Abstract: An arrangement (1) for generating white light (5), having at least two light-emitting diodes, wherein the first diode (2) is designed to generate blue light, wherein a conversion element (4) is associated with the first diode, wherein the conversion element is designed to convert a part of the blue light from the first diode into green light, and wherein the conversion element is designed to convert a part of the blue light from the first diode into red light, wherein the second diode (3) is provided to emit red light.

Abstract: An optoelectronic semiconductor component including an optoelectronic semiconductor chip having a first surface, wherein the first surface is a radiation emission surface of the optoelectronic semiconductor chip, the semiconductor chip is embedded in a mold body, the first surface is elevated with respect to a top side of the mold body, and a reflective layer is arranged on the top side of the mold body.

Abstract: An optoelectronic semiconductor component includes an optoelectronic thin-film chip; and a thermally conductive and electrically insulating element, wherein both the thin-film chip and the element are embedded in a molded body, a top surface of the thin-film chip and a bottom surface of the element are not covered by the molded body, the top surface of the thin-film chip is approximately flush with a top surface of the molded body, the bottom surface of the element is approximately flush with a bottom surface of the molded body, the molded body includes a first embedded conductor structure and a second embedded conductor structure, and the first conductor structure and the second conductor structure extends to the bottom surface of the molded body.

Abstract: A method for producing optoelectronic semiconductor components and an optoelectronic semiconductor component are disclosed. In an embodiment the method includes: A) creating a blank by pultrusion from a glass melt, B) shaping the blank into a billet-shaped optical element with a longitudinal axis, the optical element having a mounting side and a light outlet side, C) producing conductor tracks on the mounting side, D) mounting a plurality of optoelectronic semiconductor chips on the mounting side of the optical element and connecting them to the conductor tracks and E) separating the optical element into the optoelectronic semiconductor components, wherein each optoelectronic semiconductor component comprises at least two of the semiconductor chips, and wherein at least steps A) to D) are performed in the stated sequence.

Abstract: An optoelectronic semiconductor body for emitting electromagnetic radiation from the front side with a semiconductor layer sequence and a first electrical contact layer, wherein the semiconductor layer sequence comprises at least one opening that penetrates fully through the semiconductor layer sequence in the direction from the front side to the rear side that is opposite the front side, the first electrical contact layer is arranged at the rear of the semiconductor body, a section of the first electrical contact layer extends from the rear side through the opening to the front side and covers a first sub-region of a front-side main face of the semiconductor layer sequence, and a second sub-region of the front-side main face is not covered by the first electrical contact layer.

Abstract: In at least one embodiment, the optoelectronic semiconductor component contains at least one chip support having electrical contact devices and also at least one optoelectronic semiconductor chip that is set up to produce radiation and that is mechanically and electrically mounted on the chip support. A component support is attached to the chip support. The semiconductor chip is situated in a recess in the component support. The component support is electrically insulated from the chip support and from the semiconductor chip. The component support is formed from a metal or from a metal alloy. On a top that is remote from the chip support, the component support is provided with a reflective coating.

Abstract: A light-emitting diode chip includes a semiconductor body including a radiation-generating active region, at least two contact locations electrically contacting the active region, a carrier and a connecting medium arranged between the carrier and the semiconductor body, wherein the semiconductor body includes roughening on outer surfaces facing the carrier, the semiconductor body mechanically connects to the carrier by the connecting medium, the connecting medium locally directly contacts the semiconductor body and the carrier, and the at least two contact locations are arranged on the upper side of the semiconductor body facing away from the carrier.

Abstract: The invention relates to a semiconductor component (1) comprising: a plurality of semiconductor chips (2), each having a semiconductor layer sequence (200) with an active region (20) for generating radiation; a radiation output side (10) that runs parallel to the active regions (20); a mounting side surface (11) which is provided for securing the semiconductor component, and which runs in a transverse or perpendicular direction to the radiation output side; a moulded body (4) which is shaped in places on the semiconductor chips, and which at least partially forms the mounting side surface; and a contact structure (50) which is arranged on the moulded body, and which connects at least two semiconductor chips of the plurality of semiconductor chips in an electrically conductive manner. The invention also relates to a lighting device (9) and to a method for producing a semiconductor component.

Abstract: The invention relates to a lighting means (1), comprising: an optical element (3), which has a main extension direction (Z), a radiation inlet surface (3a), and a radiation outlet surface (3b); and at least two light-emitting diodes (2), which each comprise at least one light-emitting diode chip (21) and a radiation passage surface (2a), which extends along a main extension plane (XZ); wherein the at least two lighting-emitting diodes (2) are arranged along the main extension direction (Z) of the optical element. (3), the radiation inlet surface (3a) of the optical element (3) faces the radiation passage surfaces (2a) of the at least two light-emitting diodes (2), the optical element (3) is formed as a solid body, the radiation inlet surface (3a) of the optical element (3) is flat or convexly curved, and the radiation outlet surface (3b) of the optical element (3) comprises at least one recess (4) in the optical element (3).

