Patents by Inventor Matthias Heuer
Matthias Heuer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220073361Abstract: The invention relates to a process for the production of silicon and alumina Aluminium is contacted with a molten slag of a calcium oxide and SiO2 under conditions facilitating an aluminothermic reaction, thereby forming silicon and an aluminate slag in two phases which are separated. The aluminate slag is converted to alumina and calcium oxide, which is re-fed in the reaction. The aluminium is provided by melting of aluminium scrap or a combination of different aluminium alloys at a temperature of 700 to 1000° C. The primary aluminium melt is adjusted to a content of 8 to 14% of silicon and then cooled to below 660° C., whereby precipitates are formed, and high purity aluminium is obtained to be introduced into the reaction.Type: ApplicationFiled: October 23, 2019Publication date: March 10, 2022Applicant: SIQAL UG (HAFTUNGSBESCHRÄNKT)Inventors: Til BARTEL, Matthias HEUER
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Patent number: 10457559Abstract: The invention relates to a method for purifying halogenated oligosilanes in the form of a pure compound or a mixture of compounds with respectively at least one direct Si—Si bond, the substituents thereof being exclusively made from halogen or from halogen and hydrogen and in the composition thereof, the atomic ratio of the substituents:silicon is at least 3:2, by the action of at least one purification agent on the halogenated oligosilane and by isolating the halogenated oligosilanes with improved purity. According to prior art, halogenated monosilanes such as HSiCl3 are purified by treating with organic compounds, preferably polymers, containing amino groups, and are separated from said mixtures. Based on the contained amino groups, said method can not be used for halogenated oligosilanes as the secondary reactions lead to a decomposition of the products. The novel method is used to provide the desired products in a high yield and purity without using the amino groups.Type: GrantFiled: September 7, 2015Date of Patent: October 29, 2019Assignee: PSC POLYSILANE CHEMICALS GMBHInventors: Christian Bauch, Sven Holl, Matthias Heuer
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Publication number: 20170247260Abstract: 1. The present invention relates to a method for the purification of halogenated oligosilanes as a pure compound or mixture of compounds each having at least one direct Si—Si bond, the substituents thereof being exclusively halogen or halogen and hydrogen, and the composition thereof being an atom ratio of substituent:silicon of at least 3:2, by the action of at least one purification agent on the halogenated oligosilane and isolation of the halogenated oligosilane with improved purity. 2.1. In the prior art, halogenated monosilanes such as HSiCl3 are purified by treatment with preferably polymeric organic compounds containing amino groups, and are separated out from these mixtures. This method cannot be used for halogenated oligosilanes because of the contained amino groups, since secondary reactions would lead to decomposition of the products. The new method should provide the desired products in high yield and purity without amino groups being used. 2.2.Type: ApplicationFiled: September 7, 2015Publication date: August 31, 2017Applicant: PSC POLYSILAND CHEMICALS GMBHInventors: CHRISTIAN BAUCH, SVEN HOLL, MATTHIAS HEUER
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Patent number: 9327987Abstract: The invention describes a process for removing nonmetallic impurities from metallurgical silicon. A melt is produced from metallurgical silicon and halide-containing silicon. As a result, the impurities are sublimed out and removed from the melt in the form of nonmetal halides. Compared with the known process, in which gaseous halogen is blown through an Si melt, the novel process can be carried out in a particularly simple and efficient manner.Type: GrantFiled: July 29, 2009Date of Patent: May 3, 2016Assignee: SPAWNT PRIVATE S.A.R.L.Inventors: Seyed-Javad Mohsseni-Ala, Christian Bauch, Rumen Deltschew, Thoralf Gebel, Gerd Lippold, Matthias Heuer
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Publication number: 20150243569Abstract: Techniques for controlling resistivity in the formation of a silicon ingot from compensated feedstock silicon material prepares a compensated, upgraded metallurgical silicon feedstock for being melted to form a silicon melt. The compensated, upgraded metallurgical silicon feedstock provides semiconductor predominantly of a single type (p-type or n-type) for which the process assesses the concentrations of boron and phosphorus and adds a predetermined amount of boron, phosphorus, aluminum and/or gallium. The process further melts the silicon feedstock with the boron, phosphorus, aluminum and/or gallium to form a molten silicon solution from which to perform directional solidification and maintains the homogeneity of the resistivity of the silicon throughout the ingot. A balanced amount of phosphorus can be optionally added to the aluminum and/or gallium. Resistivity may also be measured repeatedly during ingot formation, and additional dopant may be added in response, either repeatedly or continuously.Type: ApplicationFiled: February 27, 2015Publication date: August 27, 2015Inventors: Fritz G. Kirscht, Marcin Walerysiak, Matthias Heuer, Anis Jouini, Kamel Ounadjela
