Patents by Inventor Maurits Van Der Schaar
Maurits Van Der Schaar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230273255Abstract: Disclosed is a method for obtaining a computationally determined interference electric field describing scattering of radiation by a pair of structures comprising a first structure and a second structure on a substrate. The method comprises determining a first electric field relating to first radiation scattered by the first structure; determining a second electric field relating to second radiation scattered by the second structure; and computationally determining the interference of the first electric field and second electric field, to obtain a computationally determined interference electric field.Type: ApplicationFiled: May 5, 2023Publication date: August 31, 2023Applicant: ASML Netherlands B.V.Inventors: Patricius Aloysius Jacobus TINNEMANS, Patrick Warnaar, Vasco Tomas Tenner, Maurits Van Der Schaar
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Publication number: 20230236515Abstract: Disclosed is target arrangement comprising a first target region having at least a first pitch and at least a second pitch a second target region having at least a third pitch, wherein a portion of the first target region having a second pitch overlaps with a portion of the second target region.Type: ApplicationFiled: June 8, 2021Publication date: July 27, 2023Applicant: ASML Netherlands B.V.Inventors: Maurits VAN DER SCHAAR, Patrick WARNAAR, Franciscus Godefridus Casper BIJNEN, Olger Victor ZWIER
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Patent number: 11709436Abstract: Disclosed is a method for obtaining a computationally determined interference electric field describing scattering of radiation by a pair of structures comprising a first structure and a second structure on a substrate. The method comprises determining a first electric field relating to first radiation scattered by the first structure; determining a second electric field relating to second radiation scattered by the second structure; and computationally determining the interference of the first electric field and second electric field, to obtain a computationally determined interference electric field.Type: GrantFiled: August 30, 2021Date of Patent: July 25, 2023Assignee: ASML Netherlands B.V.Inventors: Patricius Aloysius Jacobus Tinnemans, Patrick Warnaar, Vasco Tomas Tenner, Maurits Van Der Schaar
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Patent number: 11698346Abstract: Multilayered product structures are formed on substrates by a combination of patterning steps, physical processing steps and chemical processing steps. An inspection apparatus illuminates a plurality of target structures and captures pupil images representing the angular distribution of radiation scattered by each target structure. The target structures have the same design but are formed at different locations on a substrate and/or on different substrates. Based on a comparison of the images the inspection apparatus infers the presence of process-induced stack variations between the different locations. In one application, the inspection apparatus separately measures overlay performance of the manufacturing process based on dark-field images, combined with previously determined calibration information. The calibration is adjusted for each target, depending on the stack variations inferred from the pupil images.Type: GrantFiled: August 28, 2018Date of Patent: July 11, 2023Assignee: ASML NETHERLANDS B.V.Inventors: Ioana Sorina Barbu, Murat Bozkurt, Maurits Van Der Schaar, Alberto Da Costa Assafrao
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Publication number: 20230185990Abstract: A method including performing a simulation to evaluate a plurality of metrology targets and/or a plurality of metrology recipes used to measure a metrology target, identifying one or more metrology targets and/or metrology recipes from the evaluated plurality of metrology targets and/or metrology recipes, receiving measurement data of the one or more identified metrology targets and/or metrology recipes, and using the measurement data to tune a metrology target parameter or metrology recipe parameter.Type: ApplicationFiled: January 10, 2023Publication date: June 15, 2023Applicant: ASML NETHERLANDS B.V.Inventors: Lotte Marloes Willems, Kaustuve Bhattacharyya, Panagiotis Pieter Bintevinos, Guangqing Chen, Martin Ebert, Pieter Jacob Mathias Hendrik Knelissen, Stephen Morgan, Maurits Van Der Schaar, Leonardus Henricus Marie Verstappen, Jen-Shiang Wang, Peter Hanzen Wardenier
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Publication number: 20230176491Abstract: Disclosed is a substrate and associated patterning device. The substrate comprises at least one target arrangement suitable for metrology of a lithographic process, the target arrangement comprising at least one pair of similar target regions which are arranged such that the target arrangement is, or at least the target regions for measurement in a single direction together are, centrosymmetric. A metrology method is also disclosed for measuring the substrate. A metrology method is also disclosed comprising which comprises measuring such a target arrangement and determining a value for a parameter of interest from the scattered radiation, while correcting for distortion of the metrology apparatus used.Type: ApplicationFiled: April 21, 2021Publication date: June 8, 2023Applicant: ASML Netherlands B.V.Inventors: Olger Victor ZWIER, Maurits VAN DER SCHAAR, Hilko Dirk BOS, Hans VAN DER LAAN, S.M. Masudur Rahman AL ARIF, Henricus Wilhelmus Maria Van Buel, Armand Eugene Albert KOOLEN, Victor CALADO, Kaustuve BHATTACHARYYA, Jin LIAN, Sebastianus Adrianus GOORDEN, Hui Quan LIM
