Patents by Inventor Maurice L. Hitchell, deceased

Maurice L. Hitchell, deceased has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for forming a high gain, wide bandgap gallium nitride photoconductor having particular sensitivity to ultraviolet radiation
    Patent number: 5923953
    Abstract: A process for forming a UV sensitive gallium nitride layer includes a step of depositing a layer of aluminum nitride on which the gallium nitride layer is deposited. Two tests, sheet resistance and photoluminescent response of the gallium nitride layer, allow one to determine that a particular gallium nitride layer produced by the process will have the required response to UV radiation. Either a careful calibration which determines a required length of the aluminum nitride deposition time, or the introduction of silicon into the gallium nitride layer during its deposition, has been found to result in deposit of a gallium nitride layer which has superior UV sensing characteristics.
    Type: Grant
    Filed: January 27, 1997
    Date of Patent: July 13, 1999
    Assignee: Honeywell Inc.
    Inventors: Barbara Goldenberg Barany, Scott A. McPherson, Scott T. Reimer, Robert P. Ulmer, J. David Zook, Maurice L. Hitchell, deceased