Patents by Inventor Maurice Emerson PEPLOSKI

Maurice Emerson PEPLOSKI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Etch improvement
    Patent number: 11852853
    Abstract: A method is provided. The method includes exposing a first material disposed across a first plane on a first substrate to an ion beam to form a first plurality of structures in the first material, the ion beam directed at the first material at an ion beam angle ? relative to a surface normal of the first substrate. The first substrate is positioned at a first rotation angle ?1 between the ion beam and a first vector of the first plurality of structures, the first material is exposed to the ion beam incrementally along a first direction, and exposure of the first material to the ion beam is varied along the first direction to generate a depth variation between the first plurality of structures in the first direction.
    Type: Grant
    Filed: January 12, 2021
    Date of Patent: December 26, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Rutger Meyer Timmerman Thijssen, Morgan Evans, Maurice Emerson Peploski, Joseph C. Olson, Thomas James Soldi
  • SHADOW MASK APPARATUS AND METHODS FOR VARIABLE ETCH DEPTHS
    Publication number: 20220238295
    Abstract: Methods of producing grating materials with variable height are provided. In one example, a method may include providing a grating material atop a substrate, and positioning a shadow mask between the grating material and an ion source, wherein the shadow mask is separated from the grating material by a distance. The method may further include etching the grating material using an ion beam passing through a set of openings of the shadow mask, wherein a first depth of a first portion of the grating material is different than a second depth of a second portion of the grating material.
    Type: Application
    Filed: April 18, 2022
    Publication date: July 28, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Joseph C. Olson, Morgan Evans, Thomas Soldi, Rutger Meyer Timmerman Thijssen, Maurice Emerson Peploski
  • Shadow mask apparatus and methods for variable etch depths
    Patent number: 11335531
    Abstract: Methods of producing grating materials with variable height are provided. In one example, a method may include providing a grating material atop a substrate, and positioning a shadow mask between the grating material and an ion source, wherein the shadow mask is separated from the grating material by a distance. The method may further include etching the grating material using an ion beam passing through a set of openings of the shadow mask, wherein a first depth of a first portion of the grating material is different than a second depth of a second portion of the grating material.
    Type: Grant
    Filed: February 13, 2020
    Date of Patent: May 17, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Joseph C. Olson, Morgan Evans, Thomas Soldi, Rutger Meyer Timmerman Thijssen, Maurice Emerson Peploski
  • SHADOW MASK APPARATUS AND METHODS FOR VARIABLE ETCH DEPTHS
    Publication number: 20210257179
    Abstract: Methods of producing grating materials with variable height are provided. In one example, a method may include providing a grating material atop a substrate, and positioning a shadow mask between the grating material and an ion source, wherein the shadow mask is separated from the grating material by a distance. The method may further include etching the grating material using an ion beam passing through a set of openings of the shadow mask, wherein a first depth of a first portion of the grating material is different than a second depth of a second portion of the grating material.
    Type: Application
    Filed: February 13, 2020
    Publication date: August 19, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Joseph C. Olson, Morgan Evans, Thomas Soldi, Rutger Meyer Timmerman Thijssen, Maurice Emerson Peploski
  • ETCH IMPROVEMENT
    Publication number: 20210247554
    Abstract: A method is provided. The method includes exposing a first material disposed across a first plane on a first substrate to an ion beam to form a first plurality of structures in the first material, the ion beam directed at the first material at an ion beam angle ? relative to a surface normal of the first substrate. The first substrate is positioned at a first rotation angle ?1 between the ion beam and a first vector of the first plurality of structures, the first material is exposed to the ion beam incrementally along a first direction, and exposure of the first material to the ion beam is varied along the first direction to generate a depth variation between the first plurality of structures in the first direction.
    Type: Application
    Filed: January 12, 2021
    Publication date: August 12, 2021
    Inventors: Rutger MEYER TIMMERMAN THIJSSEN, Morgan EVANS, Maurice Emerson PEPLOSKI, Joseph C. OLSON, Thomas James SOLDI