Patents by Inventor Max SK Chen

Max SK Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Gallium nitride power semiconductor device having a vertical structure
    Patent number: 9368584
    Abstract: A semiconductor device includes a substrate having first and second sides and a first active layer disposed over the first side of the substrate. A second active layer is disposed on the first active layer. The second active layer has a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer. At least one trench extends through the first and second active layers and the two-dimensional electron gas layer and into the substrate. A conductive material lines the trench. A first electrode is disposed on the second active layer and a second electrode is disposed on the second side of the substrate.
    Type: Grant
    Filed: July 9, 2013
    Date of Patent: June 14, 2016
    Inventors: Max Sk Chen, Yih-Yin Nmi Lin
  • GALLIUM NITRIDE POWER SEMICONDUCTOR DEVICE HAVING A VERTICAL STRUCTURE
    Publication number: 20150014696
    Abstract: A semiconductor device includes a substrate having first and second sides and a first active layer disposed over the first side of the substrate. A second active layer is disposed on the first active layer. The second active layer has a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer. At least one trench extends through the first and second active layers and the two-dimensional electron gas layer and into the substrate. A conductive material lines the trench. A first electrode is disposed on the second active layer and a second electrode is disposed on the second side of the substrate.
    Type: Application
    Filed: July 9, 2013
    Publication date: January 15, 2015
    Inventors: Max SK Chen, Yih-Yin Lin