Abstract: The present invention relates to a micromechanical device comprising a multi-layer micromechanical structure including only homogenous silicon material. The device layer comprises at least a rotor and at least two stators. At least some of the rotor and at least two stators are at least partially recessed to at least two different depths of recession from a first surface of the device layer and at least some of the rotor and at least two stators are at least partially recessed to at least two different depths of recession from a second surface of the device layer.

Abstract: The structure enables two-directional sensing of accelerations with compact component dimensions and with minimal cross-axis sensitivity. The rotation mass includes a first frame and a second frame. In one sense direction, the structure employs a combined proof mass of the first frame and the second frame, which improves the signal to noise level achievable with said device dimensions. In the other sense direction, a detection structure with at least two sensing elements is used to detect displacements of the proof mass of the second frame. Due to the specific internal configuration of the detection structure, signal contributions of the sensing elements in the one direction cancel each other.

Abstract: The invention relates to a capacitive micromechanical acceleration sensor comprising a first sensor, a second sensor, and a third sensor. The first sensor comprises a rotor electrode and stator electrode. The sensor comprises a first beam that is connected to a rotor electrode support structure and that is connected to the rotor electrode. The sensor comprises a second beam that is connected to the rotor electrode support structure and that is connected to the rotor electrode. The second sensor is situated in a first space circumscribed by the first beam, the first sensor, and the rotor electrode support structure. The third sensor is situated in a second space circumscribed by the second beam, the first sensor, and the rotor electrode support structure.

Abstract: The invention relates to a capacitive micromechanical sensor structure comprising a stator structure rigidly anchored to a substrate and a rotor structure movably anchored by means of spring structures to the substrate. The stator structure has a plurality of stator finger support beams and the rotor structure has a plurality of rotor finger support beams. Stator fingers along the stator finger support beam of the stator structure extend into rotor gaps along the rotor finger support beam of the rotor structure, and rotor fingers along the rotor finger support beam of the rotor structure extend into stator gaps along the stator finger support beam of the stator structure.

Abstract: The present invention relates to a micromechanical device comprising a multi-layer micromechanical structure including only homogenous silicon material. The device layer comprises at least a rotor and at least two stators. At least some of the rotor and at least two stators are at least partially recessed to at least two different depths of recession from a first surface of the device layer and at least some of the rotor and at least two stators are at least partially recessed to at least two different depths of recession from a second surface of the device layer.

Abstract: A MEMS structure that provides an improved way to selectively control electromechanical properties of a MEMS device with an applied voltage. The MEMS structure includes a capacitor element that comprises at least one stator element, and at least one rotor element suspended for motion parallel to a first direction in relation to the stator element. The stator element and the rotor element form at least one capacitor element, the capacitance of which varies according to displacement of the rotor element from an initial position. The stator element and the rotor element are mutually oriented such that in at least one range of displacements of the rotor element from an initial position, the second derivative of the capacitance with respect to the displacement has negative values.

Abstract: The MEMS sensor of the invention has movable and fixed components for measuring acceleration in a rotational mode in a direction in-plane perpendicular to spring axis. The components include an element frame, a substrate, a proof-mass a spring connected to the proof-mass and to the substrate, and comb electrodes. The MEMS sensor is mainly characterized by an arrangement of the components causing an inherent sensitivity for measuring accelerations in a range covering longitudinal and transversal accelerations. One or more of the components are tilted compared to the element frame. The semiconductor package of the invention comprises at least one MEMS sensor.

Abstract: The invention relates to a capacitive micromechanical sensor structure comprising a stator structure rigidly anchored to a substrate and a rotor structure movably anchored by means of spring structures to the substrate. The stator structure has a plurality of stator finger support beams and the rotor structure has a plurality of rotor finger support beams. Stator fingers along the stator finger support beam of the stator structure extend into rotor gaps along the rotor finger support beam of the rotor structure, and rotor fingers along the rotor finger support beam of the rotor structure extend into stator gaps along the stator finger support beam of the stator structure.

Abstract: The invention relates to a capacitive micromechanical acceleration sensor comprising a first sensor, a second sensor, and a third sensor. The first sensor comprises a rotor electrode and stator electrode. The sensor comprises a first beam that is connected to a rotor electrode support structure and that is connected to the rotor electrode. The sensor comprises a second beam that is connected to the rotor electrode support structure and that is connected to the rotor electrode. The second sensor is situated in a first space circumscribed by the first beam, the first sensor, and the rotor electrode support structure. The third sensor is situated in a second space circumscribed by the second beam, the first sensor, and the rotor electrode support structure.