back side RIE that is capable of producing an etched surface that is usable for back side access.