Abstract: A microfluidic device, particularly of the lab-on-chip type, for the detection of biological and/or medical targets of interest in biological samples, as well as for the operations of extraction of such targets from native or non-native biological samples, of purification, concentration, and injection in buffer solutions, all adapted to optimize the detection thereof.

Abstract: A lab-on-a-chip diagnosis device, which comprises: —a network of ducts (18) and a plurality of vents (20) that are adapted to stabilize the internal conditions of pressure and temperature of the diagnosis device, by making them conform to the external environmental conditions of use; —a sample loading station (22) adapted to introduce a sample of biological fluid to be analyzed; —a first buffer tank (24) containing a first buffer liquid for conditioning and stabilizing the sample; —a mixing duct (26) adapted to mix together the first buffer liquid and the sample; —an electrophoresis chamber (44) containing a separative filtering material, and adapted to purify the conditioned sample and to concentrate at least one analyte of interest; —a detection chamber (54) adapted to detect and quantify the presence of the at least one analyte of interest in an extract from the electrophoresis chamber (44).

Abstract: A microfluidic device, particularly of the lab-on-chip type, for the detection of biological and/or medical targets of interest in biological samples, as well as for the operations of extraction of such targets from native or non-native biological samples, of purification, concentration, and injection in buffer solutions, all adapted to optimize the detection thereof.

Abstract: A diagnostic device, particularly of the lab-on-chip type having a station for inserting a native sample of a fluid to be tested; a chamber for stabilizing the native sample, and a station for separating the native sample. The device further includes an electrophoresis chamber, with a capillary connection to the separation station, a reaction chamber, and at least one pair of electrodes. The electrodes are arranged upstream and downstream of the electrophoresis chamber, whose electrical field propels the sample from the electrophoresis chamber to the reaction chamber, a separative electrophoresis occurring inside the electrophoresis chamber. The insertion station, the stabilization chamber, the separation station, the electrophoresis chamber (5) and the reaction chamber are defined in a single chip and include inert containment surfaces.

Abstract: A diagnostic device, particularly of the lab-on-chip type having a station for inserting a native sample of a fluid to be tested; a chamber for stabilizing the native sample, and a station for separating the native sample. The device further includes an electrophoresis chamber, with a capillary connection to the separation station, a reaction chamber, and at least one pair of electrodes. The electrodes which are arranged upstream and downstream of the electrophoresis chamber, whose electrical field propels the sample from the electrophoresis chamber to the reaction chamber, a separative electrophoresis occurring inside the electrophoresis chamber. The insertion station, the stabilization chamber, the separation station, the electrophoresis chamber and the reaction chamber are defined in a single chip and include inert containment surfaces.

Abstract: Process for forming salicide on active areas of MOS transistors, each MOS transistor comprising a gate and respective source and drain regions, the source and drain regions each comprising a first lightly doped sub-region adjacent the gate and a second highly doped sub-region spaced apart from the gate. The salicide is formed selectively at least over the second highly doped sub-regions of the source and drain regions of the MOS transistors, and not over the first lightly doped sub-region.

Abstract: Process for forming salicide on active areas of MOS transistors, each MOS transistor comprising a gate and respective source and drain regions, the source and drain regions each comprising a first lightly doped sub-region adjacent the gate and a second highly doped sub-region spaced apart from the gate. The salicide is formed selectively at least over the second highly doped sub-regions of the source and drain regions of the MOS transistors, and not over the first lightly doped sub-region.

Abstract: Process for forming salicide on active areas of MOS transistors, each MOS transistor comprising a gate and respective source and drain regions, the source and drain regions each comprising a first lightly doped sub-region adjacent the gate and a second highly doped sub-region spaced apart from the gate. The salicide is formed selectively at least over the second highly doped sub-regions of the source and drain regions of the MOS transistors, and not over the first lightly doped sub-region.

Abstract: A process for the manufacturing of integrated circuits provides for forming contacts between a conductive material layer and first doped regions of a semiconductor substrate in a self-aligned manner to edges of an insulating material layer which defines active areas of the integrated circuit wherein the doped regions are formed, and second doped regions of the same conductivity type as the first doped regions under the first doped regions, the second doped regions extending partially under the edges of the insulating material layer to prevent short-circuits between the conductive material layer and the semiconductor substrate. The second doped regions are formed by means of implantation of dopants along directions slanted with respect to an orthogonal direction to a surface of the semiconductor substrate at angles and with an energy sufficiently high to make the dopants penetrate in the semiconductor material deeper than the first doped regions and under the edges of the insulating material layer.