Abstract: An apparatus and a method for processing one or more substrates in a batch process according to the principles of atomic layer deposition (ALD) includes a reaction chamber, a chamber plate for closing the reaction chamber, a motor arranged to move the chamber plate between an open position, in which the reaction chamber is open, and a closed position, in which the reaction chamber is closed, and an actuator arm mechanism connected to said motor. The actuator arm mechanism having three or more actuator arms having a distal end, which is connected to the chamber plate, the distal ends of the three or more actuator arms define a plane on the chamber plate.

Abstract: A precursor supply cabinet for accommodating one or more precursor containers having cabinet walls defining an inner cabinet space. The precursor supply cabinet includes a ventilation discharge connection arranged to discharge ventilation gas from the inner cabinet space, one or more ventilation inlet connections, two or more separate gas tight precursor supply chambers for accommodating precursor containers. The gas tight precursor supply chambers are arranged inside the inner cabinet space of the precursor supply cabinet such that the inner cabinet space of the precursor supply cabinet surrounding the separate gas tight precursor supply chambers is ventilated.

Abstract: An apparatus and a method for processing one or more substrates in a batch process according to the principles of atomic layer deposition (ALD) includes a reaction chamber, a chamber plate for closing the reaction chamber, a motor arranged to move the chamber plate between an open position, in which the reaction chamber is open, and a closed position, in which the reaction chamber is closed, and an actuator arm mechanism connected to said motor. The actuator arm mechanism having three or more actuator arms having a distal end, which is connected to the chamber plate, the distal ends of the three or more actuator arms define a plane on the chamber plate.

Abstract: A precursor supply chamber for accommodating a precursor container in connection with an atomic layer deposition apparatus includes chamber walls defining a chamber space inside the precursor supply chamber. The precursor supply chamber also includes a chamber door assembly arranged to close the precursor supply chamber in a gas tight manner, a first heating element provided to the precursor supply chamber and arranged to heat the precursor container inside the chamber space of the precursor supply chamber and a gas tight precursor connection provided to the chamber walls for supplying precursor from the precursor container outside the precursor supply chamber.

Abstract: A gas distribution unit in connection with an atomic layer deposition reactor includes an inlet surface, an outlet surface, a process gas channel extending through the gas distribution unit and being open to the inlet surface and to the outlet surface, a barrier gas inlet fitting connected to the process gas channel between the inlet surface and the outlet surface for supplying barrier gas to the process gas channel, and a barrier gas outlet fitting connected to the process gas channel between the inlet surface and the barrier gas inlet fitting for discharging barrier gas from the process gas channel.

Abstract: A precursor supply cabinet for accommodating one or more precursor containers having cabinet walls defining an inner cabinet space. The precursor supply cabinet includes a ventilation discharge connection arranged to discharge ventilation gas from the inner cabinet space, one or more ventilation inlet connections, two or more separate gas tight precursor supply chambers for accommodating precursor containers. The gas tight precursor supply chambers are arranged inside the inner cabinet space of the precursor supply cabinet such that the inner cabinet space of the precursor supply cabinet surrounding the separate gas tight precursor supply chambers is ventilated.

Abstract: A gas distribution unit in connection with an atomic layer deposition reactor includes an inlet surface, an outlet surface, a process gas channel extending through the gas distribution unit and being open to the inlet surface and to the outlet surface, a barrier gas inlet fitting connected to the process gas channel between the inlet surface and the outlet surface for supplying barrier gas to the process gas channel, and a barrier gas outlet fitting connected to the process gas channel between the inlet surface and the barrier gas inlet fitting for discharging barrier gas from the process gas channel.