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Patent number: 11580274Abstract: A method including performing a simulation to evaluate a plurality of metrology targets and/or a plurality of metrology recipes used to measure a metrology target, identifying one or more metrology targets and/or metrology recipes from the evaluated plurality of metrology targets and/or metrology recipes, receiving measurement data of the one or more identified metrology targets and/or metrology recipes, and using the measurement data to tune a metrology target parameter or metrology recipe parameter.Type: GrantFiled: March 24, 2016Date of Patent: February 14, 2023Assignee: ASML NETHERLANDS B.V.Inventors: Lotte Marloes Willems, Kaustuve Bhattacharyya, Panagiotis Pieter Bintevinos, Guangqing Chen, Martin Ebert, Pieter Jacob Mathias Hendrik Knelissen, Stephen Morgan, Maurits Van Der Schaar, Leonardus Henricus Marie Verstappen, Jen-Shiang Wang, Peter Hanzen Wardenier
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Publication number: 20230016664Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.Type: ApplicationFiled: July 26, 2022Publication date: January 19, 2023Applicant: ASML NETHERLANDS B.V.Inventors: Kaustuve BHATTACHARYYA, Henricus Wilhelmus Maria Van Buel, Christophe David Fouquet, Hendrik Jan Hidde Smilde, Maurits Van Der Schaar, Arie Jeffrey Den Boef, Richard Johannes Franciscus Van Haren, Xing Lan Liu, Johannes Marcus Maria Beltman, Andreas Fuchs, Omer Abubaker Omer Adam, Michael Kubis, Martin Jacobus Johan Jak
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Patent number: 11525786Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.Type: GrantFiled: March 4, 2021Date of Patent: December 13, 2022Assignee: ASML Netherlands B.V.Inventors: Arie Jeffrey Den Boef, Arno Jan Bleeker, Youri Johannes Laurentius Maria Van Dommelen, Mircea Dusa, Antoine Gaston Marie Kiers, Paul Frank Luehrmann, Henricus Petrus Maria Pellemans, Maurits Van Der Schaar, Cédric Désiré Grouwstra, Markus Gerardus Martinus Maria Van Kraaij
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Publication number: 20220350254Abstract: A method for applying a deposition model in a semiconductor manufacturing process. The method includes predicting a deposition profile of a substrate using the deposition model; and using the predicted deposition profile to enhance a metrology target design. The deposition model can be calibrated using experimental cross-section profile information from a layer of a physical substrate. In some embodiments, the deposition model is a machine-learning model, and calibrating the deposition model includes training the machine-learning model. The metrology target design may include an alignment metrology target design or an overlay metrology target design, for example.Type: ApplicationFiled: June 4, 2020Publication date: November 3, 2022Applicant: ASML NETHERLANDS B.V.Inventors: Maxim PISARENCO, Maurits VAN DER SCHAAR, Huaichen ZHANG, Marie-Claire VAN LARE
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Patent number: 11480884Abstract: A method for improving the yield of a lithographic process, the method including: determining a parameter fingerprint of a performance parameter across a substrate, the parameter fingerprint including information relating to uncertainty in the performance parameter; determining a process window fingerprint of the performance parameter across the substrate, the process window being associated with an allowable range of the performance parameter; and determining a probability metric associated with the probability of the performance parameter being outside an allowable range. Optionally a correction to the lithographic process is determined based on the probability metric.Type: GrantFiled: July 23, 2020Date of Patent: October 25, 2022Assignee: ASML Netherlands B.V.Inventors: Everhardus Cornelis Mos, Jochem Sebastiaan Wildenberg, Erik Johannes Maria Wallerbos, Maurits Van Der Schaar, Frank Staals, Franciscus Hendricus Arnoldus Elich
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Patent number: 11466980Abstract: A lithographic process is used to form a plurality of target structures distributed at a plurality of locations across a substrate and having overlaid periodic structures with a number of different overlay bias values distributed across the target structures. At least some of the target structures comprising a number of overlaid periodic structures (e.g., gratings) that is fewer than said number of different overlay bias values. Asymmetry measurements are obtained for the target structures. The detected asymmetries are used to determine parameters of a lithographic process. Overlay model parameters including translation, magnification and rotation, can be calculated while correcting the effect of bottom grating asymmetry, and using a multi-parameter model of overlay error across the substrate.Type: GrantFiled: July 13, 2017Date of Patent: October 11, 2022Assignee: ASML Netherlands B.V.Inventors: Maurits Van Der Schaar, Kaustuve Bhattacharyya, Hendrik-Jan Hidde Smilde
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Patent number: 11429029Abstract: A method includes projecting an illumination beam of radiation onto a metrology target on a substrate, detecting radiation reflected from the metrology target on the substrate, and determining a characteristic of a feature on the substrate based on the detected radiation, wherein a polarization state of the detected radiation is controllably selected to optimize a quality of the detected radiation.Type: GrantFiled: October 27, 2020Date of Patent: August 30, 2022Assignee: ASML NETHERLANDS B.V.Inventors: Maurits Van Der Schaar, Patrick Warnaar, Youping Zhang, Arie Jeffrey Den Boef, Feng Xiao, Martin Ebert
