Abstract: This invention pertains to compositions, methods and systems that can be used in chemical mechanical planarization (CMP) of a tungsten containing semiconductor device. CMP slurries comprising bicyclic amidine additives provide low dishing and low erosion topography.

Abstract: This invention pertains to slurries, methods and systems that can be used in chemical mechanical planarization (CMP) of tungsten containing semiconductor device. Using the CMP slurries with additives to counter lowering of pH by tungsten polishing byproducts and maintain pH 4 or higher, the erosion of dense metal (such as tungsten) structures can be greatly diminished.

Abstract: A sealing profile for embedding into a moulding of curable material, in particular a concrete or plastic moulding, and to a sealing arrangement comprising such a sealing profile. The object of the present invention is to provide a sealing profile for embedding into a moulding of curable material that can be anchored into the moulding in particular such that displacements of the seal in its seat occur to a significantly lesser extent, if at all, when installing or assembling the mouldings. The object is achieved by a sealing profile (1) with a profile region (2) having a profile region surface (4) which is directed towards the moulding (3) after embedding the sealing profile (1), wherein the profile region (2) has, at least in one subregion (6), a non-woven, felted or random fibre layer (5) which is fixedly connected to the sealing profile (1) and which extend beyond the profile region surface (4).

Abstract: This invention pertains to compositions, methods and systems that can be used in chemical mechanical planarization (CMP) of a tungsten containing semiconductor device. CMP slurries comprising bicyclic amidine additives provide low dishing and low erosion topography.

Abstract: This invention pertains to compositions, methods and systems that can be used in chemical mechanical planarization (CMP) of a tungsten containing semiconductor device. CMP slurries comprising bicyclic amidine additives provide low dishing and low erosion topography.

Abstract: A sealing profile for embedding into a moulding of curable material, in particular a concrete or plastic moulding, and to a sealing arrangement comprising such a sealing profile. The object of the present invention is to provide a sealing profile for embedding into a moulding of curable material that can be anchored into the moulding in particular such that displacements of the seal in its seat occur to a significantly lesser extent, if at all, when installing or assembling the mouldings. The object is achieved by a sealing profile (1) with a profile region (2) having a profile region surface (4) which is directed towards the moulding (3) after embedding the sealing profile (1), wherein the profile region (2) has, at least in one subregion (6), a non-woven, felted or random fibre layer (5) which is fixedly connected to the sealing profile (1) and which extend beyond the profile region surface (4).

Abstract: This invention pertains to slurries, methods and systems that can be used in chemical mechanical planarization (CMP) of tungsten containing semiconductor device. Additives are used to reduce the dishing on large and small feature sizes (large bond pad as well as fine line structures) without retarding the tungsten removal rate.

Abstract: This invention pertains to compositions, methods and systems that can be used in chemical mechanical planarization (CMP) of a tungsten containing semiconductor device. CMP slurries comprising bicyclic amidine additives provide low dishing and low erosion topography.

Abstract: This invention pertains to slurries, methods and systems that can be used in chemical mechanical planarization (CMP) of tungsten containing semiconductor device. Using the CMP slurries with additives to counter lowering of pH by tungsten polishing byproducts and maintain pH 4 or higher, the erosion of dense metal (such as tungsten) structures can be greatly diminished.

Abstract: A sealing profile for embedding into a moulding of curable material, in particular a concrete or plastic moulding, and to a sealing arrangement comprising such a sealing profile. The object of the present invention is to provide a sealing profile for embedding into a moulding of curable material that can be anchored into the moulding in particular such that displacements of the seal in its seat occur to a significantly lesser extent, if at all, when installing or assembling the mouldings. The object is achieved by a sealing profile (1) with a profile region (2) having a profile region surface (4) which is directed towards the moulding (3) after embedding the sealing profile (1). The profile region (2) has, at least in a subregion (6), fibres (5) which are fixedly connected to the sealing profile (1) and extend beyond the profile region surface (4).

Abstract: A barrier chemical mechanical planarization polishing composition is provided that includes suitable chemical additives. The suitable chemical additives are silicate compound and high molecular weight polymers/copolymers. There is also provided a chemical mechanical polishing method using the barrier chemical mechanical planarization polishing composition.

Abstract: Chemical mechanical polishing (CMP) compositions, methods and systems are for polishing patterned semiconductor wafers. The CMP compositions comprising an abrasive and a water soluble aluminum compound additive with a pH>7 suppress CMP stop layer (a silicon containing layer, such as silicon nitride, silicon oxide, or silicon carbide) removal rate. CMP compositions optionally contain surfactant to help wet surface; a corrosion inhibitor to provide corrosion inhibition on metal lines, vias, or trenches; and a pH adjusting agent that is used to adjust pH of the CMP polishing composition.

Abstract: Chemical mechanical polishing (CMP) compositions, methods and systems are for polishing patterned semiconductor wafers. The CMP compositions comprising an abrasive and a water soluble aluminum compound additive with a pH>7 suppress CMP stop layer (a silicon containing layer, such as silicon nitride, silicon oxide, or silicon carbide) removal rate. CMP compositions optionally contain surfactant to help wet surface; a corrosion inhibitor to provide corrosion inhibition on metal lines, vias, or trenches; and a pH adjusting agent that is used to adjust pH of the CMP polishing composition.

Abstract: A barrier chemical mechanical planarization polishing composition is provided that includes suitable chemical additives. The suitable chemical additives are silicate compound and high molecular weight polymers/copolymers. There is also provided a chemical mechanical polishing method using the barrier chemical mechanical planarization polishing composition.

Abstract: A testing device for testing seals, in particular tubbing seals, which seals have at least one anchoring foot. The testing device can be easily and cost-effectively adjusted to various seals by using plates with a recess, in which correspondingly configured plate elements are detachably inserted, so that different groove shapes scan be reproduced. The recess thus acts as a kind of “universal groove”, which can be adjusted to the respective geometry of the sealing profile to be tested by means of the plate elements, if necessary with the assistance of a curing or curable material.

Abstract: Chemical mechanical polishing (CMP) compositions, methods and systems are for polishing patterned semiconductor wafers. The CMP compositions comprising an abrasive and a water soluble aluminum compound additive with a pH>7 suppress CMP stop layer (a silicon containing layer, such as silicon nitride, silicon oxide, or silicon carbide) removal rate. CMP compositions optionally contain surfactant to help wet surface; a corrosion inhibitor to provide corrosion inhibition on metal lines, vias, or trenches; and a pH adjusting agent that is used to adjust pH of the CMP polishing composition.

Abstract: Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).

Abstract: This invention pertains to slurries, methods and systems that can be used in chemical mechanical planarization (CMP) of tungsten containing semiconductor device. Additives are used to reduce the dishing on large and small feature sizes (large bond pad as well as fine line structures) without retarding the tungsten removal rate.

Abstract: A testing device for testing seals, in particular tubbing seals, which seals have at least one anchoring foot. The testing device can be easily and cost-effectively adjusted to various seals by using plates with a recess, in which correspondingly configured plate elements are detachably inserted, so that different groove shapes scan be reproduced. The recess thus acts as a kind of “universal groove”, which can be adjusted to the respective geometry of the sealing profile to be tested by means of the plate elements, if necessary with the assistance of a curing or curable material.

Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.