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Patent number: 8968467Abstract: Techniques for controlling resistivity in the formation of a silicon ingot from compensated feedstock silicon material prepares a compensated, upgraded metallurgical silicon feedstock for being melted to form a silicon melt. The compensated, upgraded metallurgical silicon feedstock provides semiconductor predominantly of a single type (p-type or n-type) for which the process assesses the concentrations of boron and phosphorus and adds a predetermined amount of boron, phosphorus, aluminum and/or gallium. The process further melts the silicon feedstock with the boron, phosphorus, aluminum and/or gallium to form a molten silicon solution from which to perform directional solidification and maintains the homogeneity of the resistivity of the silicon throughout the ingot. A balanced amount of phosphorus can be optionally added to the aluminum and/or gallium. Resistivity may also be measured repeatedly during ingot formation, and additional dopant may be added in response, either repeatedly or continuously.Type: GrantFiled: November 13, 2009Date of Patent: March 3, 2015Assignee: Silicor Materials Inc.Inventors: Fritz Kirscht, Marcin Walerysiak, Matthias Heuer, Anis Jouini, Kamel Ounadjela
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Publication number: 20150020729Abstract: Techniques for the formation of silicon ingots and crystals using silicon feedstock of various grades are described. A common feature is adding a predetermined amount of germanium to the melt and performing a crystallization to incorporate germanium into the silicon lattice of respective crystalline silicon materials. Such incorporated germanium results in improvements of respective silicon material characteristics, including increased material strength and improved electrical properties. This leads to positive effects at applying such materials in solar cell manufacturing and at making modules from those solar cells.Type: ApplicationFiled: June 23, 2014Publication date: January 22, 2015Inventors: Fritz G. Kirscht, Matthias Heuer, Martin Kaes, Kamel Ounadjela
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Patent number: 8882912Abstract: Techniques for the formation of a silicon ingot using a low-grade silicon feedstock include forming within a crucible device a molten silicon from a low-grade silicon feedstock and performing a directional solidification of the molten silicon to form a silicon ingot within the crucible device. The directional solidification forms a generally solidified quantity of silicon and a generally molten quantity of silicon. The method and system include removing from the crucible device at least a portion of the generally molten quantity of silicon while retaining within the crucible device the generally solidified quantity of silicon. Controlling the directional solidification of the generally solidified quantity of silicon, while removing the more contaminated molten silicon, results in a silicon ingot possessing a generally higher grade of silicon than the low-grade silicon feedstock.Type: GrantFiled: February 25, 2011Date of Patent: November 11, 2014Assignee: Silicor Materials Inc.Inventors: Fritz Kirscht, Vera Abrosimova, Matthias Heuer, Dieter Linke, Jean Patrice Rakotoniana, Kamel Ounadjela
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Patent number: 8758507Abstract: Techniques for the formation of silicon ingots and crystals using silicon feedstock of various grades are described. A common feature is adding a predetermined amount of germanium to the melt and performing a crystallization to incorporate germanium into the silicon lattice of respective crystalline silicon materials. Such incorporated germanium results in improvements of respective silicon material characteristics, including increased material strength and improved electrical properties. This leads to positive effects at applying such materials in solar cell manufacturing and at making modules from those solar cells.Type: GrantFiled: November 24, 2010Date of Patent: June 24, 2014Assignee: Silicor Materials Inc.Inventors: Fritz G. Kirscht, Matthias Heuer, Martin Kaes, Kamel Ounadjela
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Patent number: 8547121Abstract: A quality control process for determining the concentrations of boron and phosphorous in a UMG-Si feedstock batch is provided. A silicon test ingot is formed by the directional solidification of molten UMG-Si from a UMG-Si feedstock batch. The resistivity of the silicon test ingot is measured from top to bottom. Then, the resistivity profile of the silicon test ingot is mapped. From the resistivity profile of the silicon test ingot, the concentrations of boron and phosphorous of the UMG-Si silicon feedstock batch are calculated. Additionally, multiple test ingots may be grown simultaneously, with each test ingot corresponding to a UMG-Si feedstock batch, in a multi-crucible crystal grower.Type: GrantFiled: April 29, 2010Date of Patent: October 1, 2013Assignee: Silicor Materials Inc.Inventors: Kamel Ounadjela, Marcin Walerysiak, Anis Jouini, Matthias Heuer, Omar Sidelkheir, Alain Blosse, Fritz Kirscht