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Patent number: 11428521Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.Type: GrantFiled: November 5, 2021Date of Patent: August 30, 2022Assignee: ASML Netherlands B.V.Inventors: Kaustuve Bhattacharyya, Henricus Wilhelmus Maria Van Buel, Christophe David Fouquet, Hendrik Jan Hidde Smilde, Maurits Van der Schaar, Arie Jeffrey Den Boef, Richard Johannes Franciscus Van Haren, Xing Lan Liu, Johannes Marcus Maria Beltman, Andreas Fuchs, Omer Abubaker Omer Adam, Michael Kubis, Martin Jacobus Johan Jak
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Publication number: 20220260929Abstract: A patterning device for patterning product structures onto a substrate and an associated substrate patterned using such a patterning device. The patterning device includes target patterning elements for patterning at least one target from which a parameter of interest can be inferred. The patterning device includes product patterning elements for patterning the product structures. The target patterning elements and product patterning elements are configured such that the at least one target has at least one boundary which is neither parallel nor perpendicular with respect to the product structures on the substrate.Type: ApplicationFiled: July 6, 2020Publication date: August 18, 2022Applicants: ASML NETHERLANDS B.V., ASML HOLDING N.V.Inventors: Nikhil MEHTA, Maurits VAN DER SCHAAR, Markus Gerardus Martinus Maria VAN KRAAIJ, Hugo Augustinus Joseph CRAMER, Olger Victor ZWIER, Jeroen COTTAAR, Patrick WARNAAR
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Publication number: 20220252990Abstract: Disclosed is a method comprising measuring radiation reflected from a metrology target and decomposing the measured radiation in components, for example Fourier components or spatial components. Further, there is disclosed a recipe selection method which provides an algorithm to select a parameter of the metrology apparatus based on re-calculated dependencies of 5 the measured radiation based on single components.Type: ApplicationFiled: July 7, 2020Publication date: August 11, 2022Applicant: ASML Netherlands B,V.Inventors: Narjes JAVAHERI, Maurits VAN DER SCHAAR, Tieh-Ming CHANG, Hilko Dirk BOS, Patrick WARNNAR, Samira BAHRAMI, Mohammadreza HAJIAHMADI, Sergey TARABRIN, Mykhailo SEMKIV
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Patent number: 11392044Abstract: A method, system and program for determining a position of a feature referenced to a substrate. The method includes measuring a position of the feature, receiving an intended placement of the feature and determining an estimate of a placement error based on knowledge of a relative position of a first reference feature referenced to a first layer on a substrate with respect to a second reference feature referenced to a second layer on a substrate. The updated position may be used to position the layer of the substrate having the feature, or another layer of the substrate, or another layer of another substrate.Type: GrantFiled: January 16, 2020Date of Patent: July 19, 2022Assignee: ASML Netherlands B.V.Inventors: Ralph Timotheus Huijgen, Marc Jurian Kea, Marcel Theodorus Maria Van Kessel, Masashi Ishibashi, Chi-Hsiang Fan, Hakki Ergün Cekli, Youping Zhang, Maurits Van Der Schaar, Liping Ren
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Patent number: 11385553Abstract: A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets (1032, 1034) formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship (1502, 1504) between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P1/P2). Bias variations between the sub-targets of the pair are equal and opposite (P2/P1). Overlay (OV) is calculated based on a relative shift (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements (1506, 1508, 1510) that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.Type: GrantFiled: May 3, 2021Date of Patent: July 12, 2022Assignee: ASML Netherlands B.V.Inventors: Zili Zhou, Nitesh Pandey, Olger Victor Zwier, Patrick Warnaar, Maurits Van Der Schaar, Elliott Gerard McNamara, Arie Jeffrey Den Boef, Paul Christiaan Hinnen, Murat Bozkurt, Joost Jeroen Ottens, Kaustuve Bhattacharyya, Michael Kubis
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Patent number: 11320745Abstract: There is disclosed a method of measuring a process parameter for a manufacturing process involving lithography. In a disclosed arrangement the method comprises performing first and second measurements of overlay error in a region on a substrate, and obtaining a measure of the process parameter based on the first and second measurements of overlay error. The first measurement of overlay error is designed to be more sensitive to a perturbation in the process parameter than the second measurement of overlay error by a known amount.Type: GrantFiled: September 4, 2020Date of Patent: May 3, 2022Assignee: ASML Netherlands B.V.Inventors: Maurits Van Der Schaar, Arie Jeffrey Den Boef, Omer Abubaker Omer Adam, Te-Chih Huang, Youping Zhang
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Publication number: 20220113638Abstract: A method of metrology target design is described. The method includes determining a sensitivity of a parameter of a metrology target design to a perturbation of a process parameter for forming, or measuring the formation of, the metrology target, and determining a robustness of the metrology target design based on the sum of the sensitivity multiplied by the perturbation of at least one of the process parameters.Type: ApplicationFiled: December 22, 2021Publication date: April 14, 2022Applicant: ASML NETHERLANDS B.V.Inventors: Guangqing Chen, Wei Liu, Maurits Van Der Schaar