Abstract: A process for manufacturing SiC wherein the emissions of polluting gases are minimized, by reduction of silicon oxide by an excess of carbon, the process including electrically heating a resistor at the heart of a mixture of raw materials consisting of a carbon-based source chosen from petroleum cokes and a source of silicon, especially a silica having a purity of greater than 95% of SiO2, in order to give rise, at a temperature above 1500° C., to the simplified reaction: SiO2+3C=SiC+2CO (1), wherein the carbon-based source first undergoes a treatment for removing the contained hydrogen, so that its elemental hydrogen content (EHWC) is less than 2% by weight.

Abstract: A method for treating workpieces that consist of porous carbon material with liquid silicon with the formation of silicon carbide, comprising the steps: Preheating porous carbon workpieces under inert gas to the selected operating temperature TB1, feeding liquid silicon to the porous carbon workpieces at an operating pressure pB2 and an operating temperature TB2, and impregnating the porous carbon workpieces with liquid silicon, reaction of the liquid silicon in the workpiece at a temperature TB3 with the formation of silicon carbide that consists of carbon and silicon, gassing the workpiece with inert gas and cooling from the operating temperature TB3 to the conditioning temperature Tk, cooling the workpieces to room temperature, the temperature TB3 being greater than or equal to the temperature TB2, and the workpiece in step d of the method no longer being in contact with liquid silicon outside of the workpiece.

Abstract: A method includes placing a material including a glass precursor material in contact with a second material and annealing the glass precursor material to form a glass composition in contact with the second material. In an embodiment, annealing is performed at a single temperature. In another embodiment, annealing is performed at a temperature in a range of 750° C. to 1000° C. In a particular embodiment, the glass composition includes a crystalline fraction of at least 30%.

Abstract: A glass-ceramic seal for ionic transport devices such as solid oxide fuel cell stacks or oxygen transport membrane applications. Preferred embodiments of the present invention comprise glass-ceramic sealant material based on a Barium-Aluminum-Silica system, which exhibits a high enough coefficient of thermal expansion to closely match the overall CTE of a SOFC cell/stack (preferably from about 11 to 12.8 ppm/° C.), good sintering behavior, and a very low residual glass phase (which contributes to the stability of the seal).

Abstract: A process for manufacturing SiC wherein the emissions of polluting gases are minimized, by reduction of silicon oxide by an excess of carbon, the process including electrically heating a resistor at the heart of a mixture of raw materials consisting of a carbon-based source chosen from petroleum cokes and a source of silicon, especially a silica having a purity of greater than 95% of SiO2, in order to give rise, at a temperature above 1500° C., to the simplified reaction: SiO2+3C=SiC+2CO (1), wherein the carbon-based source first undergoes a treatment for removing the contained hydrogen, so that its elemental hydrogen content (EHWC) is less than 2% by weight.

Abstract: A method for treating workpieces that consist of porous carbon material with liquid silicon with the formation of silicon carbide, comprising the steps: Preheating porous carbon workpieces under inert gas to the selected operating temperature TB1, feeding liquid silicon to the porous carbon workpieces at an operating pressure pB2 and an operating temperature TB2, and impregnating the porous carbon workpieces with liquid silicon, reaction of the liquid silicon in the workpiece at a temperature TB3 with the formation of silicon carbide that consists of carbon and silicon, gassing the workpiece with inert gas and cooling from the operating temperature TB3 to the conditioning temperature Tk, cooling the workpieces to room temperature, the temperature TB3 being greater than or equal to the temperature TB2, and the workpiece in step d of the method no longer being in contact with liquid silicon outside of the workpiece.

Abstract: A method for treating workpieces that consist of porous carbon material with liquid silicon with the formation of silicon carbide, comprising the steps: Preheating porous carbon workpieces under inert gas to the selected operating temperature TB1, feeding liquid silicon to the porous carbon workpieces at an operating pressure pB2 and an operating temperature TB2, and impregnating the porous carbon workpieces with liquid silicon, reaction of the liquid silicon in the workpiece at a temperature TB3 with the formation of silicon carbide that consists of carbon and silicon, gassing the workpiece with inert gas and cooling from the operating temperature TB3 to the conditioning temperature Tk, cooling the workpieces to room temperature, the temperature TB3 being greater than or equal to the temperature TB2, and the workpiece in step d of the method no longer being in contact with liquid silicon outside of the workpiece.

Abstract: A method for treating workpieces that consist of porous carbon material with liquid silicon with the formation of silicon carbide, comprising the steps: Preheating porous carbon workpieces under inert gas to the selected operating temperature TB1, feeding liquid silicon to the porous carbon workpieces at an operating pressure pB2 and an operating temperature TB2, and impregnating the porous carbon workpieces with liquid silicon, reaction of the liquid silicon in the workpiece at a temperature TB3 with the formation of silicon carbide that consists of carbon and silicon, gassing the workpiece with inert gas and cooling from the operating temperature TB3 to the conditioning temperature Tk, cooling the workpieces to room temperature, the temperature TB3 being greater than or equal to the temperature TB2, and the workpiece in step d of the method no longer being in contact with liquid silicon outside of the workpiece.