Abstract: A ferroelectric device that comprises a polarizing thin film of BaMF.sub.4 deposited on a substrate. Ba is barium, M is one of the metals of the group consisting of iron (FE), manganese (Mn), cobolt (Co), nickel (Ni), magnesium (Mg), and zinc (Zn). The substrate is silicon, sapphire, or gallium arsenide. A non-volatile NDRO and DRO memory cell and methods for depositing the thin film. A method of depositing bismuth titanate on a substrate are described.

Abstract: Solid layer semiconductor compositions are deposited by the simultaneous sputtering from a sputter target and electrically discharge a reacting gas preferably by application of an RF potential. Preferably, the method is used to make solid solution layers and most desirably solid solution epitaxial layers of at least two semiconductor materials. The method may be used to make novel metastable compositions such as (GaAs).sub.1-x Si.sub.x, (GaAs).sub.1-x, Ge.sub.x, (InSb).sub.1-x Si.sub.x, (InSb).sub.1-x Ge.sub.x, (InAs).sub.1-x Si.sub.x and (InAs).sub.1-x Ge.sub.x (where x is a number greater than about 0.01, and x+(1-x)=1, and Ga.sub.x As.sub.y Si.sub.z, Ga.sub.x As.sub.y Ge.sub.z, In.sub.x Sb.sub.y Si.sub.z, In.sub.x Sb.sub.y Ge.sub.z, In.sub.x As.sub.y Si.sub.z, In.sub.x As.sub.y Ge.sub.z and In.sub.x Sb.sub.y As.sub.z (where x, y and z are numbers greater than about 0.01, and x+y+z=1).

Abstract: A method of forming interconnections is described wherein small gaps between contacts are bridged by electroplating metal onto both contacts to form a conductive path therebetween. Many interconnections may be made simultaneously between adjacent contacts by bridging the gap with metal by electroplating.

Abstract: An electrostatically bonded dielectric-on semiconductor device, such as a ferroelectric field-effect transistor or amplifying acoustic surface wave transducer, is made with a dielectric body having properties selected from the group consisting of ferroelectricity and piezoelectricity. The dielectric body has opposed first and second major surfaces, with at least said first major surface of planar configuration to which a semiconductor body is electrostatically bonded. The semiconductor body is of a bulk material and a given conductivity type, and has first and second opposed major surfaces, with at least the first major surface of planar configuration where the semiconductor body is electrostatically bonded. At least one and typically a plurality of electrodes are positioned on the dielectric body to provide for interaction between transport carriers in the semiconductor body and electric polarization changes in the dielectric body. Preferably, the dielectric-on-semiconductor is made by the method described.

Abstract: Solid layer semiconductor compositions are deposited by the simultaneous sputtering from a sputter target and electrically discharge a reacting gas preferably by application of an RF potential. Preferably, the method is used to make solid solution layers and most desirably solid solution epitaxial layers of at least two semiconductor materials. The method may be used to make novel metastable compositions such as (GaAs).sub.1.sub.-x Si.sub.x, (GaAs).sub.1.sub.-x Ge.sub.x, (InSb).sub.1.sub.-x Si.sub.x, (InSb).sub.1.sub.-x Ge.sub.x, (InAs).sub.1.sub.-x Si.sub.x and (InAs).sub.1.sub.-x Ge.sub.x (where x is a number greater than about 0.01, and x + (1-x) = 1, and Ga.sub.x As.sub.y Si.sub.z, Ga.sub.x As.sub.y Ge.sub.z, In.sub.x Sb.sub.y Si.sub.z, In.sub.x Sb.sub.y Ge.sub.z, In.sub.x As.sub.y Si.sub.z, In.sub.x As.sub.y Ge.sub.z and In.sub.x Sb.sub.y As.sub.z (where x, y and z are numbers greater than about 0.01, and x + y + z = 1).