Patents by Inventor Max Zolotorev

Max Zolotorev has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7755069
    Abstract: A high-brightness pulsed electron source, which has the potential for many useful applications in electron microscopy, inverse photo-emission, low energy electron scattering experiments, and electron holography has been described. The source makes use of Cs atoms in an atomic beam. The source is cycled beginning with a laser pulse that excites a single Cs atom on average to a band of high-lying Rydberg nP states. The resulting valence electron Rydberg wave packet evolves in a nearly classical Kepler orbit. When the electron reaches apogee, an electric field pulse is applied that ionizes the atom and accelerates the electron away from its parent ion. The collection of electron wave packets thus generated in a series of cycles can occupy a phase volume near the quantum limit and it can possess very high brightness. Each wave packet can exhibit a considerable degree of coherence.
    Type: Grant
    Filed: May 16, 2007
    Date of Patent: July 13, 2010
    Assignee: The Regents of the University of California
    Inventor: Max Zolotorev
  • Publication number: 20080173829
    Abstract: A high-brightness pulsed electron source, which has the potential for many useful applications in electron microscopy, inverse photo-emission, low energy electron scattering experiments, and electron holography has been described. The source makes use of Cs atoms in an atomic beam. The source is cycled beginning with a laser pulse that excites a single Cs atom on average to a band of high-lying Rydberg nP states. The resulting valence electron Rydberg wave packet evolves in a nearly classical Kepler orbit. When the electron reaches apogee, an electric field pulse is applied that ionizes the atom and accelerates the electron away from its parent ion. The collection of electron wave packets thus generated in a series of cycles can occupy a phase volume near the quantum limit and it can possess very high brightness. Each wave packet can exhibit a considerable degree of coherence.
    Type: Application
    Filed: May 16, 2007
    Publication date: July 24, 2008
    Inventor: Max Zolotorev
  • Patent number: 6285690
    Abstract: An ignition feedback regenerative amplifier consists of an injector, a linear accelerator with energy recovery, and a high-gain free electron laser amplifier. A fraction of the free electron laser output is coupled to the input to operate the free electron laser in the regenerative mode. A mode filter in this loop prevents run away instability. Another fraction of the output, after suitable frequency up conversion, is used to drive the photocathode. An external laser is provided to start up both the amplifier and the injector, thus igniting the system.
    Type: Grant
    Filed: July 27, 1999
    Date of Patent: September 4, 2001
    Assignee: Bennett Optical Research, Inc.
    Inventors: Kwang-Je Kim, Alexander Zholents, Max Zolotorev
  • Patent number: 5796314
    Abstract: A high-power RF switching device employs a semiconductor wafer positioned in the third port of a three-port RF device. A controllable source of directed energy, such as a suitable laser or electron beam, is aimed at the semiconductor material. When the source is turned on, the energy incident on the wafer induces an electron-hole plasma layer on the wafer, changing the wafer's dielectric constant, turning the third port into a termination for incident RF signals, and. causing all incident RF signals to be reflected from the surface of the wafer. The propagation constant of RF signals through port 3, therefore, can be changed by controlling the beam. By making the RF coupling to the third port as small as necessary, one can reduce the peak electric field on the unexcited silicon surface for any level of input power from port 1, thereby reducing risk of damaging the wafer by RF with high peak power.
    Type: Grant
    Filed: May 1, 1997
    Date of Patent: August 18, 1998
    Assignee: Stanford University
    Inventors: Sami G. Tantawi, Ronald D. Ruth, Max Zolotorev