Abstract: The invention relates to an optoelectronic device (101), comprising: a semiconductor layer sequence (103) comprising an emitter layer (105) for emitting electromagnetic radiation, a converter (113) for converting electromagnetic radiation with a first wavelength into an electromagnetic radiation with a second wavelength which differs from the first wavelength, a scattering body (109) for scattering at least a part of the electromagnetic radiation emitted by the emitter layer (105) in the direction of the converter (113) in order to convert at least a part of the emitted electromagnetic radiation, wherein the scattering body (109) comprises a positive, temperature-dependent scattering cross-section and so, as the temperature increases, scattering of the electromagnetic radiation in the scattering body (109) in the direction of the converter can be increased. The invention also relates to a scattering body (109).

Abstract: A light-emitting arrangement includes a radiation-emitting semiconductor chip that, during operation, emits primary radiation at least from a main emission surface, a first conversion element that absorbs part of the primary radiation and emits secondary radiation, and a deflection element that causes a direction change for part of the primary radiation, wherein the first conversion element is arranged in a lateral direction next to the radiation-emitting semiconductor chip, the deflection element guides part of the primary radiation onto the first conversion element, and the light-emitting arrangement, in operation, emits mixed light including the primary radiation and the secondary radiation.

Abstract: A method for producing optoelectronic semiconductor components and an optoelectronic semiconductor component are disclosed. In an embodiment the method includes: A) creating a blank by pultrusion from a glass melt, B) shaping the blank into a billet-shaped optical element with a longitudinal axis, the optical element having a mounting side and a light outlet side, C) producing conductor tracks on the mounting side, D) mounting a plurality of optoelectronic semiconductor chips on the mounting side of the optical element and connecting them to the conductor tracks and E) separating the optical element into the optoelectronic semiconductor components, wherein each optoelectronic semiconductor component comprises at least two of the semiconductor chips, and wherein at least steps A) to D) are performed in the stated sequence.

Abstract: In at least one embodiment, a surface light source includes one or a more optoelectronic semiconductor chips having a radiation main side for generating a primary radiation. A scattering body is disposed downstream of the radiation main side along a main emission direction of the semiconductor chips. The scatting body is designed for scattering the primary radiation. A main emission direction of the scattering body is oriented obliquely with respect to the main emission direction of the semiconductor chip.

Abstract: The invention relates to an optoelectronic device (101), comprising: a semiconductor layer sequence (103) comprising an emitter layer (105) for emitting electromagnetic radiation, a converter (113) for converting electromagnetic radiation with a first wavelength into an electromagnetic radiation with a second wavelength which differs from the first wavelength, a scattering body (109) for scattering at least a part of the electromagnetic radiation emitted by the emitter layer (105) in the direction of the converter (113) in order to convert at least a part of the emitted electromagnetic radiation, wherein the scattering body (109) comprises a positive, temperature-dependent scattering cross-section and so, as the temperature increases, scattering of the electromagnetic radiation in the scattering body (109) in the direction of the converter can be increased. The invention also relates to a scattering body (109).

Abstract: The invention relates to a light-emitting semiconductor component, comprising—a first semiconductor body (1), which comprises an active zone (11) in which during the operation of the light-emitting semiconductor component electromagnetic radiation is generated, at least some of which leaves the first semiconductor body (1) through a radiation exit surface (1a), and—a second semiconductor body (2), which is suitable for converting the electromagnetic radiation into converted electromagnetic radiation having a longer wavelength, wherein—the first semiconductor body (1) and the second semiconductor body (2) are produced separately from each other,—the second semiconductor body (2) is electrically inactive, and—the second semiconductor body (2) is in direct contact with the radiation exit surface (1a) and is attached there to the first semiconductor body (1) without connecting means.

Abstract: A method of producing an optoelectronic semiconductor chip includes growing an optoelectronic semiconductor layer sequence on a growth substrate, forming an electrically insulating layer on a side of the optoelectronic semiconductor layer sequence facing away from the growth substrate by depositing particles of an electrically insulating material by an aerosol deposition method, and at least partly removing the growth substrate after forming the electrically insulating layer.

Abstract: An optoelectronic semiconductor component including an optoelectronic semiconductor chip having a first surface, wherein the first surface is a radiation emission surface of the optoelectronic semiconductor chip, the semiconductor chip is embedded in a mold body, the first surface is elevated with respect to a top side of the mold body, and a reflective layer is arranged on the top side of the mold body.

Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a first surface. The semiconductor chip is embedded in a mold body. The first surface is elevated with respect to a top side of the mold body. A reflective layer is arranged on the top side of the mold body.

Abstract: The invention relates to a light-emitting semiconductor component, comprising—a first semiconductor body (1), which comprises an active zone (11) in which during the operation of the light-emitting semiconductor component electromagnetic radiation is generated, at least some of which leaves the first semiconductor body (1) through a radiation exit surface (1a), and—a second semiconductor body (2), which is suitable for converting the electromagnetic radiation into converted electromagnetic radiation having a longer wavelength, wherein—the first semiconductor body (1) and the second semiconductor body (2) are produced separately from each other, —the second semiconductor body (2) is electrically inactive, and—the second semiconductor body (2) is in direct contact with the radiation exit surface (1a) and is attached there to the first semiconductor body (1) without connecting means.

Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor chip and an optical element. A connecting layer includes a transparent oxide arranged between the semiconductor chip and the optical element. The connecting layer directly adjoins the semiconductor chip and the optical element and fixes the optical element on the semiconductor chip. A method for fabricating an optoelectronic semiconductor component is furthermore specified.