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Publication number: 20130171052Abstract: The invention describes a process for removing nonmetallic impurities from metallurgical silicon. A melt is produced from metallurgical silicon and halide-containing silicon. As a result, the impurities are sublimed out and removed from the melt in the form of nonmetal halides. Compared with the known process, in which gaseous halogen is blown through an Si melt, the novel process can be carried out in a particularly simple and efficient manner.Type: ApplicationFiled: July 29, 2009Publication date: July 4, 2013Inventors: Seyed-Javad Mohsseni-Ala, Christian Bauch, Rumen Deltschew, Thoralf Gebel, Gerd Lippold, Matthias Heuer, Fritz Kirscht, Kamel Ounadjela
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Publication number: 20110211995Abstract: Techniques for the formation of a silicon ingot using a low-grade silicon feedstock include forming within a crucible device a molten silicon from a low-grade silicon feedstock and performing a directional solidification of the molten silicon to form a silicon ingot within the crucible device. The directional solidification forms a generally solidified quantity of silicon and a generally molten quantity of silicon. The method and system include removing from the crucible device at least a portion of the generally molten quantity of silicon while retaining within the crucible device the generally solidified quantity of silicon. Controlling the directional solidification of the generally solidified quantity of silicon, while removing the more contaminated molten silicon, results in a silicon ingot possessing a generally higher grade of silicon than the low-grade silicon feedstock.Type: ApplicationFiled: February 25, 2011Publication date: September 1, 2011Applicant: Calisolar, Inc.Inventors: Fritz Kirscht, Vera Abrosimova, Matthias Heuer, Dieter Linke, Jean Patrice Rakotoniana, Kamel Ounadjela
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Patent number: 7955433Abstract: Techniques for the formation of a silicon ingot using a low-grade silicon feedstock include forming within a crucible device a molten silicon from a low-grade silicon feedstock and performing a directional solidification of the molten silicon to form a silicon ingot within the crucible device. The directional solidification forms a generally solidified quantity of silicon and a generally molten quantity of silicon. The method and system include removing from the crucible device at least a portion of the generally molten quantity of silicon while retaining within the crucible device the generally solidified quantity of silicon. Controlling the directional solidification of the generally solidified quantity of silicon, while removing the more contaminated molten silicon, results in a silicon ingot possessing a generally higher grade of silicon than the low-grade silicon feedstock.Type: GrantFiled: July 26, 2007Date of Patent: June 7, 2011Assignee: Calisolar, Inc.Inventors: Fritz Kirscht, Vera Abrosimova, Matthias Heuer, Dieter Linke, Jean Patrice Rakotoniana, Kamel Ounadjela
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Publication number: 20110126758Abstract: Techniques for the formation of silicon ingots and crystals using silicon feedstock of various grades are described. A common feature is adding a predetermined amount of germanium to the melt and performing a crystallization to incorporate germanium into the silicon lattice of respective crystalline silicon materials. Such incorporated germanium results in improvements of respective silicon material characteristics, including increased material strength and improved electrical properties. This leads to positive effects at applying such materials in solar cell manufacturing and at making modules from those solar cells.Type: ApplicationFiled: November 24, 2010Publication date: June 2, 2011Applicant: Calisolar, Inc.Inventors: Fritz G. Kirscht, Matthias Heuer, Martin Kaes, Kamel Ounadjela
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Patent number: 7887633Abstract: Techniques for the formation of silicon ingots and crystals using silicon feedstock of various grades are described. Common feature is adding a predetermined amount of germanium to the melt and performing a crystallization to incorporate germanium into the silicon lattice of respective crystalline silicon materials. Such incorporated germanium results in improvements of respective silicon material characteristics, mainly increased material strength. This leads to positive effects at applying such materials in solar cell manufacturing and at making modules from those solar cells. A silicon material with a germanium concentration in the range (50-200) ppmw demonstrates an increased material strength, where best practical ranges depend on the material quality generated.Type: GrantFiled: June 16, 2008Date of Patent: February 15, 2011Assignee: Calisolar, Inc.Inventors: Fritz Kirscht, Vera Abrosimova, Matthias Heuer, Anis Jouini, Dieter Linke, Martin Kaes, Jean Patrice Rakotoniaina, Kamel Ounadjela
