Abstract: The present invention relates to a method and to a crucible for producing particle-free and nitrogen-free silicon ingots by means of targeted solidification, in which method a crucible is provided, the inner surface of the crucible having a coating containing SixNy over its full surface or at least in regions, which coating is coated with a protective layer containing SiOx in order to reduce or prevent the introduction of nitrogen and SixNy particles into the silicon. The invention also relates to a silicon ingot, which is virtually free from nitrogen or SixNy particles.

Abstract: Device for producing silicon blocks for photovoltaic applications, comprising a container for receiving a silicon melt with a base wall and at least one side wall, means for reducing the diffusion of impurities from at least one of the walls of the container into the silicon melt, wherein the means for reducing the diffusion of impurities comprise at least one covering element for the at least partial covering of at least one of the walls of the container.

Abstract: Method for producing a silicon ingot comprising the following steps: providing a container for receiving a silicon melt with a base wall extending perpendicular to an axial direction and side walls, providing at least one flat monocrystalline seed crystal with an axial orientation selected from the group of <110>, <100> and <111> orientation, arranging the at least one seed crystal on the base wall of the container and directional solidification of a silicon melt in the container (2) to form a silicon ingot proceeding from the at least one seed crystal, wherein the axial orientation of the at least one seed crystal predetermines an axial orientation for the silicon ingot and wherein the at least one seed crystal is configured on the base wall of the container in such a way that a twin formation is avoided in an edge region adjoining the side walls.

Abstract: Device for producing silicon blocks for photovoltaic applications, comprising a container for receiving a silicon melt with a base wall and at least one side wall, means for reducing the diffusion of impurities from at least one of the walls of the container into the silicon melt, wherein the means for reducing the diffusion of impurities comprise at least one covering element for the at least partial covering of at least one of the walls of the container.

Abstract: Device for the production of silicon blocks, the device comprising a vessel for receiving a silicon melt with a bottom, an inside, an outside and a central longitudinal axis and at least one support plate which is at least partially in direct contact with the bottom, and which forms a base together with the bottom, and means for generating an inhomogeneous temperature field on the inside of the bottom.

Abstract: A device for the production of silicon blocks comprising a vessel for receiving a silicon melt with at least one vessel wall, with the at least one vessel wall comprising a nucleation-inhibiting coating on at least part of an inside or with the at least one vessel wall consisting of a nucleation-inhibiting material.