Abstract: Use of Keplerate type polyoxomolybdates of the general structure Mo72M30, wherein M is selected from the group consisting of Fe, Cr, V or Mo2, for decontaminating aqueous media (water) from inorganic and organic pollutants.

Abstract: Use of Keplerate type polyoxomolybdates of the general structure Mo72M30, wherein M is selected from the group consisting of Fe, Cr, V or Mo2, for decontaminating aqueous media (water) from inorganic and organic pollutants

Abstract: A catalyst for the hydroformylation of at least one olefin, having a ligand fo the general formula (1) —R1, R2, R3 selected from the group including substituted and non-substituted alkyl, substituted and non-substituted aryl, substituted and non-substituted alkenyl, substituted and non-substituted alkinyl, substituted and non-substituted cycloalkyl, and substituted and non-substituted heterocycles, wherein R1, R2 and R3 can each be the same or different, L is selected from a group having a sandwich complex, an oxygen group, substituted and non-substituted alkylene or heterocycles, and substituted aryl or heteroaryl; and aryl and heteroaryl is each substituted with groups which contain at least two heteroatoms and are coupled to the Si via the at least two heteroatoms of the substituents, —n=1-10, preferably 1-5, particularly preferably 1, 2, or 3; and the ligand is coupled to the metal M from the group VIIIb of the periodic table of elements via the Si group.

Abstract: The invention relates to a method for producing a metal chalcogenide thin film electrode, comprising the steps: (a) contacting a metal or metal oxide with an elementary halogen in a non-aqueous solvent, producing a metal halide compound in the solution, (b) applying a negative electric voltage to an electrically conducting or semiconducting substrate which is in contact with the solution from step (a), and (c) during and/or after step (b) contacting the substrate with an elementary chalcogen forming a metal chalcogenide layer on the substrate. The invention also relates to a metal chalcogenide thin film electrode which can be produced by the method and its use as an anode for releasing oxygen during (photo)electrochemical water splitting.

Abstract: A catalyst for the hydroformylation of at least one olefin, having a ligand fo the general formula (1)—R1, R2, R3 selected from the group including substituted and non-substituted alkyl, substituted and non-substituted aryl, substituted and non-substituted alkenyl, substituted and non-substituted alkinyl, substituted and non-substituted cycloalkyl, and substituted and non-substituted heterocycles, wherein R1, R2 and R3 can each be the same or different, L is selected from a group having a sandwich complex, an oxygen group, substituted and non-substituted alkylene or heterocycles, and substituted aryl or heteroaryl; and aryl and heteroaryl is each substituted with groups which contain at least two heteroatoms and are coupled to the Si via the at least two heteroatoms of the substituents, ?n=1-10, preferably 1-5, particularly preferably 1, 2, or 3; and the ligand is coupled to the metal M from the group VIIIb of the periodic table of elements via the Si group.

Abstract: The invention relates to an electrode (10) for photoelectric catalysis, comprising a supporting layer (1) on which a catalytic layer (2) is arranged, which comprises particles (3) from a first semiconductor material, and a method for the production of said electrode and a solar cell with said electrode. It is provided that the catalytic layer (2) further features a matrix (4) consisting of a second semiconductor material, which at least partially surrounds the particles.

Abstract: The invention relates to a method for producing a metal chalcogenide thin film electrode, comprising the steps: (a) contacting a metal or metal oxide with an elementary halogen in a non-aqueous solvent, producing a metal halide compound in the solution, (b) applying a negative electric voltage to an electrically conducting or semiconducting substrate which is in contact with the solution from step (a), and (c) during and/or after step (b) contacting the substrate with an elementary chalcogen forming a metal chalcogenide layer on the substrate. The invention also relates to a metal chalcogenide thin film electrode which can be produced by the method and its use as an anode for releasing oxygen during (photo)electrochemical water splitting.

Abstract: The present invention relates to formulations comprising a) at least two different ZnO cubanes of which at least one ZnO cubane is present in solid form under SATP conditions and at least one ZnO cubane is present in liquid form under SATP conditions, and b) at least one solvent, to processes for producing semiconductive ZnO layers from these formulations, to the use of the formulations for producing electronic components and to the electronic components themselves.

Abstract: Transparent, electrically conductive layer, a process for producing the layer and its use, wherein the layer is based on at least one compound of the formula 1 wherein the substituents are as defined.

Abstract: The present invention relates to formulations comprising a) at least two different ZnO cubanes of which at least one ZnO cubane is present in solid form under SATP conditions and at least one ZnO cubane is present in liquid form under SATP conditions, and b) at least one solvent, to processes for producing semiconductive ZnO layers from these formulations, to the use of the formulations for producing electronic components and to the electronic components themselves.

Abstract: Transparent, electrically conductive layer, a process for producing the layer and its use, wherein the layer is based on at least one compound of the formula 1 wherein the substituents are as defined.

Abstract: Transparent, electrically conductive layer, a process for producing the layer and its use, wherein the layer is based on at least one compound of the formula 1 wherein the substituents are as defined.

Abstract: Transparent, electrically conductive layer, a process for producing the layer and its use, wherein the layer is based on at least one compound of the formula 1 wherein the substituents are as defined.