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Publication number: 20100327890Abstract: A quality control process for determining the concentrations of boron and phosphorous in a UMG-Si feedstock batch is provided. A silicon test ingot is formed by the directional solidification of molten UMG-Si from a UMG-Si feedstock batch. The resistivity of the silicon test ingot is measured from top to bottom. Then, the resistivity profile of the silicon test ingot is mapped. From the resistivity profile of the silicon test ingot, the concentrations of boron and phosphorous of the UMG-Si silicon feedstock batch are calculated. Additionally, multiple test ingots may be grown simultaneously, with each test ingot corresponding to a UMG-Si feedstock batch, in a multi-crucible crystal grower.Type: ApplicationFiled: April 29, 2010Publication date: December 30, 2010Applicant: CaliSolar, Inc.Inventors: Kamel Ounadjela, Marcin Walerysiak, Anis Jouini, Matthias Heuer, Omar Sidelkheir, Alain Blosse, Fritz Kirscht
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Publication number: 20100310445Abstract: A process control method for UMG-Si purification by performing a directional solidification of molten UMG-Si to form a silicon ingot is described. The ingot is divided into bricks and the resistivity profile of each silicon brick is mapped. A crop line for removing the impurities concentrated and captured in the ingot during the directional solidification is calculated based on the resistivity map. The concentrated impurities are then removed by cropping each brick along that brick's calculated crop line.Type: ApplicationFiled: February 10, 2010Publication date: December 9, 2010Applicant: CaliSolar, Inc.Inventors: Kamel Ounadjela, Marcin Walerysiak, Anis Jouini, Matthias Heuer, Omar Sidelkheir, Alain Blosse, Fritz Kirscht
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Publication number: 20100258768Abstract: Techniques for controlling resistivity in the formation of a silicon ingot from compensated feedstock silicon material prepares a compensated, upgraded metallurgical silicon feedstock for being melted to form a silicon melt. The compensated, upgraded metallurgical silicon feedstock provides semiconductor predominantly of a single type (p-type or n-type) for which the process assesses the concentrations of boron and phosphorus and adds a predetermined amount of boron, phosphorus, aluminum and/or gallium. The process further melts the silicon feedstock with the boron, phosphorus, aluminum and/or gallium to form a molten silicon solution from which to perform directional solidification and maintains the homogeneity of the resistivity of the silicon throughout the ingot. A balanced amount of phosphorus can be optionally added to the aluminum and/or gallium. Resistivity may also be measured repeatedly during ingot formation, and additional dopant may be added in response, either repeatedly or continuously.Type: ApplicationFiled: November 13, 2009Publication date: October 14, 2010Applicant: CALISOLAR, INC.Inventors: Fritz Kirscht, Marcin Walerysiak, Matthias Heuer, Anis Jouini, Kamel Ounadjela
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Publication number: 20100213406Abstract: The present invention relates to the internal gettering of impurities in semiconductors by metal alloy clusters. In particular, intermetallic clusters are formed within silicon, such clusters containing two or more transition metal species. Such clusters have melting temperatures below that of the host material and are shown to be particularly effective in gettering impurities within the silicon and collecting them into isolated, less harmful locations. Novel compositions for some of the metal alloy clusters are also described.Type: ApplicationFiled: April 14, 2010Publication date: August 26, 2010Applicant: The Regents of the University of CaliforniaInventors: Anthony Buonassisi, Matthias Heuer, Andrei A. Istratov, Matthew D. Pickett, Matthew A. Marcus, Eicke R. Weber
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Patent number: 7763095Abstract: The present invention relates to the internal gettering of impurities in semiconductors by metal alloy clusters. In particular, intermetallic clusters are formed within silicon, such clusters containing two or more transition metal species. Such clusters have melting temperatures below that of the host material and are shown to be particularly effective in gettering impurities within the silicon and collecting them into isolated, less harmful locations. Novel compositions for some of the metal alloy clusters are also described.Type: GrantFiled: June 5, 2006Date of Patent: July 27, 2010Assignee: The Regents of the University of CaliforniaInventors: Anthony Buonassisi, Matthias Heuer, Andrei A. Istratov, Matthew D. Pickett, Mathew A. Marcus, Eicke R. Weber