Abstract: The present disclosure generally relates to a system and a method for detecting a defect in a specimen. More particularly, the present disclosure relates to a lithography exposure system and a method for detecting a dispensing error in a wafer The present disclosure provides a system for detecting a defect in a specimen having a lithography exposure tool including a measurement unit and a stage, the measurement unit is configured to obtain topography data of the specimen placed on the stage by illumination of a surface of the specimen with an optical signal, and a processor configured to generate a statistical data from the topography data and produce a defect notification if the statistical data is outside of a control limit.

Abstract: Methods for in-die overlay reticle measurement and the resulting devices are disclosed. Embodiments include providing parallel structures in a first layer on a substrate; determining measurement sites, in a second layer above the first layer, void of active integrated circuit elements; forming overlay trenches, in the measurement sites and parallel to the structures, exposing sections of the structures, wherein each overlay trench is aligned over a structure and over spaces between the structure and adjacent structures; determining a trench center-of-gravity of an overlay trench; determining a structure center-of-gravity of a structure exposed in the overlay trench; and determining an overlay parameter based on a difference between the trench center-of-gravity and the structure center-of-gravity.

Abstract: Methods for in-die overlay reticle measurement and the resulting devices are disclosed. Embodiments include providing parallel structures in a first layer on a substrate; determining measurement sites, in a second layer above the first layer, void of active integrated circuit elements; forming overlay trenches, in the measurement sites and parallel to the structures, exposing sections of the structures, wherein each overlay trench is aligned over a structure and over spaces between the structure and adjacent structures; determining a trench center-of-gravity of an overlay trench; determining a structure center-of-gravity of a structure exposed in the overlay trench; and determining an overlay parameter based on a difference between the trench center-of-gravity and the structure center-of-gravity.

Abstract: Asymmetric heating and/or thermal expansion of a reticle or an image field is reduced. Embodiments include exposing a wafer with an actual image field (including a pattern for a chip layer) on a multilayer reticle, and performing a dummy exposure with another image field of the reticle. Other embodiments include exposing a wafer with a reticle area including both the actual and one or more other image fields of a multilayer reticle, sacrificing any die on the wafer that is exposed with substantial illumination with an image field other than the actual image field. Further embodiments include dummy exposures or enlargement of the illuminated reticle area of a single layer reticle with variation in pattern density between regions of the image field. Further embodiments include changing the image field geometry of a multilayer or single layer reticle.

Abstract: Asymmetric heating and/or thermal expansion of a reticle or an image field is reduced. Embodiments include exposing a wafer with an actual image field (including a pattern for a chip layer) on a multilayer reticle, and performing a dummy exposure with another image field of the reticle. Other embodiments include exposing a wafer with a reticle area including both the actual and one or more other image fields of a multilayer reticle, sacrificing any die on the wafer that is exposed with substantial illumination with an image field other than the actual image field. Further embodiments include dummy exposures or enlargement of the illuminated reticle area of a single layer reticle with variation in pattern density between regions of the image field. Further embodiments include changing the image field geometry of a multilayer or single layer reticle.

Abstract: A member with a cleaning surface for use in capturing particles in a lithographic apparatus is disclosed. The particles are captured by a plurality of projections which are arranged in a pattern. A sensor can be used to detect contaminant particles in the pattern.

Abstract: A member with a cleaning surface for use in capturing particles in a lithographic apparatus is disclosed. The particles are captured by a plurality of projections which are arranged in a pattern. A sensor can be used to detect contaminant particles in the pattern.